Method of cutting conductive patterns

Patent metadata

Field	Value
Publication number	US-9380709-B2
Application number	US-201313924681-A
Country	US
Kind code	B2
Filing date	Jun 24, 2013
Priority date	Mar 15, 2013
Publication date	Jun 28, 2016
Grant date	Jun 28, 2016

Abstract

A method includes patterning a layer over a substrate with a first metal pattern; using a cut mask in a first position relative to the substrate to perform a first cut patterning for removing material from a first region within the first pattern; and using the same cut mask to perform a second cut patterning while in a second position relative to the same layer over the substrate, for removing material from a second region in a second metal pattern of the same layer over the substrate.

First claim

What is claimed is:

1. A method comprising
(a) patterning a layer over a substrate using a first photomask, to create a first metal line pattern;
(b) using a cut mask in a first position relative to the substrate to perform a first cut patterning for removing material from a first region within the first metal line pattern; and
(c) patterning the layer over the substrate with a second photomask in a double patterning process to form a second metal line pattern having a second region;
(d) after step (c), using the cut mask to perform a second cut patterning while in a second position relative to the layer over the substrate, for removing material from the second region.

2. The method of claim 1 , wherein step (b) divides the first metal pattern into a second metal pattern and a third metal pattern, the second and third metal patterns being unconnected to each other.

3. The method of claim 2 , wherein a distance between the second and third metal patterns is smaller than a single-patterning minimum separation distance.

4. The method of claim 1 , wherein step (a) is performed using a first pattern mask, the method further comprising:
shifting a position of one of the substrate and the first pattern mask relative to the other of the substrate and the first pattern mask after step (a); and
patterning the same layer over the substrate with the second metal pattern using the first pattern mask before step (c).

5. The method of claim 1 , wherein the cut mask has a plurality of cut patterns, step (a) performs cut patterning for removing material from a plurality of first regions in a first plurality of metal patterns, and step (c) includes using the same cut mask to perform a second cut patterning for removing material from a plurality of second regions in the first plurality of metal patterns while in the second position relative to the same layer over the substrate.

6. The method of claim 5 , wherein a smallest spacing between one of the first regions and one of the second regions is smaller than a spacing between ones of the plurality of cut patterns in the cut mask.

7. The method of claim 1 , wherein:
the first metal line pattern has a plurality of first patterns; and
the cut mask has a plurality of cut patterns, each respective cut pattern to be used during the first cut patterning for removing material from a respective first region of a respective one of the first metal patterns, to divide the respective first metal pattern into a respective third metal pattern and a respective fourth metal pattern.

8. The method of claim 1 , wherein
at least one of the first cut pattern or the second cut pattern is positioned so as to perform a dummy cut during the second cut patterning.

9. The method of claim 1 , wherein:
the cut mask has plural pairs of cut regions, each pair having a respective first cut region in a respective first metal line pattern and a respective second cut region in a respective second metal line pattern, wherein each second cut has a common translation with respect to its corresponding first cut.

10. The method of claim 9 , further comprising
providing a respective first cut region in the cut mask, corresponding to a further first metal pattern, for which there is no corresponding second metal pattern at a location separated from the first cut region by the common translation.

11. A method comprising
(a) patterning a layer over a substrate to create a first metal line pattern:
(b) using a cut mask having a first cut pattern and a second cut pattern in a first position relative to the substrate to perform a first cut patterning for removing material from a first region within the first metal line pattern, wherein:
step (b) further comprises removing the material from the first region of the layer over the substrate using the first cut pattern, and removing the material from an additional metal line region of the layer over the substrate using the second cut pattern; and

(c) using the cut mask to perform a second cut patterning while in a second position relative to the layer over the substrate, including using the first cut pattern to remove metal material from a second region of the layer over the substrate, wherein step (c) does not use the second cut pattern to remove metal material from the layer over the substrate.

12. The method of claim 11 , wherein step (b) divides the first metal line pattern into a second metal line pattern and a third metal line pattern, the second and third metal line patterns being unconnected to each other.

13. The method of claim 12 , wherein a distance between the second and third metal line patterns is smaller than a single-patterning minimum separation distance.

14. The method of claim 11 , wherein:
the cut mask has plural pairs of cut regions, each pair having a respective first cut region in a respective first metal line pattern and a respective second cut region in a respective second metal line pattern, wherein each second cut has a common translation with respect to its corresponding first cut.

15. A method comprising
(a) patterning a layer over a substrate with a first metal pattern;
(b) using a cut mask in a first position relative to the substrate to perform a first cut patterning for removing material from a first region within the first pattern;
(c) using the cut mask to perform a second cut patterning while in a second position relative to the layer over the substrate, for removing material from a second region of the layer over the substrate; and
(d) shifting a position of one of the substrate and the cut mask relative to the other of the substrate and the cut mask between step (b) and step (c), wherein the shifting includes shifting the cut mask in a vertical direction and a horizontal direction relative to the first position.

16. The method of claim 15 , wherein step (b) divides the first metal pattern into a second metal pattern and a third metal pattern, the second and third metal line patterns being unconnected to each other.

17. The method of claim 16 , wherein a distance between the second and third metal patterns is smaller than a single-patterning minimum separation distance.

18. The method of claim 15 , wherein:
the cut mask has plural pairs of cut regions, each pair having a respective first cut region in a respective first metal pattern and a respective second cut region in a respective second metal pattern, wherein each second cut has a common translation with respect to its corresponding first cut.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Hsu Chin-Hsiung
• Chen Huang-Yu
• Ou Tsong-Hua
• Chen Wen-Hao

Classifications

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• G06F30/39

  Circuit design at the physical level (physical level design for reconfigurable circuits G06F30/347) · CPC title

• Y10T29/49156

  with selective destruction of conductive paths · CPC title

• G03F7/2022 Primary

  Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure · CPC title

• H05K2203/1476

  Same or similar kind of process performed in phases, e.g. coarse patterning followed by fine patterning · CPC title