Optical interconnection module and optical-electrical hybrid board

Patent metadata

Field	Value
Publication number	US-9379276-B2
Application number	US-201514588432-A
Country	US
Kind code	B2
Filing date	Jan 1, 2015
Priority date	Mar 29, 2011
Publication date	Jun 28, 2016
Grant date	Jun 28, 2016

Abstract

There are provided an optical interconnection module and an optical-electrical hybrid board using the same to process optical and electric signals on a board at a low transmission loss at high speed in transmitting high-speed optical signals sent and received between chips or between boards in a data processing apparatus. An optical interconnection module has a structure in which an optical signal is emitted from a laser optical source device, propagates the inside of a modulator device, and is deflected by a beam turning structure in the vertical direction of a substrate, an optical signal is incident from the outside of a semiconductor substrate, and transmitted and received at a photo diode provided on the semiconductor substrate, and the optical signals are optically connected to each other through the inside of the semiconductor substrate in the vertical direction of the substrate with the outside of the semiconductor substrate.

First claim

What is claimed is:

1. A method of manufacturing an optical interconnection module, comprising the steps (1) to (8):
(1) providing a silicon semiconductor substrate having a front surface, the silicon semiconductor substrate including a silicon semiconductor layer and a silicon oxide layer, the silicon oxide layer being formed between the silicon semiconductor layer and the front surface of the silicon semiconductor substrate;
(2) depositing a modulator material layer on the front surface of the silicon semiconductor substrate;
(3) using silicon wafer processing, patterning the modulator material layer to form a silicon waveguide modulator device portion at the front surface of the silicon semiconductor substrate, wherein an optical output from a laser-diode device is optically connected to an optical input terminal of the modulator device portion;
(4) forming a photodiode on the substrate and a driver IC on the front surface of the silicon semiconductor substrate to be juxtaposed between the modulator device portion and the photodiode;
(5) forming, using the silicon wafer processing, a tapered part on one end of the modulator device portion so as to provide a beam turning portion on the modulator device portion;
(6) forming a bias power supply line for driving the optical source device on the front surface of the silicon semiconductor substrate; and
(7) forming high-frequency electric lines on the silicon semiconductor substrate connecting the photodiode and the modulator device portion with the driver IC, respectively,
wherein the modulator device portion is monolithically formed and integrated onto the front surface of the silicon semiconductor substrate.

2. The method of manufacturing an optical interconnection module according to claim 1 ,
wherein the driver IC includes a driver circuit which drives the modulator device portion and a trans impedance amplifier which amplifies an electric signal outputted from the photodiode, and
wherein the driver IC is arranged between the modulator device portion and the photodiode so as to face each of them on the silicon semiconductor substrate.

3. The method of manufacturing an optical interconnection module according to claim 1 ,
wherein the bias power supply line is extended in a first direction and one of the high-frequency electric lines connected to the modulator device portion is extended in a second direction opposite to the first direction.

4. The method of manufacturing an optical interconnection module according to claim 1 ,
wherein the modulator device portion is composed of any material of silicon film, silicon oxide film, and silicon nitride film.

5. The method of manufacturing an optical interconnection module according to claim 1 ,
wherein the beam turning portion provides a structure such that light propagating in a direction parallel to a main surface of the silicon semiconductor substrate is bent in a direction substantially perpendicular to the main surface of the silicon semiconductor substrate.

6. The method of manufacturing an optical interconnection module according to claim 5 ,
wherein the beam turning portion has an angle in a range of 35 to 55 degrees.

7. The method of manufacturing an optical interconnection module according to claim 1 ,
wherein each of the driver IC and the photodiode comprises a diffusion layer formed in the silicon semiconductor substrate.

8. The method of manufacturing an optical interconnection module according to claim 1 ,
wherein each of the driver IC and the photodiode is formed by a process including patterning a film deposited on the silicon semiconductor substrate.

9. The method of manufacturing an optical interconnection module according to claim 1 ,
wherein the photodiode is formed using epitaxial growth of germanium material.

10. The method of manufacturing an optical interconnection module according to claim 1 ,
wherein the photodiode and the driver IC are monolithically formed and integrated onto the front surface of the silicon semiconductor substrate.

11. The method of manufacturing an optical interconnection module according to claim 1 ,
wherein the silicon semiconductor substrate is an SOI substrate.

Assignees

• Hitachi Ltd

Inventors

• Matsuoka Yasunobu
• Sugawara Toshiki
• Ido Tatemi

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/00

  Package configurations · CPC title

• H10F77/407

  indirectly associated with the devices · CPC title

• H10F55/25

  wherein the radiation-sensitive devices and the electric light source are all semiconductor devices · CPC title

• H10F71/1212 Primary

  consisting of germanium · CPC title