Magneto-electric voltage controlled spin transistors

Patent metadata

Field	Value
Publication number	US-9379232-B2
Application number	US-201414182521-A
Country	US
Kind code	B2
Filing date	Feb 18, 2014
Priority date	Feb 18, 2013
Publication date	Jun 28, 2016
Grant date	Jun 28, 2016

Abstract

The invention relates to a magneto-electric spin-FET including a gate film of chromia and a thin film of a conductive channel material which may be graphene, InP, GaAs, GaSb, PbS, MoS 2 , WS 2 , MoSe 2 , WSe 2 and mixtures thereof. The chromia, or other magneto-electric, and conduction channel material are in intimate contact along an interface there between. The resulting magneto-electric device may be voltage-controlled and provide non-volatile memory.

First claim

What is claimed as new and inventive is:

1. A magneto-electric spin field effect transistor (spin-FET) comprising:
a layer of a magneto-electric gate dielectric,
a thin film of a conductive channel material selected from the group consisting of graphene, InP, GaSb, PbS, MoS 2 , WS 2 , MoSe 2 , WSe 2 and mixtures thereof;
wherein said magneto-electric gate film and said channel material are in intimate contact along an interface there between,
a source and drain disposed in electrical contact with said thin film of channel material.

2. The spin-FET of claim 1 , wherein said film of a magneto-electric dielectric is comprised of chromia, Fe 2 TeO 6 or LuFeO 3 .

3. The spin-FET of claim 2 , wherein said layer of magneto-electric dielectric is comprised of chromia.

4. The spin-FET of claim 1 , where no refresh current is required to retain the last state written.

5. The spin-FET of claim 4 which is a transistor which is susceptible to separated read and write operations.

6. The spin-FET of claim 4 that combines memory and logic operations.

7. The spin-FET of claim 1 with multistate logic.

8. The spin-FET of claim 7 , wherein both spin and current of said spin-FET is voltage controlled.

Assignees

• Univ North Texas
• Quantum Devices Llc

Inventors

• Kelber Jeffry A
• Binek Christian
• Bowden Peter Arnold
• Belashchenko Kirill

Classifications

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• H01F10/002

  Antiferromagnetic thin films, i.e. films exhibiting a Néel transition temperature (H01F10/3218 and H01F10/3268 take precedence) · CPC title

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01F10/3268

  the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn · CPC title

• G11C11/5607

  using magnetic storage elements · CPC title