Wire bonding structure of semiconductor device and wire bonding method

Patent metadata

Field	Value
Publication number	US-9379085-B2
Application number	US-201113018993-A
Country	US
Kind code	B2
Filing date	Feb 1, 2011
Priority date	Mar 31, 2010
Publication date	Jun 28, 2016
Grant date	Jun 28, 2016

Abstract

A wire bonding structure is provided which includes a wire having a first bonding portion and a second bonding portion. The first bonding portion is bonded to an electrode pad of a semiconductor element, whereas the second bonding portion is bonded to a pad portion of a lead. The first bonding portion includes a front bond portion, a rear bond portion, and an intermediate portion sandwiched between these two bond portions. The front bond portion and the rear bond portion are bonded to the electrode pad more strongly than the intermediate portion is. In the longitudinal direction of the wire, the second bonding portion is smaller than the first bonding portion in bonding length.

First claim

The invention claimed is:

1. A wire bonding structure comprising a wire that comprises:
a first bonding portion bonded to a first bonding target; and
a second bonding portion bonded to a second bonding target;
wherein the first bonding portion includes a front bond portion, a rear bond portion, and an intermediate portion between the front bond portion and the rear bond portion, the front bond portion being closer to the second bonding portion than the rear bond portion is, each of the front bond portion and the rear bond portion having a bonding surface and an upper outline opposite to the bonding surface, the bonding surface being bonded to the first bonding target more strongly than the intermediate portion is,
wherein the second bonding portion is smaller in bonding length in a longitudinal direction of the wire than the first bonding portion, wherein the first bonding portion is provided at an end of the wire,
wherein the intermediate portion has an under outline facing the first bonding target and extending from the rear bond portion to the front bond portion, and the entirety of the under outline of the intermediate portion is closer to the first bonding target than is the upper outline of each of the front bond portion and the rear bond portion, and
wherein the intermediate portion is smaller in width than each of the front bond portion and the rear bond portion as viewed in a normal direction of the first bonding target.

2. The wire bonding structure according to claim 1 , wherein the intermediate portion is spaced apart from the first bonding target.

3. The wire bonding structure according to claim 2 , wherein the intermediate portion has a circular cross section, and a spacing distance between the intermediate portion and the first bonding target is smaller than a diameter of the circular cross section.

4. The wire bonding structure according to claim 1 , wherein the intermediate portion is in direct contact with the first bonding target.

5. The wire bonding structure according to claim 1 , wherein the second bonding portion is equal in bonding length in the longitudinal direction of the wire to the rear bond portion of the first bonding portion.

6. The wire bonding structure according to claim 5 , wherein the second bonding portion has a bonding length that is ⅓ of a length of the first bonding portion in the longitudinal direction of the wire.

7. The wire bonding structure according to claim 1 , wherein the wire is made of aluminum.

8. A semiconductor device comprising:
a wire bonding structure as set forth in claim 1 ;
a semiconductor element including an electrode pad as the first bonding target;
a lead including a pad portion as the second bonding target; and
a resin package covering the semiconductor element and the wire bonding structure.

9. The wire bonding structure according to claim 1 , wherein the first bonding target is a single electrode pad to which both the front bond portion and the rear bond portion are bonded.

10. The wire bonding structure according to claim 1 , wherein the intermediate portion is equal in length to at least one of the front bond portion and the rear bond portion in the longitudinal direction of the wire.

11. The wire bonding structure according to claim 1 , wherein each of the front bond portion and the rear bond portion is welded to the first bonding target.

12. The wire bonding structure according to claim 1 , wherein a longitudinal direction of the front bond portion coincides with a longitudinal direction of the rear bond portion.

13. The wire bonding structure according to claim 1 , further comprising a bridge portion connecting the first bonding portion and the second bonding portion to each other, wherein the bridge portion is greater in length than the intermediate portion.

14. The wire bonding structure according to claim 13 , wherein the bridge portion is greater in length than the first bonding portion.

15. A wire bonding structure comprising a wire that comprises:
a first bonding portion bonded to a first bonding target; and
a second bonding portion bonded to a second bonding target;
wherein the first bonding portion includes a front bond portion, a rear bond portion, and an intermediate portion between the front bond portion and the rear bond portion, the front bond portion being closer to the second bonding portion than the rear bond portion is, each of the front bond portion and the rear bond portion having a bonding surface and an upper outline opposite to the bonding surface, the bonding surface being bonded to the first bonding target more strongly than the intermediate portion is,
wherein the second bonding portion is smaller in bonding length in a longitudinal direction of the wire than the first bonding portion,
wherein the first bonding portion is provided at an end of the wire,
wherein the intermediate portion has an under outline facing the first bonding target and extending from the rear bond portion to the front bond portion, and the entirety of the under outline of the intermediate portion is closer to the first bonding target than is the upper outline of each of the front bond portion and the rear bond portion, and
wherein each of the front bond portion and the rear bond portion includes a thick part and a pair of thin parts that flank the thick part and are smaller in thickness than the thick part.

16. The wire bonding structure according to claim 15 , wherein each of the thin parts of the front bond portion and the rear bond portion has a flat face that is spaced apart from and parallel to the first bonding target.

17. The wire bonding structure according to claim 16 , wherein the flat faces of each of the thin parts of the front bond portion are flush with the flat faces of each of the thin parts of the rear bond portion.

18. A method of forming a wire bonding structure including a first bonding portion and a second bonding portion, the method comprising:
forming the first bonding portion on a first bonding target; and
forming the second bonding portion on a second bonding target spaced apart from the first bonding target;
wherein the first bonding portion includes a front bond portion, a rear bond portion and an intermediate portion disposed between the front bond portion and the rear bond portion, the front bond portion and the rear bond portion being spaced apart from each other and both bonded to the first bonding target,
wherein the front bond portion and the second bond portion are simultaneously welded to the first bonding target, while the intermediate portion is unbonded to the first bonding target, and
wherein the intermediate portion is smaller in width than each of the front bond portion and the rear bond portion as viewed in a normal direction of the first bonding target.

19. The method according to claim 18 , wherein the intermediate portion is equal in length to at least one of the front bond portion and the rear bond portion.

Assignees

• Tsubaki ryuji
• Matsuoka Yasufumi
• Rohm Co Ltd

Inventors

• Tsubaki ryuji
• Matsuoka Yasufumi

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/114

  by a substrate and the encapsulations · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/07533

  Ultrasonic bonding, e.g. thermosonic bonding · CPC title

• H10W72/07521

  Aligning · CPC title