Plasma etching process

Patent metadata

Field	Value
Publication number	US-9378970-B2
Application number	US-201514610490-A
Country	US
Kind code	B2
Filing date	Jan 30, 2015
Priority date	Jan 31, 2014
Publication date	Jun 28, 2016
Grant date	Jun 28, 2016

Abstract

A method and system are provided for etching a layer to be etched in a plasma etching reactor, including: forming a reactive layer by injection of at least one reactive gas to form a reactive gas plasma, which forms, together with the layer to be etched, a reactive layer which goes into the layer to be etched during etching of said layer to be etched, wherein the reactive layer reaches a steady state thickness upon completion of a determined duration of said injection; said injection being interrupted before said determined duration has elapsed so that, upon completion of the forming of the reactive layer, the thickness of the reactive layer is smaller than said steady state thickness; and removing the reactive layer by injection of at least one inert gas to form an inert gas plasma, which makes it possible to remove only the reactive layer.

First claim

The invention claimed is:

1. A method for etching in a plasma etching reactor, comprising:
performing at least one first phase, comprising:
injecting at least one reactive gas into the plasma etching reactor for a duration D0 to form a reactive gas plasma,
forming a reactive layer into a material from the reactive gas plasma and the material,
the duration D0 being longer than a predetermined duration Ds for which the formed reactive layer reaches a steady state thickness, and
removing the formed reactive layer by etching; and

performing at least one second phase, comprising:
injecting the at least one reactive gas into the plasma etching reactor for a duration D1 to form the reactive gas plasma,
forming another reactive layer into the material from the reactive gas plasma and the material,
the duration D1 being shorter than the predetermined duration Ds such that the formed another reactive layer has a thickness that is less than the steady state thickness, and
removing the formed another reactive layer after completion of the duration D1 by injecting at least one inert gas into the plasma etching reactor to form an inert gas plasma, and without removing the material below the thickness of the formed another reactive layer.

2. The method according to claim 1 , further comprising performing a plurality of iterations of the at least one second phase.

3. The method according to claim 2 , wherein the at least one reactive gas injected during an iteration of the second phase is different from the at least one reactive gas injected during another iteration of the second phase.

4. The method according to claim 2 , wherein the at least one inert gas injected during an iteration of the second phase is different from the at least one inert gas injected during another iteration of the second phase.

5. The method according to claim 1 ,
wherein the material is disposed on top of an underlying layer, and
wherein the at least one first phase is interrupted and the at least one second phase is started when the formed reactive layer has a thickness greater than the steady state thickness.

6. The method according to claim 5 , wherein the at least one first phase is interrupted and the at least one second phase is started when the thickness greater than the steady state thickness is smaller than k times the steady state thickness, where k is a number ranging from 2 to 8.

7. The method according to claim 6 , wherein k ranges from 3 to 6.

8. The method according to claim 7 , wherein k=4.

9. The method according to claim 1 , wherein the duration D1 ranges from 50 ms to 500 ms.

10. The method according to claim 1 , wherein the injecting for the duration D1 is interrupted when the formed another reactive layer has a thickness smaller than 2 nm.

11. The method according to claim 1 , wherein the injecting for the duration D1 is interrupted when the formed another reactive layer has a thickness smaller than 1 nm.

12. The method according to claim 1 ,
wherein the material is disposed on top of a barrier layer, and
the injecting for the duration D1 is interrupted before the formed another reactive layer has a thickness greater than a thickness of the barrier layer.

13. The method according to claim 1 , wherein a duration of the injecting of the inert gas ranges from 50 ms to 500 ms.

14. The method according to claim 1 , wherein a duration of the injecting of the inert gas ranges from 100 ms to 500 ms.

15. The method according to claim 1 , further comprising, during the forming of the another reactive layer, adjusting at least one of the following parameters to control the forming of the another reactive layer: the duration D1 of the injecting of the at least one reactive gas, and an energy transmitted to ions in the reactive gas plasma.

16. The method according to claim 1 , further comprising, during the at least one second phase, transmitting energy to ions in the reactive gas plasma at less than 50 eV, wherein a density of the reactive gas plasma ranges from 10 10 ions/cm 3 to 5>10 10 ions/cm 3 .

17. The method according to claim 1 , further comprising, during the at least one second phase, transmitting energy to ions in the reactive gas plasma at less than 25 eV, wherein a density of the reactive gas plasma ranges from 10 10 ions/cm 3 to 10 11 ions/cm 3 .

18. The method according to claim 1 , further comprising, during the removing the formed another reactive layer, adjusting at least one of the following parameters to control the removing of the formed another reactive layer without removing the material below the thickness of the formed another reactive layer: a duration of the injecting of the inert gas, a density of the inert gas plasma, and an energy transmitted to ions of the inert gas plasma.

19. The method according to claim 1 , further comprising, during the at least one second phase, transmitting energy to ions of the inert gas plasma at less than 50 eV.

20. The method according to claim 1 , further comprising, during the at least one second phase, transmitting energy to ions of the inert gas plasma at less than 25 eV.

21. The method according to claim 1 , wherein during the at least one second phase, the inert gas plasma is a pulsed plasma and an energy transmitted to ions of the inert gas plasma is less than 50 eV.

22. The method according to claim 1 , wherein during the at least one second phase, the inert gas plasma is a pulsed plasma and an energy transmitted to ions of the inert gas plasma is less than 25 eV.

23. The method according to claim 1 , further comprising electrically polarizing the material or a substrate supporting the material.

24. The method according to claim 1 , further comprising, during the forming of the another reactive layer, injecting the at least one inert gas in addition to the injecting of the at least one reactive gas.

25. The method according to claim 1 , wherein the at least one reactive gas is selected from among a first group of Cl 2 , HBr, SF 6 , NF 3 , SiCl 4 , BCl 3 , H 2 , SiF 4 , O 2 , HCl, HI, CH 2 F 2 , CHF 3 , and Ar, or is selected from among a second group of CF 4 , CHF 3 , CH 3 F, C 4 F 8 , CH 2 F 2 , C 5 F 6 , Ar, O 2 , and He, or is selected from a mixture of gases from the first group and the second group.

26. The method according to claim 1 , wherein the at least one inert gas is a rare gas or a mixture of rare gases.

27. The method according to claim 1 , wherein the at least one inert gas is Ar, Xe, or a mixture of Ar and Xe.

28. The method according to claim 1 , wherein during the removing the formed another reactive layer, the injecting the at least one inert gas into the plasma etching reactor is executed continuously and simultaneously with a plurality of injections of the at least one reactive gas.

29. The method according to claim 1 , wherein the material is a semiconductor material selected from among: silicon, germanium, silicon-germanium, a III-V material, a metal, or a porous dielectric material.

30. The method according to claim 1 , wherein the material is a layer of a MOSFET transistor.

31. A system for implementing a method for etching according to claim 1 , the system comprising:
at least one plasma etching reactor; and
at least one injector configured to inject at least two gases into the at least one plasma etching reactor f

Assignees

• Commissariat Energie Atomique
• Centre Nat Rech Scient
• Commissariat Energie Atomique

Inventors

• Joubert Olivier
• Cunge Gilles
• Despiau-Pujo Emilie
• Pargon Erwine
• Posseme Nicolas

Classifications

• H10P72/0421

  for drying etching · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/242 Primary

  of Group IV materials · CPC title

• H01L21/3065 Primary

  Electricity · mapped topic

• H01L21/31116

  Electricity · mapped topic