Method for etching organic film

Patent metadata

Field	Value
Publication number	US-9376748-B2
Application number	US-201514625048-A
Country	US
Kind code	B2
Filing date	Feb 18, 2015
Priority date	Feb 19, 2014
Publication date	Jun 28, 2016
Grant date	Jun 28, 2016

Abstract

A method for etching an organic film 1 having a surface selectively protected by a hard mask layer 2 , includes a partial etching process of etching the organic film 1 partly in a thickness direction of the organic film 1 by using a mixed gas containing a gas that anisotropically etches a silicon oxide film and a gas that isotropically etches the organic film without etching the silicon oxide film; and a deposition process of depositing a protective film 3 made of the silicon oxide film on side surfaces 12 and a bottom surface 11 of a recess 10 formed in the organic film in the partial etching process. The partial etching process and the deposition process is alternately performed multiple times.

First claim

What is claimed is:

1. A method for etching an organic film having a surface selectively protected by a hard mask layer, the method comprising:
a) partially etching the organic film in a thickness direction thereof with a mixed gas comprising a gas that anisotropically etches a silicon oxide film and a gas that isotropically etches the organic film without etching the silicon oxide film to form a partially etched organic film; and
b) depositing a protective film made of the silicon oxide film on side surfaces and a bottom surface of a recess formed in a) in the partially etched organic film,
wherein a) and b) are each performed multiple times.

2. The method according to claim 1 ,
wherein the mixed gas comprises O 2 gas and Ar gas, and Ar + and oxygen radicals are generated from the mixed gas in the partial etching, and
wherein the Ar + anisotropically etches the silicon oxide film, and the oxygen radicals isotropically etch the organic film.

3. The method according to claim 1 ,
wherein the organic film is a plating resist for forming a wiring layer having a height difference in the thickness direction of the organic film.

4. The method according to claim 3 ,
wherein the wiring layer forms a coil that winds around a magneto-sensitive body provided on a substrate in an MI sensor, and
wherein the organic film is a plating resist for forming the coil.

5. The method according to claim 2 ,
wherein the organic film is a plating resist for forming a wiring layer having a height difference in the thickness direction of the organic film.

6. The method according to claim 5 ,
wherein the wiring layer forms a coil that winds around a magneto-sensitive body provided on a substrate in an MI sensor, and
wherein the organic film is a plating resist for forming the coil.

Assignees

• Aichi Steel Corp

Inventors

• Yamamoto Michiharu
• Tatematsu Shunichi
• Yamashita Ryusuke
• Hamada Norihiko
• Gemba Koei

Classifications

• H10P50/287 Primary

  by chemical means · CPC title

• C23C16/401

  containing silicon · CPC title

• C23C16/44

  characterised by the method of coating (C23C16/04 takes precedence) · CPC title

• H01F41/04

  for manufacturing coils {(coils for transformer or inductances H01F27/28)} · CPC title

• C23C16/045 Primary

  Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates · CPC title