Polishing composition

Patent metadata

Field	Value
Publication number	US-9376594-B2
Application number	US-201314385298-A
Country	US
Kind code	B2
Filing date	Mar 11, 2013
Priority date	Mar 16, 2012
Publication date	Jun 28, 2016
Grant date	Jun 28, 2016

Abstract

There is provided a polishing composition capable of suppressing formation of a stepped portion caused by etching of a surface of a polishing object including a portion containing a group IV material when the polishing object is polished. The present invention relates to a polishing composition for polishing of a polishing object including a portion that contains a group IV material, and the polishing composition contains an oxidizing agent and an anticorrosive agent. Preferably, the anticorrosive agent includes at least one selected from the group consisting of compounds in which two or more carbonyl groups contained in a molecule are bonded through a carbon atom in the molecule. To be more specific, preferably, the anticorrosive agent includes at least one selected from the group consisting of a 1,3-diketone compound, a 1,4-diketone compound, and a triketone compound.

First claim

The invention claimed is:

1. A polishing method comprising,
polishing a polishing object including a portion comprising germanium (Ge) with a polishing composition,
wherein the polishing composition comprises an oxidizing agent and an anticorrosive agent, and
wherein the anticorrosive agent comprises at least one selected from the group consisting of compounds in which two or more carbonyl groups contained in a molecule are bonded through a carbon atom in the molecule.

2. The method according to claim 1 , wherein the compound is represented by the following Formula (4):

(wherein, in Formula (4), R 13 and R 14 , independently, represent a linear or branched alkylene group having 1 to 4 carbon atoms,
R 15 , R 16 , R 17 , and R 18 , independently, represent a hydrogen atom, a halogen atom, a linear, branched, or cyclic alkyl group having 1 to 10 carbon atoms with or without a substituent, a hydroxymethyl group, a hydroxyethyl group, or an aryl group having 6 to 20 carbon atoms with or without a substituent, and
X 1 and X 2 , independently, represent a hydrogen atom, a halogen atom, an alkyl group having 6 to 20 carbon atoms with or without a substituent, a hydroxymethyl group, a hydroxyethyl group, or an aryl group having 6 to 20 carbon atoms with or without a substituent, a functional group (1) below, or a functional group (2) below, wherein, one or more sets from X 1 and R 15 , R 15 and R 16 , R 16 and R 17 , R 17 and R 18 , and R 18 and X 2 may be bonded directly or through a carbon atom so as to form a cyclic structure),

(wherein, R 4 and R 5 of the functional group (1) and R 6 of the functional group (2), independently, represent a hydrogen atom, a halogen atom, a linear, branched, or cyclic alkyl group having 1 to 10 carbon atoms with or without a substituent, a hydroxymethyl group, a hydroxyethyl group, or an aryl group having 6 to 20 carbon atoms with or without a substituent).

3. The method according to claim 1 , wherein a pH is 5 or more to 12 or less.

4. A manufacturing method of a substrate including a portion comprising germanium, the manufacturing method comprising a polishing process by the polishing method described in claim 1 .

5. The method according to claim 1 , wherein the polishing object includes a portion comprising SiGe.

6. The method according to claim 1 , wherein the compound is a diketone compound represented by the following Formula (1):

(wherein, in Formula (1),
R 1 represents a linear or branched alkylene group having 1 to 4 carbon atoms,
R 2 and R 3 , independently, represent a hydrogen atom, a halogen atom, a linear, branched, or cyclic alkyl group having 1 to 10 carbon atoms with or without a substituent, a hydroxymethyl group, a hydroxyethyl group, or an aryl group having 6 to 20 carbon atoms with or without a substituent, and
X 1 and X 2 , independently, represent a hydrogen atom, a halogen atom, a linear, branched, or cyclic alkyl group having 1 to 10 carbon atoms with or without a substituent, a hydroxymethyl group, a hydroxyethyl group, or an aryl group having 6 to 20 carbon atoms with or without a substituent, a functional group (1) below, or a functional group (2) below, wherein, one or more sets from R 2 and X 1 , R 2 and R 3 , and R 3 and X 2 , may be bonded directly or through a carbon atom so as to form a cyclic structure),

(wherein, R 4 and R 5 of the functional group (1) and R 6 of the functional group (2), independently, represent a hydrogen atom, a halogen atom, a linear, branched, or cyclic alkyl group having 1 to 10 carbon atoms with or without a substituent, a hydroxymethyl group, a hydroxyethyl group, or an aryl group having 6 to 20 carbon atoms with or without a substituent).

7. The method according to claim 6 , wherein the compound comprises at least one selected from the group consisting of diketone compounds represented by the following Formula (2) and diketone compounds represented by the following Formula (3), which comprise R 1 having two or less carbon atoms in Formula (1):

(wherein, in Formula (2) and Formula (3), R 7 , R 8 , R 9 , R 10 , R 11 and R 12 , independently, represent a hydrogen atom, a halogen atom, a linear, branched, or cyclic alkyl group having 1 to 10 carbon atoms with or without a substituent, a hydroxymethyl group, a hydroxyethyl group, or an aryl group having 6 to 20 carbon atoms with or without a substituent, and
X 1 and X 2 , independently, represent a hydrogen atom, a halogen atom, a linear, branched, or cyclic alkyl group having 1 to 10 carbon atoms with or without a substituent, a hydroxymethyl group, a hydroxyethyl group, or an aryl group having 6 to 20 carbon atoms with or without a substituent, a functional group (1) below, or a functional group (2) below, wherein, one or more sets from R 9 and X 1 , R 9 and R 10 , R 11 and R 12 , and R 12 and X 2 may be bonded directly or through a carbon atom so as to form a cyclic structure),

(wherein, R 4 and R 5 of the functional group (1) and R 6 of the functional group (2), independently, represent a hydrogen atom, a halogen atom, a linear, branched, or cyclic alkyl group having 1 to 10 carbon atoms with or without a substituent, a hydroxymethyl group, a hydroxyethyl group, or an aryl group having 6 to 20 carbon atoms with or without a substituent).

8. The method according to claim 6 , wherein the compound comprises at least one selected from the group consisting of diketone compounds in which at least one of the X 1 and X 2 of Formula (1) to Formula (3) is a linear, branched, or cyclic alkyl group having 4 or more carbon atoms with or without a substituent, a hydroxymethyl group, or a hydroxyethyl group.

9. The method according to claim 6 , wherein the compound comprises at least one selected from the group consisting of diketone compounds in which R 2 to R 12 of Formula (1) to Formula (3), independently, are a hydrogen atom or a halogen atom.

Assignees

• Fujimi Inc

Inventors

• Tamada Shuichi
• Yarita Satoru

Classifications

• H10P90/129

  by polishing · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• C09K3/1436

  Composite particles, e.g. coated particles · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title