Bidirectional two-base bipolar junction transistor operation, circuits, and systems with diode-mode turn-on

Patent metadata

Field	Value
Publication number	US-9374084-B2
Application number	US-201514934053-A
Country	US
Kind code	B2
Filing date	Nov 5, 2015
Priority date	Jun 24, 2013
Publication date	Jun 21, 2016
Grant date	Jun 21, 2016

Abstract

Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.

First claim

What is claimed is:

1. A method for switching a power bipolar semiconductor device which includes both first-conductivity-type emitter/collector regions and also second-conductivity-type base contact regions on each of both opposed surfaces of a semiconductor die, comprising the actions of:
at turn-on, when an external voltage difference applied between the emitter/collector regions has a polarity such that the emitter/collector region on the first of said surfaces can act as the collector of a vertical bipolar transistor while the emitter/collector region on the second of said surfaces acts as the emitter of the same vertical bipolar transistor,
beginning turn-on by shorting the base contact and emitter/collector regions on the first surface together, without driving the base contact region on the second surface, to thereby conduct current as a diode without external base current power; and thereafter
applying base current to one but not both of the base contact regions.

2. The method of claim 1 , wherein the emitter/collector regions are n-type, and the step of applying base current sources current to said base contact region.

3. The method of claim 1 , wherein the emitter/collector regions are p-type, and the step of applying base current sinks current from said base contact region.

4. The method of claim 1 , whereby said step of beginning turn-on conducts current between the emitter/collector regions on both said surfaces with a diode voltage drop characteristic of a p-n junction between the emitter/collector region on the second surface and the semiconductor die.

5. A method for switching a power bipolar semiconductor device which includes distinct first and second first-conductivity-type emitter/collector regions which are not electrically connected together except through the semiconductor die, and also includes distinct first and second second-conductivity-type base contact regions which are respectively close to the first and second collector/emitter regions and which are not electrically connected together except through the semiconductor die comprising:
at turn-on, when an external voltage difference is applied between the emitter/collector regions with a polarity such that the first emitter/collector region, on a first surface of the semiconductor die, can act as the collector of a vertical bipolar transistor while the second emitter/collector region, on a second surface of the semiconductor die, acts as the emitter of the same vertical bipolar transistor,
beginning turn-on by shorting the first base contact region and the first emitter/collector region together, to thereby conduct current between the first and second emitter/collector regions as a diode without external base current; and thereafter
applying base current at one but not both of the base contact regions.

6. The method of claim 5 , wherein the emitter/collector regions are n-type, and the step of applying base current sources current to said base contact region.

7. The method of claim 5 , wherein the emitter/collector regions are p-type, and the step of applying base current sinks current from said base contact region.

8. The method of claim 5 , whereby said step of beginning turn-on conducts current between the first and second emitter/collector regions with a diode voltage drop characteristic of a p-n junction between the second emitter/collector region and the semiconductor die.

Assignees

• Ideal Power Inc

Inventors

• Alexander William C
• Blanchard Richard A

Classifications

• H10D12/441

  Vertical IGBTs · CPC title

• H10D10/861

  having an emitter region comprising one or more non-monocrystalline elements of Group IV, e.g. amorphous silicon · CPC title

• H10D10/40

  Vertical BJTs {(Vertical Heterojunction BJTs H10D10/821)} · CPC title

• H10D62/137

  Collector regions of BJTs · CPC title

• H10D62/136

  of heterojunction BJTs  (vertical heterojunction BJTs having one or more non-monocrystalline Group IV elements H10D10/861) · CPC title