Optical member, display device, and light emitting device having the same
US-2016025921-A1 · Jan 28, 2016 · US
US9373761B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9373761-B2 |
| Application number | US-201414494281-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 23, 2014 |
| Priority date | Sep 23, 2014 |
| Publication date | Jun 21, 2016 |
| Grant date | Jun 21, 2016 |
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There is herein described a patterned thin-film wavelength converter which comprises a substrate having a first patterned surface with a first pattern, and a thin film deposited on the first patterned surface. The thin film consists of a wavelength converting material and has a second patterned surface that is distal from the substrate. The second patterned surface has a second pattern that is substantially the same as the first pattern of the substrate. An advantage of the patterned thin-film wavelength converter is that post-deposition processing is not required to produce a textured surface on the wavelength converting material. A method of making the patterned thin-film wavelength converter is also described.
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What is claimed is: 1. A method of making a patterned thin-film wavelength converter, comprising: (a) obtaining a substrate having a patterned surface with a pattern of features; (b) depositing a conformal intermediate layer on the patterned surface of the substrate; (c) depositing a thin film consisting of a wavelength converting material on the intermediate layer on the patterned surface of the substrate so that a surface of the thin film distal from the substrate has a pattern that is substantially the same as the pattern of the substrate; and (d) removing the thin film from the substrate by a laser or chemical lift-off technique to obtain the patterned thin-film wavelength converter. 2. The method of claim 1 , wherein the intermediate layer is selected from cerium oxide, Si 3 N 4 , ZnO, HfO 2 , GaN, Ta 2 O 5 , and WO 3 . 3. The method of claim 1 , wherein the intermediate layer comprises cerium oxide. 4. The method of claim 1 , wherein the wavelength converting material is a garnet-based phosphor having a general formula A 3 B 5 O 12 :Ce, wherein A is Y, Sc, La, Gd, Lu, or Tb and B is Al, Ga or Sc. 5. The method of claim 1 , wherein the substrate is selected from aluminum nitride, boron nitride, yttrium aluminum garnet, polycrystalline diamond, single crystal diamond and beryllium oxide. 6. The method of claim 1 , wherein the features have a shape selected from domes, cones, pyramids, and mesas. 7. The method of claim 1 , wherein the pattern of features is selected from a hexagonal pattern, a triangular pattern and a rectangular pattern. 8. The method of claim 1 , wherein the features have a height from 100 nm to 10 μm. 9. The method of claim 1 , wherein the features have a height from 1 μm to 3 μm. 10. The method of claim 1 , wherein the features have a base width from 200 nm to 20 μm. 11. The method of claim 1 , wherein the features have a base width from 2 μm to 6 μm. 12. The method of claim 1 , wherein the features have a pitch from 200 nm to 20 μm. 13. The method of claim 1 , wherein the features have a pitch from 2 μm to 6 μm. 14. The method of claim 1 , wherein the method further comprises attaching the patterned thin-film wavelength converter to a light emitting diode uses a silicone adhesive.
not being in contact with the bodies · CPC title
Scattering means (H10H20/82 takes precedence) · CPC title
of wavelength conversion means · CPC title
Coatings, e.g. passivation layers or antireflective coatings · CPC title
characterised by their shape, e.g. plate or foil · CPC title
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