Apparatus and method for laser heating and ion implantation

Patent metadata

Field	Value
Publication number	US-9373512-B2
Application number	US-201314094819-A
Country	US
Kind code	B2
Filing date	Dec 3, 2013
Priority date	Dec 3, 2013
Publication date	Jun 21, 2016
Grant date	Jun 21, 2016

Abstract

An apparatus and method for performing ion implantation while minimizing and/or repairing amorphization of the substrate material. The process comprises exposing a substrate to an ion beam and either concurrently or promptly following the ion implantation using a laser to anneal the surface. In addition, a laser may be utilized to preheat the substrate prior to ion implantation. The laser heats the substrate to a temperature that does not cause the resist layer to be damaged. By utilizing a laser to heat the substrate from the top surface the resist is not damaged allowing for the use of photo resist material.

First claim

What is claimed is:

1. An apparatus comprising:
an ion implanter for producing an ion beam adapted to implant a substrate; and
a laser adapted to anneal the substrate;
wherein the laser is adapted to heat an area of the substrate within a predetermined period of time after an ion implanter implants the area, and
wherein the laser heats the substrate to a temperature of approximately 400° C.

2. The apparatus of claim 1 wherein the laser is focused about 500 μm behind the ion beam.

3. The apparatus of claim 1 further comprising a second laser to preheat the substrate.

4. The apparatus of claim 1 further comprising a heating element to preheat the substrate.

5. The apparatus of claim 1 wherein the laser heats the substrate for approximately 1 millisecond.

6. The apparatus of claim 1 wherein the substrate does not include a hardmask thereover.

7. An apparatus comprising:
an ion implanter for producing an ion beam adapted to implant a substrate; and
a laser adapted to anneal the substrate;
wherein the laser is adapted to heat an area of the substrate prior to an ion implanter passing implanting the area, and
wherein the laser heats the substrate to a temperature at or above 400° C.

8. The apparatus of claim 7 wherein the laser is focused about 500 μm before the ion beam.

9. The apparatus of claim 7 further comprising a second laser to preheat the substrate.

10. The apparatus of claim 7 further comprising a heating element to preheat the substrate.

11. An apparatus comprising:
an ion implanter for producing an ion beam adapted to implant on a substrate; and
a laser adapted to anneal the substrate;
wherein the laser is adapted to heat an area of the substrate simultaneously while an ion implanter implants the area,
wherein the laser heats the substrate to a temperature at or above 400° C.

12. The apparatus of claim 11 further comprising a second laser to preheat the substrate.

13. The apparatus of claim 11 further comprising a heating element to preheat the substrate.

14. A method comprising the steps of:
forming a semiconductor element on a substrate;
exposing said semiconductor element to an ion beam;
promptly exposing said semiconductor element to a laser beam to heat the area exposed to the ion beam to temperature at or above 400° C. and anneal the semiconductor element.

15. The method of claim 14 further comprising the step of preheating the substrate.

16. A method comprising the steps of:
forming a semiconductor element on a substrate;
exposing said semiconductor element to a laser beam to heat the semiconductor element above a predetermined temperature;
promptly exposing said semiconductor element to an ion beam while the semiconductor is above the predetermined temperature,
wherein the predetermined temperature includes 400° C.

17. The method of claim 16 further comprising the step of preheating the substrate.

18. A method comprising the steps of:
forming a semiconductor element on a substrate; and
concurrently exposing a section of the semiconductor element to a laser beam and an ion beam, wherein the laser beam heats the section of said semiconductor element to a predetermined temperature,
wherein the predetermined temperature includes 400° C.

19. The method of claim 18 further comprising the step of preheating the substrate.

Assignees

• Globalfoundries Inc
• Globalfoundries Inc

Inventors

• Breil Nicolas

Classifications

• H10P30/222

  characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221) · CPC title

• H10P30/206 Primary

  into Group III-V semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title

• H10P34/42 Primary

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10D30/0241

  doping of vertical sidewalls, e.g. using tilted or multi-angled implants · CPC title