Magnetic devices and magnetic media with graphene overcoat
US-9305571-B2 · Apr 5, 2016 · US
US9373348B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9373348-B2 |
| Application number | US-201314087785-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 22, 2013 |
| Priority date | Nov 22, 2013 |
| Publication date | Jun 21, 2016 |
| Grant date | Jun 21, 2016 |
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An apparatus that includes a storage layer and a heating assistance element. The heating assistance element is adjacent to the storage layer or doped into the storage layer. The heating assistance element is configured to enhance spatial confinement of energy from a field to an area of the storage layer to which the field is applied.
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What is claimed is: 1. An apparatus comprising: a storage layer; and a heating assistance element, adjacent to the storage layer, configured to enhance spatial confinement of energy from a field to an area of the storage layer to which the field is applied, wherein the heating assistance element comprises a dielectric layer and a metal layer that is separate from the dielectric layer. 2. The apparatus of claim 1 and wherein the heating assistance element is further configured to enhance absorption of the energy in the storage layer from the applied field. 3. The apparatus of claim 1 and wherein an electrical conductivity of the dielectric layer is less than an electrical conductivity of the storage layer. 4. The apparatus of claim 1 and wherein the storage layer is a magnetic storage layer. 5. The apparatus of claim 4 and wherein the magnetic storage layer comprises FePt. 6. The apparatus of claim 5 and wherein the dielectric layer comprises at least one of TaO, SiO 2 , SiO, SiN, SiON, TiO or a carbon film with a large optical band gap. 7. The apparatus of claim 1 and further comprising an overcoat layer disposed over the dielectric layer, wherein the overcoat layer and the dielectric layer form a laminated overcoat. 8. The apparatus of claim 7 and wherein the overcoat layer comprises a semi-conductive amorphous carbon layer. 9. An apparatus comprising: a storage layer; and a dielectric layer disposed over the storage layer, the dielectric layer having an electrical conductivity that is less than an electrical conductivity of the storage layer, wherein the dielectric layer comprises a carbon film with increased four-fold bonds, and wherein a surface of the dielectric layer disposed over the storage layer and a surface of the storage layer that contacts the surface of the dielectric layer provide a heat-enhancing interface. 10. The apparatus of claim 9 , wherein an optical field is applied to heat an area of the storage layer via the dielectric layer, and wherein the interface between the dielectric layer and the storage layer is configured to enhance spatial confinement of the energy from the optical field to the area of the storage layer to which the optical field is applied. 11. The apparatus of claim 10 and further comprising an optical field coupling structure configured to apply the optical field to heat the area of the storage layer via the dielectric layer. 12. The apparatus of claim 10 and wherein the dielectric layer is further configured to enhance absorption of energy in the storage layer from the optical field applied to heat the storage layer. 13. The apparatus of claim 9 and wherein the storage layer is a magnetic storage layer. 14. An apparatus comprising: a storage layer; and a dielectric element, doped into the storage layer, configured to enhance absorption of energy in the storage layer from an optical field applied to heat the storage layer, wherein the dielectric element comprises a carbon film with increased four-fold bonds. 15. The apparatus of claim 14 , and wherein an electrical conductivity of the dielectric element is less than an electrical conductivity of the storage layer. 16. The apparatus of claim 14 and wherein the storage layer is a magnetic storage layer. 17. The apparatus of claim 16 and wherein the magnetic storage layer comprises FePt. 18. An apparatus comprising: a storage layer; and a heating assistance element, adjacent to the storage layer or doped into the storage layer, that is configured to increase spatial confinement of energy from a beam to an area of the storage layer to which the beam is applied by facilitating a generation of surface plasmon polaritons (SPPs) in a path of the beam, the SPPs increasing a heat/unit area provided by the beam to the storage layer, wherein the heating assistance element comprises a carbon film with increased four-fold bonds. 19. The apparatus of claim 18 , wherein: an electrical conductivity of the heating assistance element is less than an electrical conductivity of the storage layer, and the electrical conductivity of the heating assistance element being less than the electrical conductivity of the storage layer facilitates the generation of the SPPs in the path of the beam. 20. The apparatus of claim 18 , wherein the heating assistance element comprises a material having a thermal conductivity value and a refractive index value selected to increase absorption of the energy in the storage layer from the applied field by increasing a thermal gradient value of the storage layer. 21. The apparatus of claim 1 and wherein the heating assistance element is deposited over the storage layer.
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