Method of forming micropatterns

Patent metadata

Field	Value
Publication number	US-9372401-B2
Application number	US-201213588011-A
Country	US
Kind code	B2
Filing date	Aug 17, 2012
Priority date	Aug 23, 2011
Publication date	Jun 21, 2016
Grant date	Jun 21, 2016

Abstract

A method of forming micropatterns separated over a misalignment margin includes forming a first mold pattern including a main pattern and a separation-assist pattern, forming a first spacer mask having a first width around the first mold pattern, forming a second mold pattern using the first spacer mask as an etch mask, forming a second spacer mask having a second width around the second mold pattern, and forming a target pattern using the second spacer mask as an etch mask.

First claim

What is claimed is:

1. A method of forming micropatterns separated over a misalignment margin, the method comprising:
forming a first mold pattern, the first mold pattern including a main pattern and a separation-assist pattern, wherein forming the first mold pattern includes:
forming the separation-assist pattern to have a form of a recess pattern in the main pattern; and
forming the main pattern to include an extension portion extending in a first direction and an end portion connected to the extension portion, the end portion having a width larger than the extension portion, and the recess pattern being formed at the end portion;

forming a first spacer mask having a first width around the first mold pattern;
forming a second mold pattern using the first spacer mask as an etch mask;
forming a second spacer mask having a second width around the second mold pattern; and
forming a target pattern using the second spacer mask as an etch mask.

2. The method as claimed in claim 1 , wherein forming the first mold pattern includes forming the recess pattern to have a width of about 1 F to about 3 F, where F is a minimum feature size.

3. The method as claimed in claim 1 , wherein forming the first mold pattern includes forming the separation-assist pattern to have at least two recess patterns, an interval between the recess patterns being greater than or equal to 5 F.

4. The method as claimed in claim 1 , further comprising trimming a portion of the second spacer mask before forming the target pattern.

5. The method as claimed in claim 4 , wherein trimming the portion of the second spacer mask includes trimming a portion of a second spacer mask derived from the separation-assist pattern.

6. The method as claimed in claim 4 , further comprising forming a pad mask pattern that at least partially overlaps the second spacer mask, at least one of trimmed end portions of the second spacer mask being disposed at a distance of about 30 nm to about 70 nm from the pad mask pattern.

7. The method as claimed in claim 1 , wherein forming the first mold pattern includes forming the recess pattern to have a form of a cavity pattern in the main pattern, wherein an entire perimeter of the cavity pattern is surrounded by the end portion.

8. A method of forming micropatterns separated over a misalignment margin, the method comprising:
forming a first mold pattern, the first mold pattern including a main pattern and a separation-assist pattern, wherein forming the first mold pattern includes forming the separation-assist pattern to have a form of an auxiliary pattern adjacent to the main pattern;
forming a first spacer mask having a first width around the first mold pattern;
forming a second mold pattern using only the first spacer mask as an etch mask, the second mold pattern thereby inheriting the pattern of the first spacer mask;
forming a second spacer mask having a second width around only the second mold pattern; and
forming a target pattern using the second spacer mask as an etch mask.

9. The method as claimed in claim 8 , wherein forming the first mold pattern includes forming an interval between the main pattern and the auxiliary pattern to be about 1 F to about 3 F, where F is a minimum feature size.

10. The method as claimed in claim 8 , wherein forming the first mold pattern includes forming the main pattern to include an extension portion extending in a first direction and an end portion having a width larger than the extension portion, the auxiliary pattern being formed adjacent to the end portion.

11. The method as claimed in claim 8 , further comprising trimming a portion of the second spacer mask, a trimmed length of the second spacer mask derived from the separation-assist pattern being different from a trimmed length of the second spacer mask derived from the main pattern.

12. The method as claimed in claim 11 , wherein a distance between a trimmed end portion of the second spacer mask derived from the separation-assist pattern and a trimmed end portion of the second spacer mask derived from the main pattern is greater than or equal to 5 F.

13. A method of forming micropatterns separated over a misalignment margin, the method comprising:
forming a first mold pattern on a first material layer, the first mold pattern including a main pattern and a separation-assist pattern, and the separation-assist pattern being positioned to expose a space on the first material layer adjacent to the main pattern;
forming a first spacer mask having a first width around the first mold pattern;
forming a second mold pattern using only the first spacer mask as an etch mask, the second mold pattern thereby inheriting the pattern of the first spacer mask;
forming a second spacer mask having a second width around only the second mold pattern; and
forming a target pattern using the second spacer mask as an etch mask.

14. The method as claimed in claim 13 , further comprising trimming a portion of the second spacer mask before forming the target pattern, such that the second spacer mask includes a plurality of separated micropatterns.

15. The method as claimed in claim 14 , further comprising forming a pad mask pattern connected to one of the plurality of micropattern, the pad being positioned adjacent to the exposed space defined by the separation-assist pattern.

16. The method as claimed in claim 14 , wherein forming the exposed space defined by the separation-assist pattern defines a space between two adjacent micropatterns.

17. The method as claimed in claim 13 , wherein:
forming the first spacer mask around the first mold pattern includes forming the first spacer mask on all sidewalls of the first mold pattern;
forming the second mold pattern includes removing the first material layer, with the exception of material directly below the first spacer mask; and
forming the second spacer mask around the second mold pattern includes forming the second spacer mask on all sidewalls of the second mold pattern, the second mold pattern having a shape of the first spacer mask.

18. A method of forming micropatterns separated over a misalignment margin, the method comprising:
forming a first material layer on an etch target layer, where a target pattern is to be formed;
forming a first mold pattern on the first material layer, the first mold pattern including a main pattern and a separation-assist pattern, the separation-assist pattern having a form of:
an auxiliary pattern adjacent to the main pattern; or
a recess pattern in the main pattern, wherein:
the main pattern includes an extension portion in a first direction and an end portion connected to the extension portion,
the end portion has a width larger than the extension portion, and
the recess pattern is formed at the end portion;

forming a first spacer mask having a first width on a sidewall of the first mold pattern;
removing the first mold pattern;
etching the first material layer using only the first spacer mask as an etch mask to form a second mold pattern, the second mold pattern thereby inheriting the pattern of the first spacer mask;
forming a second spacer mask only on a sidewall of the second mold pattern;
removing the second mold pattern; and
etching the etch target layer using the second spacer mask as an etch mask, to form a target pattern.

Assignees

• Kim Ki-Jeong
• Min Jae-Ho
• Shin Kyoung-Sub
• Kim Dong-Hyun
• Samsung Electronics Co Ltd

Inventors

• Kim Ki-Jeong
• Min Jae-Ho
• Shin Kyoung-Sub
• Kim Dong-Hyun

Classifications

• G03F7/0035 Primary

  Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface · CPC title

• G03F7/00

  Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor (using photoresist structures for special production processes, see the relevant places, e.g. B44C, H10P76/00, H05K) · CPC title

• B44C1/22

  Removing surface-material, e.g. by engraving, by etching {(for multi-layer articles B44C3/005)} · CPC title

• H10P76/2041 Primary

  Photolithographic processes · CPC title