Film-forming material, group IV metal oxide film and vinylenediamide complex

US9371452B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9371452-B2
Application numberUS-201214342993-A
CountryUS
Kind codeB2
Filing dateSep 3, 2012
Priority dateSep 5, 2011
Publication dateJun 21, 2016
Grant dateJun 21, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.

First claim

Opening claim text (preview).

The invention claimed is: 1. A film-forming material, obtained by a process comprising: dissolving a compound comprising a titanium atom or a zirconium atom, with the titanium atom or the zirconium atom being bridged by a bridging oxygen atom, in an alcohol comprising two or more oxygen atoms, thereby obtaining a solution, and heating the solution. 2. The film-forming material according to claim 1 , wherein the alcohol is a cellosolve. 3. The film-forming material according to claim 2 , wherein the cellosolve is ethylene glycol monomethyl ether.

Assignees

Inventors

Classifications

  • the material containing zirconium, e.g. ZrO2 · CPC title

  • the material containing titanium, e.g. TiO2 · CPC title

  • the material containing hafnium, e.g. HfO2 · CPC title

  • the material being a silicon oxide, e.g. SiO2 · CPC title

  • the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title

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What does patent US9371452B2 cover?
An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate…
Who is the assignee on this patent?
Kinoshita Tomoyuki, Iwanaga Kohei, ASANO Sachio, and 8 more
What technology area does this patent fall under?
Primary CPC classification C09D1/00. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jun 21 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).