Semiconductor light-emitting device

Patent metadata

Field	Value
Publication number	US-9368690-B2
Application number	US-201414163992-A
Country	US
Kind code	B2
Filing date	Jan 24, 2014
Priority date	Jan 24, 2013
Publication date	Jun 14, 2016
Grant date	Jun 14, 2016

Abstract

A semiconductor light-emitting device can include a wavelength converting layer including a surrounding portion, which covers at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a substrate, a frame located on the substrate, the chip mounted on the substrate, a transparent material layer located on the wavelength converting layer so as to reduce from the wavelength converting layer toward a light-emitting surface thereof, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the transparent material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency and a color variation by using the surrounding portion and an inclined side surface of transparent material layer, and therefore can emit various colored lights including white light having a high light-emitting efficiency from a small light-emitting surface.

First claim

What is claimed is:

1. A semiconductor light-emitting device comprising:
a substrate having a mounting surface and conductor patterns formed on the mounting surface;
a semiconductor light-emitting chip having a top surface, a bottom surface, a side surface and at least one bottom chip electrode located on the bottom surface, and mounted on the mounting surface of the substrate via solder bumps, and the bottom chip electrode electrically connected to at least one of the conductor patterns of the substrate via at least one of the solder bumps;
a transparent material layer having a top surface, a bottom surface and a side surface being formed in a tabular shape, located over the top surface of the semiconductor light-emitting chip, and the bottom surface of the transparent material layer being larger than the top surface of the semiconductor light-emitting chip;
a wavelength converting layer having a top surface and a side surface disposed between the bottom surface of the transparent material layer and the side surface of the semiconductor light-emitting chip, contacting with the bottom surface of the transparent material layer and the side surface of the semiconductor light-emitting chip, and therefore including a surrounding portion to surround the side surface of the semiconductor light-emitting chip with the wavelength converting layer, and the side surface of the wavelength converting layer extending from the side surface of the semiconductor light-emitting chip toward the bottom surface of the transparent material layer;
a frame located adjacent the mounting surface of the substrate, and surrounding the wavelength converting layer and the transparent material layer; and
a reflective material layer having a top surface disposed between the frame and the side surfaces of the wavelength converting layer and the transparent material layer and between the bottom surface of the semiconductor light-emitting chip and the mounting surface of the substrate while surrounding the solder bumps, wherein an area of the top surface of the transparent material layer is smaller than that of the top surface of the wavelength converting layer, and the side surface of the transparent material layer is formed in a substantially inclined planar shape from the bottom surface of the transparent material layer toward the top surface of the transparent material layer, and thereby the area of the top surface of the transparent material layer becomes smaller than that of the top surface of the wavelength converting layer.

2. The semiconductor light-emitting device according to claim 1 , wherein the top surface of the reflective material layer becomes higher from the frame toward the transparent material layer with reference to the mounting surface of the substrate.

3. The semiconductor light-emitting device according to claim 1 , wherein the side surface of the transparent material layer includes a first side surface and a second side surface extending in a direction substantially perpendicular to the bottom surface of the transparent material layer from the bottom surface of the transparent material layer, the first side surface connects between the second side surface and the top surface of the transparent material layer, and inclines from the second side surface toward the top surface of the transparent material layer, and thereby the area of the top surface of the transparent material layer becomes smaller than that of the top surface of the wavelength converting layer.

4. The semiconductor light-emitting device according to claim 1 , wherein the side surface of the transparent material layer is formed in a concave shape toward the semiconductor light-emitting chip, and thereby the area of the top surface of the transparent material layer becomes smaller than that of the top surface of the wavelength converting layer.

5. The semiconductor light-emitting device according to claim 1 , wherein the side surface of the transparent material layer is formed in a convex shape toward the reflective material layer, and thereby the area of the top surface of the transparent material layer becomes smaller than that of the top surface of the wavelength converting layer.

6. The semiconductor light-emitting device according to claim 1 , wherein the side surface of the transparent material layer includes a first side surface and a second side surface extending in a direction substantially perpendicular to the bottom surface of the transparent material layer from the top surface of the transparent material layer, the first side surface connects between the second side surface and the bottom surface of the transparent material layer, and inclines from the bottom surface of the transparent material layer toward the second side surface, and thereby the area of the top surface of the transparent material layer becomes smaller than that of the top surface of the wavelength converting layer.

7. The semiconductor light-emitting device according to claim 1 , wherein the side surface of the transparent material layer is composed of a first side surface and a second side surface extending in a direction substantially perpendicular to the bottom surface of the transparent material layer from the top surface of the transparent material layer to the bottom surface of the transparent material layer, the first side surface connects the second side surface on the side surface of the transparent material layer, and inclines from the bottom surface of the transparent material layer to the top surface of the transparent material layer, and thereby the area of the top surface of the transparent material layer becomes smaller than that of the top surface of the wavelength converting layer.

8. The semiconductor light-emitting device according to claim 3 , wherein each of the first side surface and the second side surface of the transparent material layer is formed in a substantially planar shape.

9. A semiconductor light-emitting device comprising:
a substrate having a mounting surface and conductor patterns formed on the mounting surface;
a semiconductor light-emitting chip having a top surface, a bottom surface, a side surface and at least one bottom chip electrode located on the bottom surface, and the semiconductor light-emitting chip mounted on the mounting surface of the substrate via solder bumps, the bottom chip electrode electrically connected to at least one of the conductor patterns of the substrate via at least one of the solder bumps, and the top surface formed in a substantially square shape;
a transparent material layer having a top surface, a bottom surface and a side surface being formed in a tabular shape, and located over the top surface of the semiconductor light-emitting chip, and the bottom surface of the transparent material layer being larger than the top surface of the semiconductor light-emitting chip;
a wavelength converting layer having a top surface and a side surface disposed between the bottom surface of the transparent material layer and the side surface of the semiconductor light-emitting chip, contacting with the bottom surface of the transparent material layer and the side surface of the semiconductor light-emitting chip, and therefore including a surrounding portion to surround the side surface of the semiconductor light-emitting chip with the wavelength converting layer, and the side surface of the wavelength converting layer extending from the side surface of the semiconductor light-emitting chip toward the bottom surface of the transparent material layer;
a frame located adjacent the mounting surface of the substrate, and surrounding the wavelength converting layer and the transparent material layer; and
a reflective material layer having a top surface disposed betwee

Assignees

• Stanley Electric Co Ltd

Inventors

• Ito Kosaburo

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/00

  Package configurations · CPC title

• B60Q1/0088

  Details of electrical connections (B60Q1/305 takes precedence; electrical connection of the light source itself F21S41/192, F21S43/195) · CPC title

• H10H29/142

  Two-dimensional arrangements, e.g. asymmetric LED layout · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title