Semiconductor device having super junction structure and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9368575-B2
Application number	US-201314091663-A
Country	US
Kind code	B2
Filing date	Nov 27, 2013
Priority date	Jan 31, 2006
Publication date	Jun 14, 2016
Grant date	Jun 14, 2016

Abstract

A semiconductor device having a super junction structure includes: multiple first columns extending in a current flowing direction; and multiple second columns extending in the current flowing direction. The first and second columns are alternately arranged in an alternating direction. Each first column provides a drift layer. The first and second columns have a boundary therebetween, from which a depletion layer expands in case of an off-state. At least one of the first columns and the second columns have an impurity dose, which is inhomogeneous by location with respect to the alternating direction.

First claim

What is claimed is:

1. A semiconductor device having a super junction structure comprising:
a plurality of first columns having a first conductive type and extending in a current flowing direction; and
a plurality of second columns having a second conductive type and extending in the current flowing direction, wherein
the first columns and the second columns are alternately arranged in an alternating direction perpendicular to the current flowing direction so that the super junction structure is provided,
each first column provides a drift layer in case of an on-state for flowing a current therethrough,
the first columns and the second columns have a boundary between the first column and the second column, from which a depletion layer expands in case of an off-state,
each of the first columns and the second columns have a stripe planar pattern on a plane perpendicular to the current flowing direction, and
at least one of the first columns has a bridge portion arranged in the super junction structure, the bridge portion connecting one first column and a neighboring first column.

2. The device according to claim 1 , wherein
another one of the first columns and the second columns has a width along with the alternating direction,
the bridge portion has a width along with an extending direction of the stripe planar pattern, which is perpendicular to the alternating direction, and
the width of the bridge portion is smaller than the width of the other one of the first columns and the second columns.

3. The device according to claim 1 , wherein
the bridge portion includes a plurality of bridge elements,
the bridge elements have a distance between one bridge element and a neighboring bridge element along with an extending direction of the stripe planar pattern, which is perpendicular to the alternating direction, and
the distance of the bridge elements varies by location.

4. The device according to claim 1 , wherein
the bridge portion includes a plurality of bridge elements,
each bridge element has a width along with an extending direction of the stripe planar pattern, which is perpendicular to the alternating direction, and
the width of the bridge elements varies by location.

5. The device according to claim 1 , wherein
the device is a vertical type MOSFET or a lateral type MOSFET.

6. The device according to claim 1 , wherein
the bridge portion forms a break of the first conductivity type in one of the second columns along the entire height of the one of the second columns.

Assignees

• Denso Corp
• Denso Coporation

Inventors

• Miyajima Takeshi

Classifications

• H10P14/36

  characterised by treatments done before the formation of the materials · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/20

  of semiconductor materials · CPC title

• H10D62/058

  by using trenches, e.g. implanting into sidewalls of trenches or refilling trenches · CPC title

• H10D62/111

  Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures · CPC title