Photoelectric conversion device, image pickup system and method of manufacturing photoelectric conversion device

Patent metadata

Field	Value
Publication number	US-9368544-B2
Application number	US-201514685337-A
Country	US
Kind code	B2
Filing date	Apr 13, 2015
Priority date	Feb 29, 2012
Publication date	Jun 14, 2016
Grant date	Jun 14, 2016

Abstract

A photoelectric conversion device includes a first semiconductor substrate including a photoelectric conversion unit for generating a signal charge in accordance with an incident light, and a second semiconductor substrate including a signal processing unit for processing an electrical signal on the basis of the signal charge generated in the photoelectric conversion unit. The signal processing unit is situated in an orthogonal projection area from the photoelectric conversion unit to the second semiconductor substrate. A multilayer film including a plurality of insulator layers is provided between the first semiconductor substrate and the second semiconductor substrate. The thickness of the second semiconductor substrate is smaller than 500 micrometers. The thickness of the second semiconductor substrate is greater than the distance from the second semiconductor substrate and a light-receiving surface of the first semiconductor substrate.

First claim

What is claimed is:

1. A photoelectric conversion device, comprising:
a first semiconductor substrate which includes a photoelectric conversion unit where a plurality of photoelectric conversion elements are arranged;
a second semiconductor substrate which includes a signal processing unit for processing an electrical signal on basis of a signal charge generated in the photoelectric conversion unit, the second semiconductor substrate having a first surface where a plurality of transistors which constitutes the signal processing unit and a second surface opposite to the first surface; and
a lens array arranged on the first semiconductor substrate,
wherein the first semiconductor substrate and the second semiconductor substrate are stacked on each other, and at least a part of the signal processing unit being situated in an orthogonal projection area from the photoelectric conversion unit to the second semiconductor substrate, and
wherein a distance between the first surface of the second semiconductor substrate and the second surface of the second semiconductor substrate is greater than a distance between the first surface of the second semiconductor substrate and a light input surface of the lens array.

2. The photoelectric conversion device according to claim 1 , wherein the thickness of the second semiconductor substrate is equal to or greater than 10 times the thickness of the first semiconductor substrate and is equal to or smaller than 100 times the thickness of the first semiconductor substrate.

3. The photoelectric conversion device according to claim 1 , wherein the thickness of the second semiconductor substrate is equal to or greater than 20 micrometers and is equal to or smaller than 400 micrometers.

4. The photoelectric conversion device according to claim 1 , wherein the first semiconductor substrate and the second semiconductor substrate are silicon substrates, the thickness of the first semiconductor substrate is equal to or smaller than 10 micrometers, and the thickness of the second semiconductor substrate is equal to or greater than 50 micrometers.

5. The photoelectric conversion device according to claim 1 , wherein a distance between the light input surface of the lens array and a light receiving surface of the first semiconductor substrate is not greater than a distance between the first semiconductor substrate and the second semiconductor substrate.

6. The photoelectric conversion device according to claim 1 , further comprising a member including a portion of which thermal conductivity is higher than a thermal conductivity of an insulator layer arranged between the first semiconductor substrate and the second semiconductor substrate,
wherein a distance between the portion and the second surface of the second semiconductor substrate is smaller than a distance between the first semiconductor substrate and the second semiconductor substrate.

7. The photoelectric conversion device according to claim 1 , further comprising a member including a first portion of which thermal conductivity is higher than a thermal conductivity of an insulator layer arranged between the first semiconductor substrate and the second semiconductor substrate and including a second portion of which thermal conductivity is higher than a thermal conductivity of the second semiconductor substrate,
wherein a distance between the first portion and the second surface of the second semiconductor substrate is smaller than a distance between the first semiconductor substrate and the second semiconductor substrate, and the first portion is arranged between the second semiconductor substrate and the first portion.

8. The photoelectric conversion device according to claim 6 , wherein a surface area of a surface of the member on the side opposite to the second semiconductor substrate in the orthogonal projection area from the photoelectric conversion unit is larger than a surface area of the second surface of the second semiconductor substrate in the orthogonal projection area from the photoelectric conversion unit.

9. The photoelectric conversion device according to claim 1 , wherein a surface area of the second surface of the second semiconductor substrate is larger than a surface area of the first surface of the second semiconductor substrate.

10. The photoelectric conversion device according to claim 1 , further comprising a plurality of conductor layers arranged between the photoelectric conversion unit and the signal processing unit, wherein each of the plurality of conductor layers is made of copper.

11. The photoelectric conversion device according to claim 1 , wherein the signal processing unit in the second semiconductor substrate includes a comparator of an analog-to-digital conversion circuit in the second semiconductor substrate.

12. The photoelectric conversion device according to claim 1 , wherein the signal processing unit in the second semiconductor substrate includes a counter of an analog-to-digital conversion circuit.

13. The photoelectric conversion device according to claim 1 , wherein the signal processing unit in the second semiconductor substrate includes an image signal processing circuit that generates image data from digital signals.

14. The photoelectric conversion device according to claim 1 , wherein
the photoelectric conversion unit includes a signal generating circuit which generates an electrical signal on the basis of the signal charge generated in the photoelectric conversion element, the signal generating circuit comprising a transfer transistor, an amplifying transistor and a reset transistor.

15. The photoelectric conversion device according to claim 1 , wherein an opening is provided to penetrate the first semiconductor substrate.

16. An image pickup system in which a semiconductor device is incorporated, the semiconductor device comprising:
a first semiconductor substrate which includes a photoelectric conversion unit where a plurality of photoelectric conversion elements are arranged; and
a second semiconductor substrate which includes a signal processing unit for processing an electrical signal on basis of a signal charge generated in the photoelectric conversion unit, the second semiconductor substrate having a first surface where a plurality of transistors which constitutes the signal processing unit and a second surface opposite to the first surface; and
a lens array arranged on the first semiconductor substrate,
wherein the first semiconductor substrate and the second semiconductor substrate are stacked on each other, and at least a part of the signal processing unit being situated in an orthogonal projection area from the photoelectric conversion unit to the second semiconductor substrate,
wherein a distance between the first surface of the second semiconductor substrate and the second surface of the second semiconductor substrate is greater than a distance between the first surface of the second semiconductor substrate and a light input surface of the lens array.

17. The image pickup system according to claim 16 , wherein the thickness of the semiconductor device is smaller than 500 micrometers.

18. The image pickup system according to claim 16 , further comprising:
a circuit board; and
a package including a transparent member which covers the semiconductor device, a first terminal connected to the semiconductor device and a second terminal connected to the circuit board.

19. The image pickup system according to claim 16 , further comprising:
a communication unit that provide a connection to the Inter

Assignees

• Canon Kk

Inventors

• Shimotsusa Mineo
• Ichikawa Takeshi
• Sekine Yasuhiro

Classifications

• H10W72/983

  Reinforcing structures, e.g. collars · CPC title

• H10W72/536

  the connected ends being ball-shaped · CPC title

• H10W72/59

  Bond pads specially adapted therefor · CPC title

• H10W72/90

  Bond pads, in general · CPC title

• H10F77/60

  Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations · CPC title