Light detection device having a semiconductor light detection element and a mounting substrate with quenching circuits

Patent metadata

Field	Value
Publication number	US-9368528-B2
Application number	US-201214350647-A
Country	US
Kind code	B2
Filing date	Aug 2, 2012
Priority date	Oct 21, 2011
Publication date	Jun 14, 2016
Grant date	Jun 14, 2016

Abstract

A light detection device 1 has a semiconductor light detection element having a semiconductor substrate, and a mounting substrate arranged as opposed to the semiconductor light detection element. The semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in the semiconductor substrate, and electrodes electrically connected to the respective avalanche photodiodes and arranged on a second principal surface side of the semiconductor substrate. The mounting substrate includes a plurality of electrodes arranged corresponding to the respective electrodes on a third principal surface side, and quenching resistors electrically connected to the respective electrodes and arranged on the third principal surface side. The electrodes and the electrodes are connected through bump electrodes.

First claim

The invention claimed is:

1. A light detection device comprising:
a semiconductor light detection element having a semiconductor substrate including first and second principal surfaces opposed to each other; and
a mounting substrate arranged as opposed to the semiconductor light detection element and having a third principal surface opposed to the second principal surface of the semiconductor substrate,
wherein the semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in the semiconductor substrate, and first electrodes electrically connected to the respective avalanche photodiodes and arranged on the second principal surface side of the semiconductor substrate,
wherein the mounting substrate includes a plurality of second electrodes arranged corresponding to the respective first electrodes on the third principal surface side, and quenching circuits electrically connected to the respective second electrodes and arranged on the third principal surface side, and
wherein the first electrodes and the second electrodes corresponding to the first electrodes are connected through bump electrodes.

2. The light detection device according to claim 1 ,
wherein each of the avalanche photodiodes has:
the semiconductor substrate of a first conductivity type;
a first semiconductor region of a second conductivity type formed on the first principal surface side of the semiconductor substrate;
a second semiconductor region of the second conductivity type formed in the first semiconductor region and having a higher impurity concentration than the first semiconductor region; and
a third electrode arranged on the first principal surface side of the semiconductor substrate and electrically connected to the second semiconductor region, and
wherein in the semiconductor substrate, a through-hole electrode penetrating from the first principal surface side to the second principal surface side and electrically connecting the corresponding third electrode and first electrode is formed for each avalanche photodiode.

3. The light detection device according to claim 1 ,
wherein each of the avalanche photodiodes has:
the semiconductor substrate of a first conductivity type;
a first semiconductor region of a second conductivity type formed on the second principal surface side of the semiconductor substrate; and
a second semiconductor region of the first conductivity type forming a PN junction with the first semiconductor region and having a higher impurity concentration than the semiconductor substrate, and
wherein the first semiconductor region and the first electrode are electrically connected.

4. The light detection device according to claim 1 ,
wherein the mounting substrate further includes a common electrode to which the quenching circuits are connected in parallel.

5. The light detection device according to claim 1 ,
wherein the quenching circuits are passive quenching circuits or active quenching circuits.

Assignees

• Nagano Terumasa
• HOSOKAWA Noburo
• Suzuki Tomofumi
• Baba Takashi
• Hamamatsu Photonics Kk

Inventors

• Nagano Terumasa
• HOSOKAWA Noburo
• Suzuki Tomofumi
• Baba Takashi

Classifications

• H10F39/811

  Interconnections · CPC title

• H10F39/804

  Containers or encapsulations · CPC title

• H10F39/189

  X-ray, gamma-ray or corpuscular radiation imagers · CPC title

• H10F39/107

  having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays · CPC title

• H10F30/225

  the potential barrier working in avalanche mode, e.g. avalanche photodiodes · CPC title