Semiconductor device and method for forming the same
US-2024395669-A1 · Nov 28, 2024 · US
US9368482B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9368482-B2 |
| Application number | US-201514935105-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 6, 2015 |
| Priority date | Jul 25, 2013 |
| Publication date | Jun 14, 2016 |
| Grant date | Jun 14, 2016 |
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Stack packages are provided. The stack package includes a first chip configured to include a first chip body having a top surface and a bottom surface, first through electrodes penetrating the first chip body, and an insulation layer disposed on the bottom surface of the first chip body, and first bumps disposed on the top surface of the first chip body, and a second chip configured to include a second chip body having a top surface and a bottom surface, and second bumps disposed on the top surface of the second chip body. The first and second chips are vertically stacked such that the top surface of the second chip body is directly attached to the first insulation layer and the second bumps of the second chip penetrate the first insulation layer of the first chip to pierce the first through electrodes of the first chip.
Opening claim text (preview).
What is claimed is: 1. A stack package comprising: a first chip configured to include a first chip body having a top surface and a bottom surface, first through electrodes penetrating the first chip body, an insulation layer disposed on the bottom surface of the first chip body, and first bumps disposed on the top surface of the first chip body; and a second chip configured to include a second chip body having a top surface and a bottom surface, and second bumps disposed on the…
Electricity · mapped topic
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