Anti-diffusion layer, preparation method thereof, thin-film transistor (TFT), array substrate, display device

Patent metadata

Field	Value
Publication number	US-9368360-B2
Application number	US-201314345607-A
Country	US
Kind code	B2
Filing date	May 31, 2013
Priority date	Apr 28, 2013
Publication date	Jun 14, 2016
Grant date	Jun 14, 2016

Abstract

An anti-diffusion layer, a preparation method thereof, a thin-film transistor (TFT), an array substrate and a display device are provided, involve the display device manufacturing field and can resolve problem that a high atmosphere temperature is need in process of preparing a tantalum dioxide anti-diffusion layer by PVD or CVD, which causes the gate electrode to volatilize and affect the performance of a display device. The method for preparing the anti-diffusion layer comprises: placing a conductive base ( 1 ) and a cathode ( 4 ) in a electrolytic solution ( 3 ), taking the conductive base ( 1 ) as an anode, and forming a tantalum dioxide anti-diffusion layer on the conductive base ( 1 ) after energizing.

First claim

The invention claimed is:

1. A method for preparing an anti-diffusion layer, comprising:
placing a conductive base and a cathode in an electrolytic solution, taking the conductive base as an anode, and forming a tantalum dioxide anti-diffusion layer on the conductive base after energizing, wherein the electrolytic solution is a tantalum sulfate solution; a mass concentration of the tantalum sulfate solution is ranged from 6 to 9 percent; and the pH value is between 8 and 10, wherein the electrolytic solution also includes a catalyst; the catalyst is methanol; and the mass concentration of methanol is ranged from 10 to 15 percent.

2. The method for preparing the anti-diffusion layer according to claim 1 , wherein the conductive base is made of copper or aluminum.

3. The method for preparing the anti-diffusion layer according to claim 1 , wherein the conductive base is a gate electrode of a thin-film transistor (TFT).

4. The method for preparing the anti-diffusion layer according to claim 3 , wherein the energizing voltage is ranged from 10 to 30 V; the energizing current is ranged from 30 to 100 mA; and the energizing time is 8 to 12 s.

5. The method for preparing the anti-diffusion layer according to claim 2 , wherein the conductive base is a gate electrode of a thin-film transistor (TFT).

6. The method for preparing the anti-diffusion layer according to claim 5 , wherein the energizing voltage is ranged from 10 to 30 V; the energizing current is ranged from 30 to 100 mA; and the energizing time is 8 to 12 s.

Assignees

• Boe Technology Group Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Jiang Chunsheng
• Chen Haijing
• Wang Dongfang

Classifications

• H10P14/69393

  the material containing tantalum, e.g. Ta2O5 · CPC title

• H10P14/6324

  Formation by anodic treatments, e.g. anodic oxidation · CPC title

• H10P14/47 Primary

  Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

• H10D86/431

  having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs · CPC title

• H10D86/0241

  using liquid deposition, e.g. printing · CPC title