Method of manufacturing silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor device

Patent metadata

Field	Value
Publication number	US-9368345-B2
Application number	US-201314424768-A
Country	US
Kind code	B2
Filing date	Dec 12, 2013
Priority date	Feb 7, 2013
Publication date	Jun 14, 2016
Grant date	Jun 14, 2016

Abstract

A step of preparing a silicon carbide substrate, a step of forming a first silicon carbide semiconductor layer on the silicon carbide substrate using a first source material gas, and a step of forming a second silicon carbide semiconductor layer on the first silicon carbide semiconductor layer using a second source material gas are provided. In the step of forming a first silicon carbide semiconductor layer and the step of forming a second silicon carbide semiconductor layer, ammonia gas is used as a dopant gas, and the first source material gas has a C/Si ratio of not less than 1.6 and not more than 2.2, the C/Si ratio being the number of carbon atoms to the number of silicon atoms.

First claim

The invention claimed is:

1. A method of manufacturing a silicon carbide semiconductor substrate, comprising steps of:
preparing a silicon carbide substrate;
forming a first silicon carbide semiconductor layer on said silicon carbide substrate using a first source material gas; and
forming a second silicon carbide semiconductor layer on said first silicon carbide semiconductor layer using a second source material gas,
in said step of forming a first silicon carbide semiconductor layer and said step of forming a second silicon carbide semiconductor layer, ammonia gas being used as a dopant gas, said first source material gas having a C/Si ratio of not less than 1.6 and not more than 2.2, said C/Si ratio being the number of carbon atoms to the number of silicon atoms,
an impurity concentration in said first silicon carbide semiconductor layer is higher than an impurity concentration in said second silicon carbide semiconductor layer.

2. A method of manufacturing a silicon carbide semiconductor device, comprising steps of:
preparing a silicon carbide semiconductor substrate; and
processing said silicon carbide semiconductor substrate,
in said step of preparing a silicon carbide semiconductor substrate, said silicon carbide semiconductor substrate being manufactured with the method of manufacturing a silicon carbide semiconductor substrate according to claim 1 .

3. A method of manufacturing a silicon carbide semiconductor substrate, comprising steps of:
preparing a silicon carbide substrate;
forming a first silicon carbide semiconductor layer on said silicon carbide substrate using a first source material gas; and
forming a second silicon carbide semiconductor layer on said first silicon carbide semiconductor layer using a second source material gas,
in said step of forming a first silicon carbide semiconductor layer and said step of forming a second silicon carbide semiconductor layer, ammonia gas being used as a dopant gas, said first source material gas having a C/Si ratio of not less than 1.6 and not more than 2.2, said C/Si ratio being the number of carbon atoms to the number of silicon atoms,
the thickness of said first silicon carbide semiconductor layer being smaller than the thickness of said second silicon carbide semiconductor layer.

4. A method of manufacturing a silicon carbide semiconductor device, comprising steps of:
preparing a silicon carbide semiconductor substrate; and
processing said silicon carbide semiconductor substrate,
in said step of preparing a silicon carbide semiconductor substrate, said silicon carbide semiconductor substrate being manufactured with the method of manufacturing a silicon carbide semiconductor substrate according to claim 3 .

5. A method of manufacturing a silicon carbide semiconductor substrate, comprising steps of:
preparing a silicon carbide substrate made of single-crystal silicon carbide;
forming a first silicon carbide semiconductor layer by vapor phase epitaxy on said silicon carbide substrate using a first source material gas and a first carrier gas containing hydrogen; and
forming a second silicon carbide semiconductor layer by vapor phase epitaxy on said first silicon carbide semiconductor layer using a second source material gas and a second carrier gas containing hydrogen,
in said step of forming a first silicon carbide semiconductor layer and said step of forming a second silicon carbide semiconductor layer, ammonia gas being used as a dopant gas, said first source material gas having a C/Si ratio of not less than 1.6 and not more than 2.2, said C/Si ratio being the number of carbon atoms to the number of silicon atoms, a ratio of the number of Si atoms to the number of H atoms being not less than 0.0002 and not more than 0.0006.

6. The method of manufacturing a silicon carbide semiconductor substrate according to claim 5 , wherein
in said step of forming a first silicon carbide semiconductor layer and said step of forming a second silicon carbide semiconductor layer, a ratio of the number of ammonia molecules to the number of hydrogen molecules is not less than 2.0×10 −8 and not more than 1.0×10 −6 .

7. A method of manufacturing a silicon carbide semiconductor device, comprising steps of:
preparing a silicon carbide semiconductor substrate; and
processing said silicon carbide semiconductor substrate, in said step of preparing a silicon carbide semiconductor substrate, said silicon carbide semiconductor substrate being manufactured with the method of manufacturing a silicon carbide semiconductor substrate according to claim 5 .

Assignees

• Sumitomo Electric Industries

Inventors

• Genba Jun

Classifications

• H10P14/3442

  N-type · CPC title

• H10P14/3438

  Doping during depositing · CPC title

• H10P14/3208

  Silicon carbide · CPC title

• H10P14/2904

  Silicon carbide · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title