Method of manufacturing an electrode for an energy storage device

US9368249B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9368249-B2
Application numberUS-201113806104-A
CountryUS
Kind codeB2
Filing dateJun 14, 2011
Priority dateJun 25, 2010
Publication dateJun 14, 2016
Grant dateJun 14, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Zn layer 21 or Zn alloy layer, Ni layer 22 , and Sn layer 23 or Sn alloy layer are formed on a connecting terminal part 10 a of a positive electrode composed of Al by plating. Accordingly, this can solder Cu negative electrode, which is composed of metal that is different species from Al, through Sn layer 23 or Sn alloy layer so that jointing strength of the Al positive electrode and the Cu negative electrode can be enhanced. Further, since the contacting area is increased in comparison with the conventional jointing by the spot-welding or the conventional fastening by a bolt so that the resistance value at the contacting point is reduced, the voltage drop of the energy storage device by contact resistance can be reduced.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method of manufacturing an electrode for an energy storage device, comprising: forming a positive electrode by: forming a layer of Zn or a Zn alloy on a positive electrode containing Al by plating; forming a layer of Ni on the layer of Zn or Zn alloy by plating; and forming a layer of Sn or Sn alloy on the Ni layer by plating; providing a negative electrode containing Cu; and connecting the positive electrode to the negative electrode by soldering. 2. The method of claim 1 wherein the step of soldering includes using Sn as the solder. 3. The method of claim 1 further comprising; prior to the step of forming a layer of Zn or a Zn alloy, degreasing a surface of the positive electrode containing Al by using an organic solvent and etching the surface of the positive electrode degreased in the degreasing step, by using an etchant; performing the Zn plating step of forming a layer of Zn or a Zn alloy by plating on the surface of the positive electrode etched in the etching step by using liquid zincate; performing the Ni plating step of forming a layer of Ni on the layer of Zn or a Zn alloy by plating on a surface of the layer of Zn or a Zn alloy formed in the Zn plating step by using a Ni plating solution; and performing the Sn plating step of forming a layer of Sn or Sn alloy on a surface of the layer of Ni formed in the Ni plating step by using a Sn plating solution.

Assignees

Inventors

Classifications

  • characterised by the material of the leads or tabs · CPC title

  • Contact plating, i.e. electroless electrochemical plating · CPC title

  • using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50 · CPC title

  • H01B1/023Primary

    Alloys based on aluminium · CPC title

  • Aluminium · CPC title

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What does patent US9368249B2 cover?
Zn layer 21 or Zn alloy layer, Ni layer 22 , and Sn layer 23 or Sn alloy layer are formed on a connecting terminal part 10 a of a positive electrode composed of Al by plating. Accordingly, this can solder Cu negative electrode, which is composed of metal that is different species from Al, through Sn layer 23 or Sn alloy layer so that jointing strength of the Al positive electrode and…
Who is the assignee on this patent?
Nakamura Katsuji, Tsuruta Kaichi, Ozaki Yuji, and 4 more
What technology area does this patent fall under?
Primary CPC classification H01B1/023. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 14 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).