Bandgap reference circuit and power supply circuit

Patent metadata

Field	Value
Publication number	US-9367077-B2
Application number	US-201213665641-A
Country	US
Kind code	B2
Filing date	Oct 31, 2012
Priority date	Nov 16, 2011
Publication date	Jun 14, 2016
Grant date	Jun 14, 2016

Abstract

A BGR circuit includes a first bipolar transistor and a second bipolar transistor that are connected between a power supply terminal and a ground terminal, each base of the first bipolar transistor and the second bipolar transistor being connected to an output terminal. A first resistor is connected between the ground terminal and the first bipolar transistor. A second resistor and a third resistor are connected in series between the first resistor and the second bipolar transistor. A temperature correction circuit is connected between the ground terminal and a node between the second resistor and the third resistor, and includes a first transistor having a base connected to an end of the first bipolar transistor of the first resistor. The temperature correction circuit further includes a fourth resistor connected in series to the first transistor.

First claim

What is claimed is:

1. A bandgap reference circuit comprising:
a first bipolar transistor and a second bipolar transistor that are connected between a first power supply terminal and a second power supply terminal, each base of the first bipolar transistor and the second bipolar transistor being connected to an output terminal;
a first resistor that is connected between the second power supply terminal and the first bipolar transistor;
a second resistor and a third resistor that are connected in series between an end of the first bipolar transistor that connects together with the first resistor and the second bipolar transistor; and
a first temperature correction circuit that is connected between the second power supply terminal and a node between the second resistor and the third resistor, wherein the first temperature correction circuit comprises:
a first transistor that is connected between the second power supply terminal and the node between the second resistor and the third resistor, the base of the first transistor being connected at a junction where the end of the first bipolar transistor connects together with the first resistor; and
a fourth resistor that is connected in series between the first transistor and the second power supply terminal.

2. The bandgap reference circuit according to claim 1 , wherein a current density of the second bipolar transistor is larger than a current density of the first bipolar transistor, and
wherein the third resistor is coupled to a node connecting the first resistor and the first bipolar transistor together.

3. The bandgap reference circuit according to claim 1 , wherein the fourth resistor is a fixed resistor.

4. The bandgap reference circuit according to claim 1 , wherein the fourth resistor is a variable resistor.

5. The bandgap reference circuit according to claim 1 , further comprising a fifth resistor that is connected between the first resistor and the second power supply terminal,
wherein the first temperature correction circuit further comprises:
a second transistor that is connected between the second power supply terminal and the node between the second resistor and the third resistor, the base of the second transistor being connected to a node between the first resistor and the fifth resistor; and
a sixth resistor that is connected in series between the second transistor and the second power supply terminal.

6. The bandgap reference circuit according to claim 5 , wherein the sixth resistor is a fixed resistor.

7. The bandgap reference circuit according to claim 5 , wherein the sixth resistor is a variable resistor.

8. The bandgap reference circuit according to claim 1 , further comprising an amplifier including an input connected to an end of the first power supply terminal of the first bipolar transistor and an end of the first power supply terminal of the second bipolar transistor, and an output connected to the output terminal.

9. A power supply circuit comprising: the bandgap reference circuit according to claim 1 ; and a second temperature correction circuit and a booster unit that are provided between the bandgap reference circuit and the output terminal, wherein the booster unit comprises:
a first booster resistor that is connected between each base of the first bipolar transistor and the second bipolar transistor and the output terminal; and
a second booster resistor that is connected between each base of the first bipolar transistor and the second bipolar transistor and the second power supply terminal, and the second temperature correction circuit comprises:
a third bipolar transistor that is connected between the first power supply terminal and the second power supply terminal, the base of the third bipolar transistor connected to anode between the first booster resistor and the second booster resistor; and
a seventh resistor that is connected in series to the third bipolar transistor between the first power supply terminal and the second power supply terminal.

10. The power supply circuit according to claim 9 , wherein the seventh resistor is a fixed resistor.

11. The power supply circuit according to claim 9 , wherein the seventh resistor is a variable resistor.

12. The power supply circuit according to claim 9 , wherein the booster unit
further comprises a third booster resistor that is connected between the first booster resistor and the output terminal, and
the second temperature correction circuit comprises:
a fourth bipolar transistor that is connected between the first power supply terminal and the second power supply terminal, the base of the fourth bipolar transistor being connected to a node between the first booster resistor and the third booster resistor,
an eighth resistor that is connected in series to the fourth bipolar transistor between the first power supply terminal and the second power supply terminal.

13. The power supply circuit according to claim 12 , wherein the eighth resistor is a fixed resistor.

14. The power supply circuit according to claim 12 , wherein the eighth resistor is a variable resistor.

15. The bandgap reference circuit according to claim 1 , wherein the first temperature correction circuit further comprises:
a second transistor that is connected between the second power supply terminal and the node between the second resistor and the third resistor, the base of the second transistor being connected to the first resistor.

16. The bandgap reference circuit according to claim 1 , further comprising:
a booster unit connected to an output terminal, the booster unit comprising:
a first booster resistor that is connected between each base of the first bipolar transistor and the second bipolar transistor and the output terminal;
a second booster resistor that is connected between each base of the first bipolar transistor and the second bipolar transistor and the second power supply terminal; and
a third bipolar transistor, a base of the third bipolar transistor being connected to a node between the first booster resistor and the second booster resistor.

17. A reference circuit comprising:
a first transistor and a second transistor that are connected between a first power supply terminal and a second power supply terminal, each control terminal of the first transistor and the second transistor being connected to an output terminal;
a first resistor that is connected between the second power supply terminal and the first transistor;
a second resistor and a third resistor that are connected in series between an end, where the first transistor and the first resistor are coupled together, and the second transistor; and a first temperature correction circuit that is connected between the second power supply terminal and a node between the second resistor and the third resistor, wherein

the first temperature correction circuit comprises:
a third transistor that is connected between the second power supply terminal and the node between the second resistor and the third resistor, the control terminal of the third transistor being connected at a junction where the end of the first transistor and the first resistor are coupled together; and
a fourth resistor that is connected in series between the third transistor and the second power supply terminal.

18. The reference circuit according to claim 17 , wherein the first temperature correction circuit further comprises:
a fourth transistor that is connected between the second power supply terminal and the node between the second resistor and the third resistor, the control t

Assignees

• Renesas Electronics Corp

Inventors

• Kiuchi Hideki

Classifications

• G05F3/267

  using both bipolar and field-effect technology · CPC title

• G05F3/30 Primary

  Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities (G05F3/26 takes precedence) · CPC title

• G05F3/08 Primary

  wherein the variable is DC · CPC title