Detection of electromagnetic radiation using nonlinear materials

Patent metadata

Field	Value
Publication number	US-9366576-B2
Application number	US-201514634307-A
Country	US
Kind code	B2
Filing date	Feb 27, 2015
Priority date	Jul 3, 2012
Publication date	Jun 14, 2016
Grant date	Jun 14, 2016

Abstract

An apparatus for detecting electromagnetic radiation within a target frequency range is provided. The apparatus includes a substrate and one or more resonator structures disposed on the substrate. The substrate can be a dielectric or semiconductor material. Each of the one or more resonator structures has at least one dimension that is less than the wavelength of target electromagnetic radiation within the target frequency range, and each of the resonator structures includes at least two conductive structures separated by a spacing. Charge carriers are induced in the substrate near the spacing when the resonator structures are exposed to the target electromagnetic radiation. A measure of the change in conductivity of the substrate due to the induced charge carriers provides an indication of the presence of the target electromagnetic radiation.

First claim

What is claimed is:

1. An image sensor comprising a plurality of sensor elements, at least one sensor element in the plurality of sensor elements comprising:
a substrate comprising a depletion region; and
at least one detector element disposed on the substrate, the at least one detector element comprising at least one resonator structure, the at least one resonator structure comprising at least two conductive structures separated by a spacing,
wherein the at least one sensor element is configured such that charge carriers are generated in a region of the substrate near the spacing based on an enhanced electric field induced in the spacing by a resonant response of the at least one resonator structure to a presence of target electromagnetic radiation;
wherein a thickness of the substrate is configured such that the charge carriers are generated in the depletion region when the image sensor is illuminated by the target electromagnetic radiation; and
wherein the image sensor is configured to measure a conductivity based on the generated charge carriers as an indication of the presence of the target electromagnetic radiation.

2. The image sensor of claim 1 , wherein at least one dimension of the at least one resonator structure is less than a wavelength of the target electromagnetic radiation.

3. The image sensor of claim 1 , wherein at least one dimension of the at least one resonator structure is substantially equal to or greater than a wavelength of the target electromagnetic radiation.

4. The image sensor of claim 1 , wherein the at least one resonator structure comprises a first conductive structure and a second conductive structure separated by the spacing, and wherein a portion of the first conductive structure and a portion of the second conductive structure near the spacing are parallel to each other.

5. The image sensor of claim 1 , wherein the at least one resonator structure is formed as a split-ring resonator structure, and wherein the split-ring resonator structure includes at least two spacings formed between corresponding pairs of the at least two conductive structures.

6. The image sensor of claim 1 , wherein the at least one resonator structure comprises a plurality of resonant structures arranged in an alternating interdigitated arrangement such that a portion of a first resonator structure in the plurality of resonator structures is disposed within a spacing of, and not in physical contact with, a second resonator structure in the plurality of resonator structures; and
wherein the portion of the first resonator structure is oriented in a direction parallel to a side of the second resonator structure neighboring the spacing.

7. The image sensor of claim 1 , wherein the at least one resonator structure is configured such that the apparatus detects the target electromagnetic radiation of different polarizations.

8. The image sensor of claim 1 , wherein each of the at least two conductive structures is configured in a wedge morphology.

9. The image sensor of claim 1 , wherein the at least one resonator structure comprises at least four conductive structures formed in a cross pattern separated by the spacing.

10. The image sensor of claim 1 , wherein the at least one resonator structure comprises a first conductive structure and a second conductive structure disposed on the substrate;
wherein a surface of the substrate comprising the first conductive structure and a second conductive structure lies in an y-z plane;
wherein the first conductive structure and the second conductive structure are aligned in a longitudinal antenna arrangement along a z-direction of the substrate; and
wherein the spacing separates an end of the first conductive structure from an end of the second conductive structure in the z-direction.

11. The image sensor of claim 1 , wherein the detector element further comprises:
a detector element substrate disposed between the substrate and the at least one resonator structure.

12. The image sensor of claim 11 , wherein the substrate comprises a first material and the detector element substrate comprises a second material different from the first material.

13. The image sensor of claim 1 , wherein the substrate comprises a semiconductor or a dielectric material.

14. The image sensor of claim 1 , wherein the at least one sensor element further comprises a circuit element including a readout circuitry disposed on a first side of the substrate,
wherein the at least one detector element is disposed on a second side of the substrate opposite the first side of the substrate.

15. The image sensor of claim 1 , wherein the at least one sensor element further comprises an anti-reflection coating layer disposed on the substrate.

16. The image sensor of claim 1 , wherein the plurality of sensor elements comprises a first sensor element comprising at least one first resonator structure and a second sensor element comprising at least one second resonator structure,
wherein a first dimension of the at least one first resonator structure is different from a second dimension of the at least one second resonator structure so as to facilitate spectroscopic sensing of the image sensor.

17. The image sensor of claim 1 , wherein the at least one sensor element comprises a first resonator structure and a second resonator structure,
wherein a first dimension of the first resonator structure is different from a second dimension of the second resonator structure so as to facilitate spectroscopic sensing of the image sensor.

18. The image sensor of claim 1 , wherein the at least one detector element further comprises a coupling structure disposed within the spacing, wherein the coupling structure is not in physical contact with the at least one resonator structure.

19. The image sensor of claim 1 , wherein the measure of the conductivity provides an indication of a magnitude, a polarization, or a spatial profile of the target electromagnetic radiation.

20. The image sensor of claim 1 , wherein the charge carriers are electron-hole pairs.

21. The image sensor of claim 20 , wherein the substrate is back-thinned, wherein the backthinning of the substrate causes the electron-hole pairs to be formed in the depletion region, and wherein a potential in the depletion region separates the electron-hole pairs, thereby facilitating measurement of the electron-hole pairs to provide an indication of the presence of the target electromagnetic radiation.

22. An image sensor comprising a plurality of sensor elements, at least one sensor element in the plurality of sensor elements comprising:
a semiconductor substrate comprising a depletion region;
at least one detector element disposed on a first side of the semiconductor substrate, the at least one detector element comprising at least one resonator structure, the at least one resonator structure comprising at least two conductive structures separated by a spacing; and
a circuit element disposed on a second side of the semiconductor substrate opposite the first side of the semiconductor substrate, the circuit element including a readout circuitry,
wherein the at least one sensor element is configured such that electron-hole pairs are generated in a region of the semiconductor substrate near the spacing based on an enhanced electric field induced in the spacing by a resonant response of the at least one resonator structure to a presence of target electromagnetic radiation;
wherein a distance between the depletion region and the

Assignees

• Massachusetts Inst Technology
• Univ Boston

Inventors

• Hwang Harold Y
• Liu Mengkun
• Averitt Richard D
• Nelson Keith A
• Sternbach Aaron
• Fan Kebin

Classifications

• H10F39/811

  Interconnections · CPC title

• H10F39/199

  Back-illuminated image sensors · CPC title

• H10F39/193

  Infrared image sensors · CPC title

• H10F30/10

  the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors · CPC title

• H01L31/09

  Electricity · mapped topic