Semiconductor light source apparatus

Patent metadata

Field	Value
Publication number	US-9366397-B2
Application number	US-201414157898-A
Country	US
Kind code	B2
Filing date	Jan 17, 2014
Priority date	Jan 18, 2013
Publication date	Jun 14, 2016
Grant date	Jun 14, 2016

Abstract

A semiconductor light source apparatus can emit various color lights having high brightness. The light source apparatus can include a phosphor layer directly disposed on a reflective layer and metallic bumps located between the reflective layer and a radiating substrate. The phosphor layer can be composed of at least one of a glass phosphor and a phosphor ceramic and can include at least one of a yellow phosphor, a red phosphor, a green phosphor and a blue phosphor. The light source can be located adjacent the phosphor layer so that light having high brightness emitted from the light source can be reflected on the reflective layer and heat of the phosphor layer can radiate from the radiating substrate via the metallic bumps. Thus, the disclosed subject matter can provide semiconductor light source apparatuses that can emit various color lights having high brightness, and which can be used for headlight, etc.

First claim

What is claimed is:

1. A semiconductor light source apparatus, comprising:
a radiating substrate having a mounting surface and a bottom surface located in an opposite direction of the mounting surface;
a phosphor layer having a top surface and a bottom surface being composed of at least one of a glass phosphor and a phosphor ceramic, and the top surface of the phosphor layer including a light incident region;
a reflective layer having a top surface and a bottom surface being composed of at least one of a metallic reflective layer and an dielectric multi-layer, the top surface of the reflective layer directly contacting with the bottom surface of the phosphor layer, the bottom surface of the reflective layer including a heat-radiating region, the heat-radiating region of the bottom surface of the reflective layer being located substantially under the light incident region of the top surface of the phosphor layer;
a plurality of metallic bumps being located between the mounting surface of the radiating substrate and the bottom surface of the reflective layer including the heat-radiating region, and thereby the phosphor layer being attached to the radiating substrate via the reflective layer; and
a semiconductor light source having an optical axis and a light-emitting area, the semiconductor light source located adjacent to the phosphor layer, the optical axis of the semiconductor light source intersecting with the light incident region of the top surface of the phosphor layer at an angle between 0 degrees and 90 degrees, the light-emitting area of the semiconductor light source substantially corresponding to the light incident region on the top surface of the phosphor layer to wavelength-convert light emitted from the semiconductor light source by the phosphor layer, and wherein the semiconductor light source apparatus is configured such that light emitted from the semiconductor light source travelling along the optical axis changes direction toward the phosphor layer after being reflected from the reflective layer.

2. The semiconductor light source apparatus according to claim 1 , wherein the plurality of metallic bumps is located between the mounting surface of the radiating substrate and only the heat-radiating region of the bottom surface of the reflective layer.

3. The semiconductor light source apparatus according to claim 1 , wherein a locating density of the metallic bumps on the heat-radiating region of the bottom surface of the reflective layer is the highest on the bottom surface of the reflective layer.

4. The semiconductor light source apparatus according to claim 1 , wherein the heat-radiating region of the bottom surface of the reflective layer is formed in at least one of a substantially circular shape having a maximum diameter of 1 millimeter, a substantially rectangular shape having a maximum side of 1 millimeter and a substantially ellipsoidal shape having a maximum length of the major axis of 1 millimeter.

5. The semiconductor light source apparatus according to claim 2 , wherein the heat-radiating region of the bottom surface of the reflective layer is formed in at least one of a substantially circular shape having a maximum diameter of 1 millimeter, a substantially rectangular shape having a maximum side of 1 millimeter and a substantially ellipsoidal shape having a maximum length of the major axis of 1 millimeter.

6. The semiconductor light source apparatus according to claim 1 , wherein each of the metallic bumps is formed in a substantially spherical shape having a maximum diameter of 100 micro meters, and each interval of the adjacent metallic bumps is in range from 50 percents to 200 percents in the maximum diameter of the substantially spherical shape.

7. The semiconductor light source apparatus according to claim 2 , wherein each of the metallic bumps is formed in a substantially spherical shape having a maximum diameter of 100 micro meters, and each interval of the adjacent metallic bumps is in range from 50 percents to 200 percents in the maximum diameter of the substantially spherical shape.

8. The semiconductor light source apparatus according to claim 1 , wherein each of the metallic bumps includes at least one of gold, silver, copper, tin and lead.

9. The semiconductor light source apparatus according to claim 2 , wherein each of the metallic bumps includes at least one of gold, silver, copper, tin and lead.

10. The semiconductor light source apparatus according to claim 1 , wherein the phosphor layer consists essentially of at least one of a glass phosphor and a phosphor ceramic which includes substantially no resin component.

11. The semiconductor light source apparatus according to claim 2 , wherein the phosphor layer consists essentially of at least one of a glass phosphor and a phosphor ceramic which includes substantially no resin component.

12. The semiconductor light source apparatus according to claim 1 , further comprising:
an encapsulating resin being disposed between the radiating substrate and the reflective layer while surrounding each of the metallic bumps, and wherein the encapsulating resin includes at least one of a transparent silicone resin, a white silicon resin and a transparent glass.

13. The semiconductor light source apparatus according to claim 2 , further comprising:
an encapsulating resin being disposed between the radiating substrate and the reflective layer while surrounding each of the metallic bumps, and wherein the encapsulating resin includes at least one of a transparent silicone resin, a white silicon resin and a transparent glass.

14. The semiconductor light source apparatus according to claim 1 , wherein the metallic reflective layer of the reflective layer includes at least one of silver, platinum, gold, copper, titanium and silicon, and the dielectric multi-layer of the reflective layer includes at least one of SiO 2 , Al 2 O 3 , TiO 2 and ZnO.

15. The semiconductor light source apparatus according to claim 2 , wherein the metallic reflective layer of the reflective layer includes at least one of silver, platinum, gold, copper, titanium and silicon, and the dielectric multi-layer of the reflective layer includes at least one of SiO 2 , Al 2 O 3 , TiO 2 and ZnO.

16. The semiconductor light source apparatus according to claim 1 , further comprising:
a heat sink fin extending in an opposite direction of the metallic bumps from the bottom surface of the radiating substrate.

17. The semiconductor light source apparatus according to claim 2 , further comprising:
a heat sink fin extending in an opposite direction of the metallic bumps from the bottom surface of the radiating substrate.

18. The semiconductor light source apparatus according to claim 1 , wherein the semiconductor light source is a blue light-emitting device and the phosphor layer is one of a yellow phosphor glass and a yellow phosphor ceramic.

19. The semiconductor light source apparatus according to claim 1 , wherein the semiconductor light source is a blue light-emitting device and the phosphor layer is one of a phosphor glass and a phosphor ceramic, which include two phosphors of a red phosphor and a green phosphor.

20. The semiconductor light source apparatus according to claim 1 , wherein the semiconductor light source is an ultraviolet light-emitting device and the phosphor layer includes at least one of a red phosphor, a green phosphor and a blue phosphor.

Assignees

• Stanley Electric Co Ltd

Inventors

• Owada Soji

Classifications

• F21S45/47

  Passive cooling, e.g. using fins, thermal conductive elements or openings · CPC title

• F21K9/64 Primary

  using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer · CPC title

• F21S41/192

  Details of lamp holders, terminals or connectors · CPC title

• F21Y2115/10

  Light-emitting diodes [LED] · CPC title

• F21S41/16

  Laser light sources · CPC title