Method of forming a fine pattern

Patent metadata

Field	Value
Publication number	US-9365933-B2
Application number	US-201514718127-A
Country	US
Kind code	B2
Filing date	May 21, 2015
Priority date	Nov 19, 2014
Publication date	Jun 14, 2016
Grant date	Jun 14, 2016

Abstract

A method of forming a fine pattern includes providing a first metal layer on a base substrate, providing a first passivation layer on the first metal layer, providing a mask pattern on the first passivation layer, providing a partitioning wall pattern having a reverse taper shape by etching the first passivation layer, coating a composition having a block copolymer between the partitioning wall patterns adjacent each other, providing a self-aligned pattern by heating the composition, and providing a metal pattern by etching the first metal layer using the self-aligned pattern as a mask.

First claim

What is claimed is:

1. A method of forming a fine pattern, the method comprising:
forming a first metal layer on a substrate;
forming a first passivation layer on the first metal layer;
forming a mask pattern on the first passivation layer;
etching the first passivation layer to form a partitioning wall pattern having a reverse taper shape;
coating the first metal layer in an area between the partitioning wall patterns adjacent each other with a composition comprising a block copolymer;
heating the composition, the heating transforming the composition into a self-aligned pattern; and
etching the first metal layer using the self-aligned pattern as a mask to form a metal pattern.

2. The method of claim 1 , wherein the first metal layer comprises aluminum or an alloy of aluminum.

3. The method of claim 1 , wherein the partitioning wall pattern forms a reverse tapered angle with the first metal layer greater than or equal to 45° and less than or equal to 90°.

4. The method of claim 1 , wherein the block copolymer is at least one selected from the group consisting of a block copolymer of styrene and methymethacrlate (PS-b-PMMA), a block copolymer of styrene and 4-(tetra-butyldimethylsilyl)oxystyrene (PS-b-PSSi), a block copolymer of styrene and dimethylsiloxane (PS-b-PDMS) and a block copolymer of styrene and vinylpyrrolidone (PS-b-PVP).

5. The method of claim 1 , wherein weight-average molecular weight of the block copolymer is 3,000 to 1,000,000.

6. The method of claim 1 , wherein the composition comprising the block copolymer further comprises a solvent.

7. The method of claim 6 , wherein the composition comprises about 0.5 wt % to 20 wt % block copolymer.

8. The method of claim 6 , wherein the solvent is at least one selected from the group consisting of toluene, xylene, propylene glycol mono-methyl ether aceate (PGMEA), propylene glycol mono-methyl ether (PGME), cyclohexanone, and ethylactate.

9. The method of claim 1 , wherein the composition is heated over glass to a transition temperature.

10. The method of claim 9 , wherein the composition is heated to between 200° C. and 300° C.

11. The method of claim 1 , wherein the self-aligned pattern comprises:
first nano patterns; and
second nano patterns disposed between the first nano patterns.

12. The method of claim 1 , wherein the first nano patterns and the second nano patterns each have a different etching selectivity.

13. The method of claim 1 , further comprising etching a portion of the self-aligned pattern by oxygen plasma treatment.

14. A method of forming a fine pattern, the method comprising:
forming a first metal layer on a substrate;
forming a first passivation layer on the first metal layer;
forming a second metal layer on the first passivation layer;
forming a second passivation layer on the second metal layer;
forming a mask pattern on the second passivation layer;
etching the second passivation layer to form a passivation pattern;
providing a preliminary partitioning wall pattern at a side of the passivation pattern;
etching the second metal layer and the first passivation layer using the preliminary partitioning wall pattern as a mask to form a partitioning wall pattern having a reverse taper shape;
coating the first metal layer in an area between the partitioning wall patterns adjacent each other with a composition comprising a block copolymer;
providing a self-aligned pattern by heating the composition;
etching a portion of the self-aligned pattern;
providing a metal pattern by etching the first metal layer using the self-aligned pattern as a mask.

15. The method of claim 14 , wherein the first metal layer comprises aluminum or an alloy of aluminum.

16. The method of claim 14 , wherein the partitioning wall pattern forms a reverse tapered angle with the first metal layer greater than or equal to 45° and less than or equal to 90°.

17. The method of claim 14 , wherein the block copolymer is at least one selected from the group consisting of a block copolymer of styrene and methymethacrlate (PS-b-PMMA), a block copolymer of styrene and 4-(tetra-butyldimethylsilyl)oxystyrene (PS-b-PSSi), a block copolymer of styrene and dimethylsiloxane (PS-b-PDMS) and a block copolymer of styrene and vinylpyrrolidone (PS-b-PVP).

18. The method of claim 14 , wherein the composition is heated to between 200° C. and 300° C.

19. The method of claim 14 , wherein the self-aligned pattern comprises:
first nano patterns; and
second nano patterns disposed between the first nano patterns.

20. The method of claim 19 , wherein the first nano patterns and the second nano patterns each have a different etching selectivity.

Assignees

• Samsung Display Co Ltd

Inventors

• Son Jung-Ha
• Bae Su-Bin
• Jeong Yu-Gwang
• Xie Lei
• Yeo Yun-Jong
• Lee Joo-Hyung

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• H01L21/0337

  Electricity · mapped topic

• C23F1/02 Primary

  Local etching · CPC title