Cleaning liquid for semiconductor device substrates and method of cleaning substrate for semiconductor devices

US9365802B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9365802-B2
Application numberUS-201313780544-A
CountryUS
Kind codeB2
Filing dateFeb 28, 2013
Priority dateAug 31, 2010
Publication dateJun 14, 2016
Grant dateJun 14, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The invention relates to a cleaning liquid for semiconductor device substrates comprising the following components (A) to (D) and a method of cleaning semiconductor device substrates: (A) at least either one of a polycarboxylic acid and a hydroxycarboxylic acid; (B) a sulfonic acid type anionic surfactant; (C) a carboxylic acid type anionic surfactant; and (D) water.

First claim

Opening claim text (preview).

The invention claimed is: 1. A cleaning liquid, comprising components (A) to (D): (A) at least one of a polycarboxylic acid and a hydroxycarboxylic acid; (B) a sulfonic acid type anionic surfactant; (C) a carboxylic acid type anionic surfactant; and (D) water; wherein: component (C) is a compound of formula (1) or a salt thereof: R—O-(AO) m —(CH 2 ) n —COOH  (1) R is a linear or branched alkyl group having 5 to 20 carbon atoms; AO is at least one of an oxyethylene group and an oxypropylene group; m is 3 to 30; and n is 1 to 6. 2. The cleaning liquid according to claim 1 , wherein component (A) is a compound that has two or more carboxyl groups and one or more hydroxy groups. 3. The cleaning liquid according to claim 1 , wherein component (A) is a compound having 2 to 10 carbon atoms. 4. The cleaning liquid according to claim 1 , wherein component (A) is at least one member selected from the group consisting of citric acid, tartaric acid, malic acid, and lactic acid. 5. The cleaning liquid according to claim 1 , wherein component (B) is at least one member selected from the group consisting of an alkylsulfonic acid, a salt of an alkylsulfonic acid, an alkylbenzenesulfonic acid, a salt of an alkylbenzenesulfonic acid, an alkyldiphenyl ether disulfonic acid, a salt of an alkyldiphenyl ether disulfonic acid, an alkylmethyltauric acid, a salt of an alkylmethyltauric acid, a sulfosuccinic acid diester, and a salt of a sulfosuccinic acid diester. 6. The cleaning liquid according to claim 1 , wherein: a content of component (A) is 5 to 30% by mass; a content of component (B) is 0.01 to 10% by mass; and a content of component (C) is 0.01 to 10% by mass. 7. The cleaning liquid according to claim 1 , wherein: a content of component (A) is 0.03 to 3% by mass; a content of component (B) is 0.0001 to 1% by mass; and a content of component (C) is 0.0001 to 1% by mass. 8. The cleaning liquid according to claim 1 , wherein a mass ratio of component (B) to component (C) [component (B)/component (C)] is in a range of 1/15 to 1.5/1. 9. The cleaning liquid according to claim 1 , wherein, when colloidal silica having a primary-particle diameter of 80 nm is added to the cleaning liquid and the cleaning liquid is diluted to a water/cleaning liquid ratio of 40 by mass, the cleaning liquid has a zeta potential of −30 my or lower. 10. A method of cleaning a substrate for a semiconductor device, comprising: applying the cleaning liquid according to claim 1 to the substrate. 11. The method of cleaning a substrate for a semiconductor device according to claim 10 , wherein: the substrate comprises Cu wiring and a low-dielectric constant insulating film on a substrate surface; and the substrate is a substrate that has been subjected to chemical mechanical polishing. 12. The cleaning liquid according to claim 1 , wherein the compound of general formula (1) is a polyoxyethylene alkyl ether acetic acid.

Assignees

Inventors

Classifications

  • the processing being a planarisation of conductive layers · CPC title

  • C11D1/37Primary

    Mixtures of compounds all of which are anionic · CPC title

  • C11D1/04Primary

    Carboxylic acids or salts thereof (soap C11D9/00) · CPC title

  • in liquid compositions · CPC title

  • Hydroxy carboxylic acids-salts thereof · CPC title

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Frequently asked questions

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What does patent US9365802B2 cover?
The invention relates to a cleaning liquid for semiconductor device substrates comprising the following components (A) to (D) and a method of cleaning semiconductor device substrates: (A) at least either one of a polycarboxylic acid and a hydroxycarboxylic acid; (B) a sulfonic acid type anionic surfactant; (C) a carboxylic acid type anionic surfactant; and (D) water.
Who is the assignee on this patent?
Mitsubishi Chem Corp
What technology area does this patent fall under?
Primary CPC classification C11D1/37. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jun 14 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).