Chemically amplified positive resist composition and resist pattern forming process
US-12164231-B2 · Dec 10, 2024 · US
US9365505B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9365505-B2 |
| Application number | US-201314381746-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 13, 2013 |
| Priority date | Jul 15, 2013 |
| Publication date | Jun 14, 2016 |
| Grant date | Jun 14, 2016 |
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A photoresist monomer, a photoresist and a method for the preparation thereof, a color filter. The photoresist monomer has a structure represented by Formula I, wherein, R 1 is hydrogen or methyl; R 2 is hydrogen, methyl, ethyl, or propyl; R 3 is hydrogen or C 1-6 alkyl; and n is from 1 to 4. The resulting photoresist exhibits a compact and smooth surface and a gentle angle of slope.
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The invention claimed is: 1. A photoresist monomer having a structure represented by Formula I, wherein, R 1 is hydrogen or methyl; R 2 is hydrogen, methyl, ethyl, or propyl; R 3 is hydrogen or C 1-6 alkyl; and n is from 1 to 4, wherein, in Formula I, m 1 , m 2 , and m 3 are in the range of 50-400. 2. A photoresist comprising the photoresist monomer of claim 1 , or a mixture of photoresist monomers. 3. The photoresist according to claim 2 , wherein, said photoresist further comprises an alkaline soluble resin, a pigment dispersion, a photoinitiator, a solvent, and an adjuvant; said photoresist comprising, in part by weight, photoresist monomer or a mixture of photoresist monomers: 11.2-21.2 parts; alkaline soluble resin: 7.4-19.8 parts; pigment dispersion: 35.2-57.6 parts; photoinitiator: 1.8-11.9 parts; solvent: 11.26-28.5 parts; and adjuvant: 0.07-0.21 part. 4. The photoresist according to claim 3 , wherein, the mixture of the photoresist monomers comprises photoresist monomers A, B, and C, wherein, the photoresist monomer A has a structure of Formula I in which n is 1, and is in 1 part by weight; the photoresist monomer B has a structure of Formula I in which n is 2, and is in 2.3-4.3 parts by weight; and the photoresist monomer C has a structure of Formula I in which n is 3, and is in 5.1-5.7 parts by weight. 5. The photoresist according to claim 3 , wherein, the mixture of the photoresist monomers comprises photoresist monomers A, B, and D, wherein, the photoresist monomer A has a structure of Formula I in which n is 1, and is in 1 part by weight; the photoresist monomer B has a structure of Formula I in which n is 2, and is in 2.7-3.5 parts by weight; and the photoresist monomer D has a structure of Formula I in which n is 4, and is in 3.3-5.5 parts by weight. 6. The photoresist according to claim 3 , wherein, the mixture of the photoresist monomers comprises photoresist monomers B, C, and D, wherein, the photoresist monomer B has a structure of Formula I in which n is 2, and is in 1 part by weight; the photoresist monomer C has a structure of Formula I in which n is 3, and is in 2.3-3.1 parts by weight; and the photoresist monomer D has a structure of Formula I in which n is 4, and is in 4.7-7.5 parts by weight. 7. The photoresist according to claim 2 , wherein, the mixture of the photoresist monomers comprises photoresist monomers A, B, and C, wherein, the photoresist monomer A has a structure of Formula I in which n is 1, and is in 1 part by weight; the photoresist monomer B has a structure of Formula I in which n is 2, and is in 2.3-4.3 parts by weight; and the photoresist monomer C has a structure of Formula I in which n is 3, and is in 5.1-5.7 parts by weight. 8. The photoresist according to claim 2 , wherein, the mixture of the photoresist monomers comprises photoresist monomers A, B and D, wherein, the photoresist monomer A has a structure of Formula I in which n is 1, and is n 1 part by weight; the photoresist monomer B has a structure of Formula I in which n is 2, is 2.7-3.5 parts by weight; and the photoresist monomer D has a structure of Formula I in which n is 4, and is an 3.3-5.5 parts by weight. 9. The photoresist according to claim 2 , wherein, the mixture of the photoresist monomers comprises photoresist monomers B, C, and D, wherein, the photoresist monomer B has a structure of Formula I in which n is 2, and is in 1 part by weight; the photoresist monomer C has a structure of Formula I in which n is 3, and is in 2.3-3.1 parts by weight; and the photoresist monomer D has a structure of Formula I in which n is 4, and is in 4.7-7.5 parts by weight. 10. A color filter, comprising: a substrate; a black matrix provided on the substrate; and a color filter lap-jointly provided on the black matrix, said color filter being formed by the photoresist of claim 2 . 11. A method for preparing the photoresist of claim 2 , comprising: Step Q1: mixing a photoinitiator, a solvent, and an adjuvant with stirring, until the photoinitiator is dissolved; Step Q2: adding a mixture of an alkaline soluble resin, and a photoresist monomer or a mixture of photoresist monomers to the mixed solution from step Q1, and stirring the mixture to a transparent state; Step Q3: adding a pigment dispersion to the mixture from step Q2, to produce the photoresist. 12. A method for preparing a photoresist monomer is provided, which comprises: (1) reacting polyether polyol as shown by Formula II with R 3 -substituted benzenesulfonyl chloride as shown by Formula III in a proper solvent, to generate R 3 -substituted benzenesulfonyl chloride-modified polyether polyol as shown by Formula IV; (2) reacting R 3 -substituted benzenesulfonyl chloride-modified polyether polyol as shown by Formula IV with R 2 -substituted acryloyl chloride as shown by Formula V in a proper solvent in the presence of a catalyst, to generate the photoresist monomer having a structure represented by Formula I, wherein, R 1 is hydrogen or methyl; R 2 is hydrogen, methyl, ethyl, or propyl; R 3 is hydrogen or C 1-6 alkyl; and n is from 1 to 4, wherein, in Formula I, m 1 , m 2 , and m 3 are in the range of 50-400. 13. The method according to claim 12 , wherein, polyether polyol, R 3 -substituted benzenesulfonyl chloride, and the solvent in step (1) are, in parts by weight: polyether polyol: 2 parts; R 3 -substituted benzenesulfonyl chloride: 0.7-0.9 part; solvent; 100-160 parts. 14. The method according to claim 12 , wherein, R 3 -substituted benzenesulfonyl chloride-modified polyether polyol, R 2 -substituted acryloyl chloride, the solvent, and the catalyst in step (2) are, in parts by weight: R 3 -substituted benzenesulfonyl chloride-modified polyether polyol: 1 part; R 2 -substituted acryloyl chloride: 2.3-6.1 parts; solvent: 45-135 parts; catalyst: 0.0145-0.035 part.
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