Integrated circuit configured with two or more single crystal acoustic resonator devices

Patent metadata

Field	Value
Publication number	US-9362887-B2
Application number	US-201514796939-A
Country	US
Kind code	B2
Filing date	Jul 10, 2015
Priority date	Jun 6, 2014
Publication date	Jun 7, 2016
Grant date	Jun 7, 2016

Abstract

A configurable single crystal acoustic resonator (SCAR) device integrated circuit. The circuit comprises a plurality of SCAR devices numbered from 1 through N, where N is an integer of 2 and greater. Each of the SCAR device has a thickness of single crystal piezo material formed overlying a surface region of a substrate member. The single crystal piezo material is characterized by a dislocation density of less than 10 12 defects/cm 2 .

First claim

What is claimed is:

1. A monolithic filter ladder network comprising:
a plurality of single crystal acoustic resonator devices, numbered from (R 1 ) to (RN), where N is an integer greater than 1, configured on a common substrate member, each of the acoustic resonator device comprising:
a bulk substrate structure, having a surface region, and a thickness of material, the bulk substrate structure having a first recessed region and a second recessed region, and a support member disposed between the first recessed region and the second recessed region, the bulk substrate structure being made of a material that is one of a gallium nitride (GaN), silicon carbide (SiC), silicon (Si), sapphire (Al2O3), aluminum nitride (AlN), or combinations thereof;
a thickness of single crystal piezo material formed overlying the surface region, the thickness of single crystal piezo material having an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region, the single crystal piezo material having a thickness of greater than 0.4 microns, the single crystal piezo material being characterized by a dislocation density of less than 10 12 defects/cm 2 ;
a first electrode member formed overlying an upper portion of the thickness of single crystal piezo material;
a second electrode member formed overlying a lower portion of the thickness of single crystal piezo material to sandwich the thickness of single crystal piezo material with the first electrode member and the second electrode member, the second electrode member extending from the lower portion that includes the exposed backside region to the contact region;
a second electrode structure electrically coupled to the second electrode member at the contact region;
a first electrode structure electrically coupled with the first electrode member;
a dielectric material overlying an upper surface region of a resulting structure overlying the bulk substrate member; and
an acoustic reflector structure configured overlying the first electrode member, the upper portion, the lower portion, and the second electrode member.

2. The device of claim 1 wherein the support member is configured in a plane coincident with a bottom surface region of the bulk substrate structure.

3. The device of claim 1 wherein the support member is configured in a plane off-set and recessed in reference to a bottom surface region of the bulk substrate structure, but protruding in reference to the first and second recessed regions.

4. The device of claim 1 wherein the single crystal piezo material being characterized by X-ray diffraction with clear peak at a detector angle (2-Theta) associated with single crystal film and whose Full Width Half Maximum (FWHM) is measured to be less than 1.0°.

5. The device of claim 1 wherein N is equal to at least 7, and (R 1 ), (R 3 ), (R 5 ), and (R 7 ) are configured in a serial manner such that the second electrode structure of (R 1 ) is coupled to the first electrode structure of (R 3 ) and the second electrode structure of (R 3 ) is coupled to the first electrode structure of (R 5 ) and the second electrode structure of (R 5 ) is coupled to the first electrode structure of (R 7 ); and further comprising a first node configured between the second electrode structure of (R 1 ) and the first electrode structure of (R 3 ); a second node is configured between the second electrode structure of (R 3 ) and the first electrode structure of (R 5 ); and a third node is configured between the second electrode structure of (R 5 ) and the first electrode structure of (R 7 ).

6. The device of claim 1 wherein N is equal to at least 7, and (R 1 ), (R 3 ), (R 5 ), and (R 7 ) are configured in a serial manner such that the second electrode structure of (R 1 ) is coupled to the first electrode structure of (R 3 ) and the second electrode structure of (R 3 ) is coupled to the first electrode structure of (R 5 ) and the second electrode structure of (R 5 ) is coupled to the first electrode structure of (R 7 ); and further comprising a first node configured between the second electrode structure of (R 1 ) and the first electrode structure of (R 3 ); a second node is configured between the second electrode structure of (R 3 ) and the first electrode structure of (R 5 ); and a third node is configured between the second electrode structure of (R 5 ) and the first electrode structure of (R 7 ); and wherein (R 2 ) is configured between the first node and a lower common electrode; (R 4 ) is configured between the second node and the lower common electrode; and (R 6 ) is configured between the third node and the lower common electrode.

7. The device of claim 1 wherein N is equal to at least 7 and (R 1 ), (R 3 ), (R 5 ), and (R 7 ) are configured in a serial manner such that the second electrode structure of R 1 is coupled to the first electrode structure of (R 3 ) and the second electrode structure of (R 3 ) is coupled to the first electrode structure of (R 5 ) and the second electrode structure of (R 5 ) is coupled to the first electrode structure of (R 7 ); and further comprising a first node configured between the second electrode structure of (R 1 ) and the first electrode structure of (R 3 ); a second node is configured between the second electrode structure of (R 3 ) and the first electrode structure of (R 5 ); and a third node is configured between the second electrode structure of (R 5 ) and the first electrode structure of (R 7 ); and wherein (R 2 ) is configured between the first node and a lower common electrode such that the first electrode structure of (R 2 ) is connected to the first node and the second electrode structure of (R 2 ) is connected to the lower common electrode; (R 4 ) is configured between the second node and the lower common electrode such that the first electrode structure is connected to the second node and the second electrode structure is connected to the lower common electrode; and (R 6 ) is configured between the third node and the lower common electrode such that the first electrode structure of (R 6 ) is connected to the third node and the second electrode structure of (R 6 ) is connected to the lower common electrode.

8. The device of claim 1 wherein N is equal to at least 7 and (R 1 ), (R 2 ), and (R 3 ) are configured to share a first common node; wherein (R 3 ), (R 4 ), and (R 5 ) are configured to share a second common node; wherein (R 5 ), (R 6 ), and (R 7 ) are configured to share a third common node; and wherein (R 2 ), (R 4 ), and (R 6 ) are configured to share a fourth common node.

9. The device of claim 1 wherein at least one of the plurality of acoustic resonator devices including (R 1 ), (R 2 ), (R 3 ), (R 4 ), (R 5 ), (R 6 ), or (R 7 ) comprises a via structure electrically coupled to the contact region.

10. The device of claim 1 wherein N is equal to at least 7 and (R 1 ), (R 2 ), and (R 3 ) are configured to share a first common node; wherein (R 3 ), (R 4 ), and (R 5 ) are configured to share a second common node; wherein (R 5 ), (R 6 ), and (R 7 ) are configured to share a third common node; and wherein (R 2 ), (R 4 ), and (R 6 ) are configured to share a fourth common node; and (R 4 ) is configured with a via structure coupled to the fourth common node.

11. The device of claim 1 wherein the thickness of single crystal piezo material selected from at least one of AlN, AlGaN, InN, BN, or other group III nitrides.

12. The device of claim 1 wherein the thickness of single crystal piezo material is selected from at least one of a single crystal oxide including a high K dielectric, ZnO, or MgO.

13. The device of claim 1 wherein the ea

Assignees

• Akoustis Inc

Inventors

• Shealy Jeffrey B

Classifications

• H03H9/568

  consisting of a ladder configuration · CPC title

• H03H9/174

  Membranes · CPC title

• H03H9/02015 Primary

  Characteristics of piezoelectric layers, e.g. cutting angles · CPC title

• H03H9/0542

  consisting of a lateral arrangement (H03H9/0566 takes precedence) · CPC title

• H03H9/605

  consisting of a ladder configuration · CPC title