Electronic device insulating layer material capable of forming an insulating layer at low temperature

Patent metadata

Field	Value
Publication number	US-9362512-B2
Application number	US-201214364376-A
Country	US
Kind code	B2
Filing date	Dec 12, 2012
Priority date	Dec 21, 2011
Publication date	Jun 7, 2016
Grant date	Jun 7, 2016

Abstract

Insulating layer material comprising: polymer compound of a repeating unit containing a cyclic ether structure and a repeating unit of the formula:

wherein R 5 represents a hydrogen atom or a methyl group; R b b represents a linking moiety which links the main chain of the polymer compound with a side chain of the polymer compound and optionally has a fluorine atom; R represents an organic group capable of being detached by an acid; R′ represents a hydrogen atom or a monovalent organic group having from 1 to 20 carbon atoms and optionally having a fluorine atom; the suffix b represents an integer of 0 or 1, and the suffix n represents an integer of from 1 to 5; when there are two or more Rs, they may be the same or different; and when there are two or more R's, they may be the same or different; and tungsten (V) alkoxide.

First claim

The invention claimed is:

1. An electronic device insulating layer material comprising:
a polymer compound (A) which contains a repeating unit containing a cyclic ether structure and a repeating unit represented by the formula (1):

wherein R 5 represents a hydrogen atom or a methyl group; R bb represents a linking moiety which links the main chain of the polymer compound with a side chain of the polymer compound and optionally has a fluorine atom; R represents an organic group capable of being detached by an acid; R′ represents a hydrogen atom or a monovalent organic group having from 1 to 20 carbon atoms and optionally having a fluorine atom; the suffix b represents an integer of 0 or 1, and the suffix n represents an integer of from 1 to 5; when there are two or more Rs, they may be the same or different; and when there are two or more R′s, they may be the same or different; and
tungsten (V) alkoxide (B).

2. The electronic device insulating layer material according to claim 1 , wherein the repeating unit having a cyclic ether structure is at least one repeating unit selected from the group consisting of a repeating unit represented by the formula (2):

wherein R 1 represents a hydrogen atom or a methyl group; R 2 , R 3 and R 4 each independently represent a hydrogen atom or a monovalent organic group having from 1 to 20 carbon atoms and optionally having a fluorine atom; R aa represents a linking moiety which links the main chain of the polymer compound with a side chain of the polymer compound, and optionally has a fluorine atom; and the suffix a represents an integer of 0 or 1, and
a repeating unit represented by the formula (3):

wherein R 12 represents a hydrogen atom or a methyl group; R 13 ,R 14 ,R 15 ,R 16 and R 17 each independently represent a hydrogen atom or a monovalent organic group having from 1 to 20 carbon atoms and optionally having a fluorine atom; R dd represents a linking moiety which links the main chain of the polymer compound with a side chain of the polymer compound, and optionally has a fluorine atom; and the suffix d represents an integer of 0 or 1.

3. The electronic device insulating layer material according to claim 1 , wherein the polymer compound (A) is a polymer compound further containing a repeating unit containing the following first functional group:
first functional group: a functional group capable of affording, by the action of electromagnetic waves or heat, a second functional group capable of reacting with active hydrogen.

4. The electronic device insulating layer material according to claim 3 , wherein the first functional group is at least one group selected from the group consisting of an isocyanato group blocked with a blocking agent and an isothiocyanato group blocked with a blocking agent.

5. The electronic device insulating layer material according to claim 4 , wherein the isocyanato group blocked with a blocking agent and the isothiocyanato group blocked with a blocking agent are groups represented by the formula (5):

wherein X a represents an oxygen atom or a sulfur atom, and R 7 and R 8 each independently represent a hydrogen atom or a monovalent organic group having from 1 to 20 carbon atoms.

6. The electronic device insulating layer material according to claim 4 , wherein the isocyanato group blocked with a blocking agent and the isothiocyanato group blocked with a blocking agent are groups represented by the formula (6):

wherein X b represents an oxygen atom or a sulfur atom, and R 9 , R 10 and R 11 each independently represent a hydrogen atom or a monovalent organic group having from 1 to 20 carbon atoms.

7. The electronic device insulating layer material according to claim 1 , wherein the polymer compound (A) is a polymer compound further containing a repeating unit represented by the formula (4):

wherein R 6 represents a hydrogen atom or a methyl group; R f represents a fluorine atom or a monovalent organic group having from 1 to 20 carbon atoms and optionally having a fluorine atom; R CC represents a linking moiety which links the main chain of the polymer compound with a side chain of the polymer compound, and optionally has a fluorine atom; the suffix c represents an integer of 0 or 1, and the suffix m represents an integer of from 1 to 5; and when there are two or more R f s, they may be the same or different, provided that at least one R f is a fluorine atom or a monovalent organic group having from 1 to 20 carbon atoms and having a fluorine atom.

8. The electronic device insulating layer material according to claim 1 , which is an organic thin film transistor insulating layer material.

9. A method for forming an electronic device insulating layer comprising the steps of:
applying a solution containing an electronic device insulating layer material comprising:
a polymer compound (A) which contains a repeating unit containing a cyclic ether structure and a repeating unit represented by the formula (1):

wherein R 5 represents a hydrogen atom or a methyl group; R bb represents a linking moiety which links the main chain of the polymer compound with a side chain of the polymer compound and optionally has a fluorine atom; R represents an organic group capable of being detached by an acid; R′ represents a hydrogen atom or a monovalent organic group having from 1 to 20 carbon atoms and optionally having a fluorine atom; the suffix b represents an integer of 0 or 1, and the suffix n represents an integer of from 1 to 5; when there are two or more Rs, they may be the same or different; and when there are two or more R's, they may be the same or different; and
tungsten (V) alkoxide (B),
onto a substrate material to form an applied layer on the substrate material; and
applying heat to the applied layer.

10. An electronic device having an electronic device insulating layer formed by using an electronic device insulating layer material comprising:
a polymer compound (A) which contains a repeating unit containing a cyclic ether structure and a repeating unit represented by the formula (1):

wherein R 5 represents a hydrogen atom or a methyl group; R bb represents a linking moiety which links the main chain of the polymer compound with a side chain of the polymer compound and optionally has a fluorine atom; R represents an organic group capable of being detached by an acid; R′ represents a hydrogen atom or a monovalent organic group having from 1 to 20 carbon atoms and optionally having a fluorine atom; the suffix b represents an integer of 0 or 1 and the suffix n represents an integer of from 1 to 5; when there are two or more Rs they may be the same or different; and when there are two or more R's, they may be the same or different; and
tungsten (V) alkoxide (B).

11. The electronic device acco

Assignees

• Sumitomo Chemical Co

Inventors

• Yahagi Isao

Classifications

• C08F212/22

  Oxygen · CPC title

• H01B3/447

  from acrylic compounds · CPC title

• H01B3/448

  from other vinyl compounds · CPC title

• C08F12/22

  Oxygen · CPC title

• H01B3/442 Primary

  from aromatic vinyl compounds · CPC title