Engineering of an ultra-thin molecular superconductor by charge transfer

Patent metadata

Field	Value
Publication number	US-9362476-B2
Application number	US-201213593592-A
Country	US
Kind code	B2
Filing date	Aug 24, 2012
Priority date	Mar 26, 2010
Publication date	Jun 7, 2016
Grant date	Jun 7, 2016

Abstract

A method of forming a superconductive device of a single layer of (BETS) 2 GaCl 4 molecules on a substrate surface which displays a superconducting gap that increases exponentially with the length of the molecular chain is provided.

First claim

What is claimed is:

1. A method of forming a superconductive article comprising a single sheet of a molecular superconductor material wherein the method comprises:
a) preparing a source of single crystals of the superconductor material, said source comprising single crystals of said superconductor material;
b) preparing a single crystal substrate; and
c) depositing the single sheet of superconductor material from the source by vacuum deposition to the substrate, wherein the substrate comprises a metal substrate and wherein the substrate comprises Ag (111).

2. The method of claim 1 , wherein the single crystals of superconductor material comprise λ-(BETS) 2 GaCl 4 .

3. The method of claim 2 , wherein the superconducting gap increases exponentially with the length of molecular chain formed by the λ-(BETS) 2 GaCl 4 molecules.

4. The method of claim 1 , wherein the single sheet of molecular superconductor comprises a nanolayer.

5. The method of claim 4 , wherein the nanolayer has a thickness of about 0.7 nm.

6. The method of claim 1 , wherein the crystals of superconductor material are deposited at a temperature of about 120K.

7. The method of claim 1 , wherein the source of superconductor material is heated to a temperature of about 160° C.

8. The method of claim 1 , wherein the source is placed about 20 cm from the substrate.

9. The method of claim 1 , wherein the superconductive article comprises one or more of a superconductive film or wire.

10. The method of claim 1 , wherein depositing includes heating the source to evaporate the single crystals.

11. A method of forming a superconductive layer comprising:
providing a single crystal substrate;
providing a source of BETS molecules in powder form;
depositing BETS molecules by heating the source between about 160° C. and about 180° C., with the substrate being positioned about 20 cm from the source molecules;
depositing GaCl 4 molecules;
depositing a second deposition of BETS molecules;
heating the substrate to about 200° C. to obtain a single sheet of a superconductive layer.

12. The method of claim 11 , wherein the single sheet comprises a nanolayer.

13. The method of claim 11 , wherein the depositing is by vacuum deposition.

14. A method of forming an organic BETS 2 A-type superconductor comprising:
evaporating a first material comprising BETS molecules to evaporate the BETS molecules;
depositing the evaporated BETS molecules onto a single crystal substrate;
evaporating a second material comprising A molecules;
depositing the evaporated A molecules onto the deposited BETS molecules;
depositing the BETS molecules onto the deposited A molecules; and
heating the substrate to obtain the organic BETS 2 A-type superconductor.

15. The method of claim 14 , wherein the first material is in powder form.

16. The method of claim 14 , wherein the A molecules are molecules of GaCl 4 so as to produce a λ-(BETS) 2 GaCl 4 superconductor.

17. A method of forming a superconductive article comprising a single sheet of a molecular superconductor material wherein the method comprises:
a) preparing a source of single crystals of the superconductor material, said source comprising single crystals of said superconductor material;
b) preparing a single crystal substrate; and
c) depositing the single sheet of superconductor material from the source by vacuum deposition to the substrate, wherein the single crystals of superconductor material comprise λ-(BETS) 2 GaCl 4 .

18. A method of forming a superconductive article comprising a single sheet of a molecular superconductor material wherein the method comprises:
a) preparing a source of single crystals of the superconductor material, said source comprising single crystals of said superconductor material;
b) preparing a single crystal substrate; and
c) depositing the single sheet of superconductor material from the source by vacuum deposition to the substrate, wherein the crystals of superconductor material are deposited at a temperature of about 120K.

Assignees

• Hla Saw Wai
• Hassanien Abdelrahim
• Clark Kendal
• Univ Ohio

Inventors

• Hla Saw Wai
• Hassanien Abdelrahim
• Clark Kendal

Classifications

• H01L39/24 Primary

  Electricity · mapped topic

• H10N60/01 Primary

  Manufacture or treatment · CPC title