Sub-lithographic patterning of magnetic tunneling junction devices

US9362336B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9362336-B2
Application numberUS-201414483919-A
CountryUS
Kind codeB2
Filing dateSep 11, 2014
Priority dateSep 11, 2014
Publication dateJun 7, 2016
Grant dateJun 7, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method for fabricating a magnetic tunnel junction (MTJ) device includes creating a recess within a second patterning layer, in which a first patterning layer overhangs the recessed second patterning layer. Such a method further includes depositing a film into the recess to create a keyhole pattern within the deposited film. The method further includes transferring the keyhole pattern through a hard mask layer to an MTJ stack. The method also includes depositing a conductive material into the transferred keyhole pattern and on an MTJ stack. The method also includes removing the hard mask layer to create a conductive hard mask pillar.

First claim

Opening claim text (preview).

What is claimed is: 1. A magnetic tunnel junction (MTJ) array, comprising: a plurality of MTJ stacks; a plurality of conductive hard mask pillars, each of the plurality of conductive hard mask pillars electrically coupled to a corresponding one of the plurality of MTJ stacks, each of the plurality of conductive hard mask pillars comprising an interface with the corresponding one of the plurality of MTJ stacks that has a smaller cross section than a cross section of a central region of the corresponding one of the plurality of MTJ stacks, in which a keyhole pattern for the plurality of conductive hard mask pillars is sized based at least in part on an MTJ stack size and each of the plurality of conductive hard mask pillars comprises a sacrificial layer. 2. The MTJ array of claim 1 , in which the plurality of conductive hard mask pillars and the plurality of MTJ stacks have a substantially uniform size. 3. The MTJ array of claim 1 , in which the plurality of MTJ stacks are etched based at least in part on a size of the plurality of conductive hard mask pillars. 4. The MTJ array of claim 1 , in which each of the plurality of conductive hard mask pillars comprises a cone shaped portion. 5. The MTJ array of claim 1 , integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit. 6. A magnetic tunnel junction (MTJ) array, comprising: a plurality of MTJ stacks; means for conducting, the conducting means being electrically coupled to a corresponding one of the plurality of MTJ stacks, in which the conducting means includes an interface with the corresponding one of the plurality of MTJ stacks that has a smaller cross section than a cross section of a central region of the corresponding one of the plurality of MTJ stacks, in which a keyhole pattern for the conducting means is sized based at least in part on an MTJ stack size and the conducting means comprises a sacrificial layer. 7. The MTJ array of claim 6 , in which the conducting means and the plurality of MTJ stacks have a substantially uniform size. 8. The MTJ array of claim 6 , in which the plurality of MTJ stacks are etched based at least in part on conducting means. 9. The MTJ array of claim 6 , in which the conducting means comprises a plurality of conductive hard mask pillars. 10. The MTJ array of claim 9 , in which each of the plurality of conductive hard mask pillars comprises a cone shaped portion. 11. The MTJ array of claim 6 , integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.

Assignees

Inventors

Classifications

  • Electricity · mapped topic

  • Electricity · mapped topic

  • using elements in which the storage effect is based on magnetic spin effect · CPC title

  • H01L27/222Primary

    Electricity · mapped topic

  • Electricity · mapped topic

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What does patent US9362336B2 cover?
A method for fabricating a magnetic tunnel junction (MTJ) device includes creating a recess within a second patterning layer, in which a first patterning layer overhangs the recessed second patterning layer. Such a method further includes depositing a film into the recess to create a keyhole pattern within the deposited film. The method further includes transferring the keyhole pattern through …
Who is the assignee on this patent?
Qualcomm Inc
What technology area does this patent fall under?
Primary CPC classification H01L27/222. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 07 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).