Semiconductor storage device and method for manufacturing the semiconductor storage device

Patent metadata

Field	Value
Publication number	US-9362295-B2
Application number	US-201514615455-A
Country	US
Kind code	B2
Filing date	Feb 6, 2015
Priority date	Sep 16, 2008
Publication date	Jun 7, 2016
Grant date	Jun 7, 2016

Abstract

A semiconductor-storage-device manufacturing method of the present invention is a method for manufacturing a semiconductor storage device provided with a ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode, and the method includes a step of embedding a first metal plug and a second metal plug in an insulating layer; a step of forming a covering layer that covers at least the second metal plug while securing a part that comes into electric contact with the first metal plug; a step of forming a deposit structure by sequentially depositing a material for the lower electrode, a material for the ferroelectric film, and a material for the upper electrode after forming the covering layer; and a step of forming the ferroelectric capacitor by etching and removing other parts except a part of the deposit structure such that the part of the deposit structure remains on the first metal plug.

First claim

The invention claimed is:

1. A semiconductor storage device comprising:
an insulating layer;
a ferroelectric capacitor on the insulating layer, the ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode;
an interlayer insulating film formed on the insulating layer, the interlayer insulating film having an opening at a part thereof at which the ferroelectric capacitor is disposed;
a first metal plug formed in the insulating layer and connected to the lower electrode via the opening of the interlayer insulating film;
a second metal plug embedded in the insulating layer outside the ferroelectric capacitor when viewed planarly; and
a hydrogen barrier film covering the ferroelectric capacitor and the interlayer insulating film, wherein
an upper surface of the interlayer insulating film is in a level that is higher than a level of an upper surface of the first metal plug so that a step is provided between the upper surface of the interlayer insulating film and the upper surface of the first metal plug,
the lower electrode is formed on the upper surface of the interlayer insulating film, the upper surface of the first metal plug and the step, and
the upper surface of the interlayer insulating film and the upper surface of the first metal plug are interlinked via a curved portion of the interlayer insulating film.

2. The semiconductor storage device according to claim 1 , wherein the upper surface of the first metal plug and an upper surface of the second metal plug are flush with each other.

3. The semiconductor storage device according to claim 1 , wherein the hydrogen barrier film includes a SiN film.

4. The semiconductor storage device according to claim 3 , wherein the hydrogen barrier film further includes an Al 2 O 3 film formed under the SiN film.

5. The semiconductor storage device according to claim 3 , wherein the hydrogen barrier film further includes an Al 2 O 3 film formed between the SiN film and the interlayer insulating film.

6. The semiconductor storage device according to claim 1 , wherein the insulating layer is a first insulating layer, and the semiconductor storage device further comprises a second insulating layer made of SiO 2 formed on the hydrogen barrier film.

7. The semiconductor storage device according to claim 1 , further comprising a MOSFET embedded in the insulating layer.

8. The semiconductor storage device according to claim 1 , wherein each of the ferroelectric film, the upper electrode and the lower electrode is composed of a material that is different than that of the hydrogen barrier film.

9. The semiconductor storage device according to claim 1 , wherein the interlayer insulating film, the ferroelectric capacitor and the hydrogen barrier film are stacked in that stated order along a straight line.

10. The semiconductor storage device according to claim 1 , wherein the lower electrode touches each of the upper surface of the interlayer insulating film, the upper surface of the first metal plug and the step.

11. The semiconductor storage device according to claim 1 , wherein a thickness of the lower electrode is 0.05 to 0.2 μm.

12. The semiconductor storage device according to claim 1 , wherein the step includes an inclination connecting the upper surface of the interlayer insulating film with the upper surface of the first metal plug.

13. A semiconductor storage device comprising:
an insulating layer;
a ferroelectric capacitor on the insulating layer, the ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode;
an interlayer insulating film formed on the insulating layer, the interlayer insulating film having an opening at a part thereof at which the ferroelectric capacitor is disposed;
a first metal plug formed in the insulating layer and connected to the lower electrode via the opening of the interlayer insulating film; and
a hydrogen barrier film covering the ferroelectric capacitor and the interlayer insulating film, wherein
an upper surface of the interlayer insulating film is in a level that is higher than a level of an upper surface of the first metal plug so that a step is provided between the upper surface of the interlayer insulating film and the upper surface of the first metal plug,
the lower electrode is formed on the upper surface of the interlayer insulating film, the upper surface of the first metal plug and the step, and
the upper surface of the interlayer insulating film and the upper surface of the first metal plug are interlinked via a curved portion of the interlayer insulating film.

14. The semiconductor storage device according to claim 13 , wherein the lower electrode touches each of the upper surface of the interlayer insulating film, the upper surface of the first metal plug and the step.

15. A semiconductor storage device comprising:
an insulating layer;
a ferroelectric capacitor on the insulating layer, the ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode;
an interlayer insulating film formed on the insulating layer, the interlayer insulating film having an opening at a part thereof at which the ferroelectric capacitor is disposed;
a first metal plug formed in the insulating layer and connected to the lower electrode via the opening of the interlayer insulating film; and
a hydrogen barrier film on the ferroelectric capacitor and the interlayer insulating film, wherein
an upper surface of the interlayer insulating film is disposed in a position higher than a position of an upper surface of the first metal plug,
the lower electrode being formed on the upper surface of the interlayer insulating film, the upper surface of the first metal plug and between the upper surface of the interlayer insulating film and the upper surface of the first metal plug, and
a curved portion of the interlayer insulating film being between the upper surface of the interlayer insulating film and the upper surface of the first metal plug.

16. The semiconductor storage device according to claim 1 , further comprising:
a bit line extending above an active region;
a first plate line and a second plate line extending such that the first and second plate lines intersect with the bit line; and
a first word line and a second word line extending such that the first and second word lines intersect with the bit line; wherein
the bit line intersects with the first plate line, the first word line, the second word line and the second plate line in that stated order.

17. The semiconductor storage device according to claim 1 , further comprising:
a bit line extending above an active region;
a second insulating layer on the interlayer insulating film;
a first plate line and a second plate line extending such that the first and second plate lines intersect with the bit line;
a first via embedded in the second insulating layer and electrically connected to the bit line;
a second via embedded in the second insulating layer and electrically connected to the first plate line; and
a third via embedded in the second insulating layer and electrically connected to the second plate line; wherein
the first via, the second via and the third via are lined up in a straight line in a plan view.

18. The semiconductor storage device according to claim 1 , wherein the lower electrode has an approximately rectangular shape in a plan view.

19. The semiconductor storage device according to claim 1 , wherein the lower electrode has a plurality of sides extending

Assignees

• Rohm Co Ltd

Inventors

• Nakao Yuichi

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title