Preparation method of insulating dielectric for improving energy density
US-2021166833-A1 · Jun 3, 2021 · US
US9362030B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9362030-B2 |
| Application number | US-201414268193-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 2, 2014 |
| Priority date | Aug 8, 2013 |
| Publication date | Jun 7, 2016 |
| Grant date | Jun 7, 2016 |
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A composition for forming a silica-based insulation layer, a silica-based insulation layer, and a method of manufacturing the silica-based insulation layer, the composition including a solvent; and an organosilane-based condensation polymerization product, the organosilane-based condensation polymerization product being prepared from a compound mixture, the compound mixture including compounds represented by the following Chemical Formulae 1 and 2: (R 1 ) 3 SiXSi(R 1 ) 3 [Chemical Formula 1] R 2 e (Si)OR 3 4-e . [Chemical Formula 2]
Opening claim text (preview).
What is claimed is: 1. A composition for forming a silica-based insulation layer, the composition comprising: a solvent; and an organosilane-based condensation polymerization product, the organosilane-based condensation polymerization product being prepared from a compound mixture, the compound mixture including compounds represented by the following Chemical Formulae 1 and 2: (R 1 ) 3 SiXSi(R 1 ) 3 [Chemical Formula 1] wherein, in the above Chemical Formula 1, R 1 is independently hydrogen, a hydroxy group, a substituted or unsubstituted C1 to C20 alkoxy group, a halogen-containing group, a silicon-containing group, or a combination thereof, and X is a porogen-containing linking group, wherein the porogen includes polyethylene oxide (PEO), polypropylene oxide (PPO), or a copolymer of polyethylene oxide and polypropylene oxide, R 2 e (Si)(OR 3 ) 4-e [Chemical Formula 2] wherein, in the above Chemical Formula 2, e is an integer of 0 to 3, R 2 is independently hydrogen, a hydroxy group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C20 aryl group, a vinyl group, or a combination thereof, and R 3 is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C20 aryl group, a vinyl group, or a combination thereof. 2. The composition for forming a silica-based insulation layer as claimed in claim 1 , further comprising a pore-forming agent. 3. The composition for forming a silica-based insulation layer as claimed in claim 1 , further comprising a thermal acid generator. 4. The composition for forming a silica-based insulation layer as claimed in claim 1 , wherein the compound mixture further includes a compound represented by the following Chemical Formula 3: (R 4 ) 3 Si(CH 2 ) m Si(R 4 ) 3 [Chemical Formula 3] wherein, in the above Chemical Formula 3, m is an integer of 1 to 6, and R 4 is hydrogen, a hydroxy group, a substituted or unsubstituted C1 to C20 alkoxy group, a halogen-containing group, a silicon-containing group, or a combination thereof. 5. The composition for forming a silica-based insulation layer as claimed in claim 4 , wherein the organosilane-based condensation polymerization product includes a structural unit represented by the following Chemical Formula 4: wherein, in the above Chemical Formula 4, R 1 to R 4 , X, and M are the same as described with respect to Chemical Formulae 1 to 3, and x, y, and z represent a relative mole ratio of each repeating unit, and satisfy the following relations: 0.05≦x≦0.50, 0.45≦y≦0.90, 0.05≦z≦0.50, and x+y+z=1. 6. The composition for forming a silica-based insulation layer as claimed in claim 1 , wherein the organosilane-based condensation polymerization product has a weight average molecular weight (Mw) of about 3,000 to about 20,000. 7. The composition for forming a silica-based insulation layer as claimed in claim 1 , wherein the organosilane-based condensation polymerization product is included in an amount of about 0.1 to about 50 wt %, based on a total weight of the composition. 8. A method of manufacturing a silica-based insulation layer, the method comprising: coating the composition for forming a silica-based insulation layer as claimed in claim 1 on a substrate; drying the substrate coated with the composition for forming a silica-based insulation layer; and curing the resultant at about 150° C. to about 500° C. under an inert gas atmosphere.
Drying; Impregnating · CPC title
Nitrogen-containing linkages · CPC title
in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms (C09D183/10 takes precedence) · CPC title
Treating the surfaces, e.g. applying coatings · CPC title
silicones · CPC title
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