Electrodeposition system and method incorporating an anode having a back side capacitive element
US-2015376812-A1 · Dec 31, 2015 · US
US9359682B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9359682-B2 |
| Application number | US-201514679098-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 6, 2015 |
| Priority date | Jul 28, 2009 |
| Publication date | Jun 7, 2016 |
| Grant date | Jun 7, 2016 |
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A method for forming a surface layer, the purpose thereof is to form a high erosion resistant film. The method for forming a surface layer includes: arranging a member ( 2 ) in a machining fluid ( 3 ); and forming the surface layer including silicon by spacing a silicon electrode ( 1 ) from the member ( 2 ) at a predetermined distance, and by supplying silicon component from the silicon electrode ( 1 ) to the member side by applying a predetermined voltage and generating electric discharge, and an iron-based metal texture including silicon of 3 to 11 wt % is formed at a thickness of 5 to 10 μm at a portion to be treated by repetitively generating a electric discharge pulse in which a time integration value of a current value of the electric discharge pulse is in a range of 30 A·μs to 80 A·μs.
Opening claim text (preview).
The invention claimed is: 1. A method for forming a surface layer, the method comprising: arranging a member in a machining fluid; spacing a silicon electrode from the member at a predetermined distance; and forming an iron-based metal layer including silicon on a surface of the member by supplying silicon component from the silicon electrode to the member by applying a predetermined voltage and repetitively generating electric discharge, wherein a time integration of a current value of the electric discharge pulse is ranged between 30 A·μs and 80 A·μs, and wherein the iron-based metal layer includes 3 to 11 wt % of silicon and has a thickness of 5 to 10 μm. 2. The method for forming a surface layer according to claim 1 , wherein the silicon electrode has a specific resistance of 0.01 Ωcm or lower.
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