Low temperature deposition apparatus

US9359667B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9359667-B2
Application numberUS-201213602668-A
CountryUS
Kind codeB2
Filing dateSep 4, 2012
Priority dateJan 9, 2012
Publication dateJun 7, 2016
Grant dateJun 7, 2016

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A low temperature deposition device according to the present invention includes: a thermal deposition source unit spraying a deposition beam; a differential pumping unit connected to the thermal deposition source unit and passing the deposition beam; and a cooling gas inlet connected to the differential pumping unit and inserting a cooling gas inside the differential pumping unit to cool the deposition beam. According to the present invention, the inorganic deposition beam of low temperature is deposited on the substrate to form the inorganic metal layer of low temperature so that the damage to the organic layer may be minimized when forming the inorganic metal layer of low temperature on the organic layer.

First claim

Opening claim text (preview).

What is claimed is: 1. A low temperature deposition device, comprising: a thermal deposition source unit for spraying a deposition beam; a differential pumping unit connected to the thermal deposition source unit for passing the deposition beam; wherein the differential pumping unit comprises a first high vacuum unit, a second high vacuum unit, and a low vacuum unit disposed between the first high vacuum unit and the second high vacuum unit; and wherein a first high vacuum pump of the first high vacuum unit is disposed at a same height as a first low vacuum pump of the low vacuum unit, and a second high vacuum pump of the second high vacuum unit is disposed at a same height as a second low vacuum pump of the low vacuum unit; said low temperature deposition device further comprising a cooling gas inlet connected to the low vacuum unit for inserting a cooling gas inside the differential pumping unit so as to cool the deposition beam. 2. The low temperature deposition device of claim 1 , wherein: the first high vacuum unit is connected to the thermal deposition source unit; the low vacuum unit is connected to the first high vacuum unit; and the second high vacuum unit is connected to the low vacuum unit. 3. The low temperature deposition device of claim 2 , further comprising: a first deposition hole formed in a first boundary wall dividing the first high vacuum unit and the low vacuum unit for passing the deposition beam; and a second deposition hole formed in a second boundary wall dividing the low vacuum unit and the second high vacuum unit for passing the deposition beam. 4. The low temperature deposition device of claim 1 , wherein the first high vacuum unit includes a first high vacuum deposition tube directly connected to the thermal deposition source unit for passing the deposition beam, and wherein a first high vacuum pump tube is connected to the first high vacuum deposition tube and to the first high vacuum pump. 5. The low temperature deposition device of claim 4 , wherein the second high vacuum unit includes a second high vacuum deposition tube for passing the deposition beam, and wherein a second high vacuum pump tube is connected to the second high vacuum deposition tube and to the second high vacuum pump. 6. The low temperature deposition device of claim 5 , wherein the low vacuum unit includes a first low vacuum pump tube disposed parallel to the first high vacuum pump tube, a second low vacuum pump tube disposed parallel to the second high vacuum pump tube, and a low vacuum deposition tube connecting the first low vacuum pump tube and the second low vacuum pump tube to each other for passing the deposition beam.

Assignees

Inventors

Classifications

  • on organic substrates · CPC title

  • C23C14/12Primary

    Organic material · CPC title

  • Heating or cooling of the substrates · CPC title

  • Vacuum evaporation · CPC title

  • H10K71/00Primary

    Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9359667B2 cover?
A low temperature deposition device according to the present invention includes: a thermal deposition source unit spraying a deposition beam; a differential pumping unit connected to the thermal deposition source unit and passing the deposition beam; and a cooling gas inlet connected to the differential pumping unit and inserting a cooling gas inside the differential pumping unit to cool the de…
Who is the assignee on this patent?
Han Kyul, Kwon O-Hyun, Shin Dong-Woo, and 3 more
What technology area does this patent fall under?
Primary CPC classification C23C14/12. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jun 07 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).