Photo-detecting pixel, photo-detecting apparatus, and method of driving the photo-detecting apparatus
US-9209210-B2 · Dec 8, 2015 · US
US9357143B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9357143-B2 |
| Application number | US-201313870156-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 25, 2013 |
| Priority date | Jun 13, 2012 |
| Publication date | May 31, 2016 |
| Grant date | May 31, 2016 |
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An image pickup unit includes: a plurality of pixels each including a photoelectric conversion device and a field-effect transistor. Each of the pixels includes a light-blocking layer in a peripheral region of the photoelectric conversion device, and the light-blocking layer is maintained to a predetermined electric potential.
Opening claim text (preview).
What is claimed is: 1. An image pickup section with at least one pixel comprising: (a) a photoelectric conversion device including a first conductivity type semiconductor layer, an intrinsic semiconductor layer, and a second conductivity type semiconductor layer, (b) a peripheral area located outside of the photoelectric conversion device, and (c) a light blocking layer within the peripheral area and surrounding the first conductivity type semiconductor layer in plan view. 2. The image pickup section according to claim 1 , wherein the at least one pixel is connected to a read out control line and a signal line. 3. The image pickup section according to claim 2 , wherein the light blocking layer is not overlaid with the read out control line. 4. The image pickup section according to claim 2 , wherein the light blocking layer is provided in the same layer as the read out control line. 5. The image pickup section according to claim 4 , wherein the light blocking layer and the read out control line are made of the same material. 6. The image pickup section according to claim 1 , wherein the photoelectric conversion device is configured to receive incident light and generate an electric charge corresponding to the incident light. 7. The image pickup section according to claim 1 , wherein a portion of the light blocking layer overlaps a portion of the photoelectric conversion device. 8. The image pickup section according to claim 1 , wherein the light-blocking layer has a predetermined electric potential. 9. The image pickup section according to claim 1 , wherein the light-blocking layer and the first conductivity type semiconductor layer are connected to a predetermined electric potential. 10. The image pickup section according to claim 1 , wherein the light-blocking layer is in-between a gate electrode and a substrate. 11. The image pickup section according to claim 1 , wherein the light-blocking layer is provided in the same layer as a gate electrode. 12. The image pickup section according to claim 1 , wherein the first conductivity type semiconductor comprises a low temperature poly-silicon. 13. The image pickup section according to claim 1 , wherein the photoelectric conversion device converts x-ray incident light into electric charges. 14. An image pickup display system comprising: an image pickup unit; an image processing section; and a display unit, wherein, the image pickup unit comprises: (a) an image pickup section, (b) a row scanning section, (c) a column scanning section, and (d) a system control section configured to control the row scanning section and the column scanning section, and wherein the image pickup section comprises: (a) a plurality of pixels arranged in a matrix, (b) for each pixel, a photoelectric conversion device including a first conductivity type semiconductor layer, an intrinsic semiconductor layer, a second conductivity type semiconductor layer, and a peripheral area located outside of the photoelectric conversion device, and (c) for each pixel, a light blocking layer within the peripheral area of the photoelectric conversion device and surrounding the first conductivity type semiconductor layer in plan view.
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