Insulated gate semiconductor element drive device

Patent metadata

Field	Value
Publication number	US-9356580-B2
Application number	US-201514637804-A
Country	US
Kind code	B2
Filing date	Mar 4, 2015
Priority date	Nov 1, 2012
Publication date	May 31, 2016
Grant date	May 31, 2016

Abstract

A drive circuit includes a constant current circuit which supplies a constant current to the gate of an IGBT and on-operates the IGBT; a discharge circuit which grounds the gate of the IGBT and off-operates the IGBT; and a switch circuit which operates one of the constant current circuit or discharge circuit in accordance with a control signal and turns on or off the IGBT. In particular, the drive circuit includes a current detection circuit which detects a current flowing through the IGBT when the IGBT is turned on; and a current regulation circuit which feeds the current detected by the current detection circuit back to the constant current circuit and controls an output current of the constant current circuit in accordance with the turn-on characteristics of the IGBT.

First claim

What is claimed is:

1. An insulated gate semiconductor element drive device, including a plurality of drive circuits which drive a plurality of respective insulated gate semiconductor elements connected in parallel, which drives each of the drive circuits in accordance with a control signal and drives the plurality of insulated gate semiconductor elements in parallel, each of the drives circuits comprising:
a constant current circuit which supplies a constant current to the gate of the insulated gate semiconductor element and on-operates the insulated gate semiconductor element;
a discharge circuit which grounds the gate of the insulated gate semiconductor element and off-operates the insulated gate semiconductor element;
a switch circuit which operates one of the constant current circuit or discharge circuit in accordance with a control signal and turns on or off the insulated gate semiconductor element;
a current detection circuit which detects a current flowing through the insulated gate semiconductor element when the insulated gate semiconductor element is turned on; and
a current regulation circuit which feeds the current detected by the current detection circuit back to the constant current circuit and controls an output current of the constant current circuit.

2. The insulated gate semiconductor element drive device according to claim 1 , wherein the insulated gate semiconductor element is an IGBT or a MOS-FET.

3. The insulated gate semiconductor element drive device according to claim 1 , wherein the current regulation circuit is formed of an error amplifier which obtains a voltage difference between a preset reference voltage and an output voltage of the current detection circuit and determines the output current of the constant current circuit in accordance with the voltage difference.

4. The insulated gate semiconductor element drive device according to claim 1 , wherein the current regulation circuit is formed of a comparator which compares a preset reference voltage and an output voltage of the current detection circuit and causes the output current of the constant current circuit to vary in multiple stages in accordance with a result of the comparison.

5. The insulated gate semiconductor element drive device according to claim 1 , wherein the constant current circuit is formed of a current mirror circuit, interposed between the gate of the insulated gate semiconductor element and a power supply voltage, and a constant current source which supplies a current to the insulated gate semiconductor element via the current mirror circuit.

Assignees

• Fuji Electric Co Ltd

Inventors

• Mori Takahiro

Classifications

• H03K17/127

  in composite switches · CPC title

• H03K17/60

  the devices being bipolar transistors (bipolar transistors having four or more electrodes H03K17/72) · CPC title

• H03K3/012 Primary

  Modifications of generator to improve response time or to decrease power consumption · CPC title

• H02M1/088 Primary

  for the simultaneous control of series or parallel connected semiconductor devices · CPC title