Light-emitting device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9356255-B2
Application number	US-201213454248-A
Country	US
Kind code	B2
Filing date	Apr 24, 2012
Priority date	Apr 27, 2011
Publication date	May 31, 2016
Grant date	May 31, 2016

Abstract

When a hollow structure in which a light-emitting element is provided between a pair of substrates is used in order to prevent oxygen or moisture from reaching the light-emitting element, light leakage to an adjacent pixel easily occurs as compared to a structure in which a space between a pair of substrates is filled with a resin such as an adhesive. In order to reduce light leakage to an adjacent pixel in the hollow structure, a light-blocking spacer is formed over a partition to keep the distance between the pair of substrates uniform. The cross-sectional shape of the light-blocking spacer is a trapezoid having a lower side shorter than an upper side.

First claim

What is claimed is:

1. A light-emitting device comprising:
a first substrate;
a transistor over a first surface of the first substrate;
an insulating film over the transistor;
a first electrode on the insulating film, the first electrode electrically connected to the transistor;
a light-emitting layer over the first electrode;
a second electrode over the light-emitting layer;
a partition on the insulating film, the partition covering a periphery of the first electrode;
a light-blocking spacer on the partition, the light-blocking spacer being covered with the light-emitting layer and the second electrode;
a second substrate fixed to the first substrate; and
first and second black matrixes with a coloring layer positioned therebetween which are in contact with the second substrate,
wherein a cross-sectional shape of the light-blocking spacer is a trapezoid having a lower side shorter than an upper side,
wherein the first black matrix covers the light-blocking spacer with the second electrode positioned therebetween,
wherein the second black matrix overlaps with the transistor and is apart from the second electrode, and
wherein the coloring layer overlaps with the first electrode.

2. The light-emitting device according to claim 1 , wherein a space between the first substrate and the second substrate is a reduced-pressure space.

3. The light-emitting device according to claim 1 , wherein a space between the first substrate and the second substrate is filled with an inert gas.

4. The light-emitting device according to claim 1 , wherein the first black matrix is in contact with the second electrode.

5. The light-emitting device according to claim 1 ,
wherein the first and second black matrixes and the coloring layer are covered with a protective layer comprising an inorganic material, and
wherein the protective layer is in contact with the second electrode.

6. The light-emitting device according to claim 1 , wherein the light-blocking spacer comprises a black resin.

7. The light-emitting device according to claim 1 , wherein a side surface of the light-blocking spacer forms an angle of greater than 90° with the first surface of the first substrate.

8. The light-emitting device according to claim 1 , wherein a first part of the light-emitting layer, which is formed on a side surface of the light-blocking spacer, is thinner than a second part of the light-emitting layer in a region overlapping with the first electrode.

9. The light-emitting device according to claim 1 , wherein a shape of a top surface of the light-blocking spacer is a linear shape.

10. The light-emitting device according to claim 1 , wherein a shape of a top surface of the light-blocking spacer is a net-like shape.

11. A light-emitting device comprising:
a first substrate;
an insulating film over a first surface of the first substrate;
a light-emitting element comprising a first electrode on the insulating film, a light-emitting layer, and a second electrode;
a partition over the insulating film, the partition covering a periphery of the first electrode;
a spacer having light-blocking property over the partition, the spacer being covered with the light-emitting layer and the second electrode;
a second substrate fixed to the first substrate; and
a first black matrix and a coloring layer on a first surface of the second substrate,
wherein a cross-sectional shape of the spacer is a trapezoid having a lower side shorter than an upper side,
wherein a first part of the light-emitting layer, which is formed on a side surface of the spacer, is thinner than a second part of the light-emitting layer in a region overlapping with the first electrode,
wherein the first black matrix overlaps with the spacer, and
wherein the coloring layer overlaps with the light-emitting element.

12. The light-emitting device according to claim 11 , further comprising a transistor electrically connected to the light-emitting element over the first surface of the first substrate.

13. The light-emitting device according to claim 11 , wherein a space between the first substrate and the second substrate is a reduced-pressure space.

14. The light-emitting device according to claim 11 , wherein a space between the first substrate and the second substrate is filled with an inert gas.

15. The light-emitting device according to claim 11 , wherein the first black matrix is in contact with the second electrode.

16. The light-emitting device according to claim 11 ,
wherein the first black matrix and the coloring layer are covered with a protective layer comprising an inorganic material over the first surface of the second substrate, and
wherein the protective layer is in contact with the second electrode.

17. The light-emitting device according to claim 11 , wherein the spacer comprises a black resin.

18. The light-emitting device according to claim 11 , wherein the side surface of the spacer forms an angle of greater than 90° with the first surface of the first substrate.

19. The light-emitting device according to claim 12 , further comprising a second black matrix on the first surface of the second substrate, the second black matrix being apart from the second electrode and overlapping with the transistor.

20. The light-emitting device according to claim 11 , wherein a shape of a top surface of the spacer is a linear shape.

21. The light-emitting device according to claim 11 , wherein a shape of a top surface of the spacer is a net-like shape.

22. A light-emitting device comprising:
a first substrate;
a transistor over a first surface of the first substrate;
an insulating film over the transistor;
a first electrode on the insulating film, the first electrode electrically connected to the transistor;
a light-emitting layer over the first electrode;
a second electrode over the light-emitting layer;
a partition on the insulating film, the partition covering a periphery of the first electrode;
a light-blocking spacer over the partition, the light-blocking spacer being covered with the light-emitting layer and the second electrode; and
a second substrate fixed to the first substrate,
wherein a cross-sectional shape of the light-blocking spacer is a trapezoid having a lower side shorter than an upper side, and
wherein a first part of the light-emitting layer, which is formed on a side surface of the light-blocking spacer, is thinner than a second part of the light-emitting layer in a region overlapping with the first electrode.

23. The light-emitting device according to claim 22 , wherein a space between the first substrate and the second substrate is a reduced-pressure space.

24. The light-emitting device according to claim 22 , wherein a space between the first substrate and the second substrate is filled with an inert gas.

25. The light-emitting device according to claim 22 , further comprising:
a first black matrix over the light-blocking spacer, the first black matrix being in contact with the second electrode; and
a second black matrix over the transistor, the second black matrix being apart from the second electrode.

26. The light-emitting device according to claim 22 , wherein the light-blocking spacer comprises a black resin.

27. The light-emitting device according to claim 22 , wherein the side surface of the light-blocking spacer forms an angle of greater than 90° with the first surface o

Assignees

• Hatano Kaoru
• Semiconductor Energy Lab

Inventors

• Hatano Kaoru

Classifications

• H10K59/8792 Primary

  comprising light absorbing layers, e.g. black layers · CPC title

• H10K59/126

  Shielding, e.g. light-blocking means over the TFTs · CPC title

• H10K59/8723 Primary

  Vertical spacers, e.g. arranged between the sealing arrangement and the OLED · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D86/40

  characterised by multiple TFTs · CPC title