Thin-film electro devices based on derivatized poly(benao-isimidazobenzophenanthroline) ladder polymers
US-8951828-B1 · Feb 10, 2015 · US
US9356240B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-9356240-B1 |
| Application number | US-201213667115-A |
| Country | US |
| Kind code | B1 |
| Filing date | Nov 2, 2012 |
| Priority date | Nov 21, 2011 |
| Publication date | May 31, 2016 |
| Grant date | May 31, 2016 |
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A method for making electronic devices based on derivatized ladder polymer (Pz-BBL) including photovoltaic modules and simple thin film transistors in planar and mechanically flexible and stretchable constructs.
Opening claim text (preview).
What is claimed is: 1. A capacitor having a thin film material, comprising: at least two conductive plates having metal or metal oxides, wherein each said metal/metal oxide plates are spaced apart in that they do not prematurely discharge, wherein one said plate is positively charged and one said plate is negatively charged, wherein said plates are a donor cathode and an acceptor anode in the form of a thin film, wherein said acceptor anode is Pz-BBL; and at least one separator having a dielectric insulator, wherein said separator is associated between each said conductive plates forming a thin film. 2. The capacitor according to claim 1 , wherein said donor cathode is selected from the group consisting of polyProDOT and MEH-PPV. 3. The capacitor according to claim 1 , wherein said donor cathode includes P3HT. 4. The capacitor according to claim 1 , wherein said separator includes a material that permits electrons to pass through. 5. A thin film, comprising: at least one organic layer, wherein at least one said organic layer is Pz-BBL; and at least two metal contacts, wherein said organic layer being Pz-BBL is associated between each said metal contact.
Electricity · mapped topic
Electricity · mapped topic
Selection of materials · CPC title
Electricity · mapped topic
Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)} · CPC title
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