Magnetic tunneling junction devices, memories, memory systems, and electronic devices

Patent metadata

Field	Value
Publication number	US-9356228-B2
Application number	US-201514618534-A
Country	US
Kind code	B2
Filing date	Feb 10, 2015
Priority date	Aug 10, 2011
Publication date	May 31, 2016
Grant date	May 31, 2016

Abstract

Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.

First claim

What is claimed is:

1. A magnetic tunneling junction device comprising:
a first structure including a magnetic layer;
a second structure including:
a first extrinsic perpendicular magnetization layer;
a second extrinsic perpendicular magnetization layer;
a first non-magnetic layer on the first extrinsic perpendicular magnetization layer; and
a second non-magnetic layer on the second extrinsic perpendicular magnetization layer,
wherein the first structure is thicker than the second structure.

2. The device of claim 1 , wherein at least one of the first and second non-magnetic layers comprise at least one of Ta, Ti, U, Ba, Zr, Al, Sr, Hf, La, Ce, Sm, Mg, Th, Ca, Sc, or Y.

3. The device of claim 1 , further comprising a third non-magnetic layer on the second non-magnetic layer.

4. The device of claim 3 , wherein the third non magnetic layer comprises at least one of Ru, Rh, Pd, Ag, Os, Ir, Pt, or Au.

5. The device of claim 1 , wherein the first and second extrinsic perpendicular magnetization layers comprise CoFeB.

6. The device of claim 1 , wherein the first structure further comprises an exchange coupling layer between two magnetization layers.

7. The device of claim 1 , further comprising a tunnel harrier layer between the first structure and the second structure.

8. The device of claim 1 , wherein the first structure further comprises at least two extrinsic perpendicular magnetization layers.

9. The device of claim 8 , wherein the first structure further comprises a non-magnetic layer on the each extrinsic perpendicular magnetization layer.

10. The device of claim 8 , wherein the each extrinsic perpendicular magnetization layer comprises CoFeB.

11. A magnetic tunneling junction device comprising:
a first structure including a magnetic layer;
a second structure including:
a first extrinsic perpendicular magnetization layer;
a second extrinsic perpendicular magnetization layer;
a first non-magnetic layer on the first extrinsic perpendicular magnetization layer; and
a second non-magnetic layer on the second extrinsic perpendicular magnetization layer,
wherein the number of multi layers included in the first structure is more than the number of multi layers included in the second structure.

12. The device of claim 11 , wherein at least one of the first and second non-magnetic layers comprise at least one of Ta, Ti, U, Ba, Zr, Al, Sr, Hf, La, Ce, Sm, Mg, Th, Ca, Sc, or Y.

13. The device of claim 11 , further comprising a third non-magnetic layer on the second non-magnetic layer.

14. The device of claim 13 , wherein the third non-magnetic layer comprises at least one of Ru, Rh, Pd, Ag, Os, Ir, Pt, or Au.

15. The device of claim 11 , wherein the first and second extrinsic perpendicular magnetization layers comprise CoFeB.

Assignees

• Park Jeong Heon
• Lim Woo Chang
• Oh Se Chung
• Kim Young Hyun
• Park Sang Hwan
• Lee Jang Eun
• Samsung Electronics Co Ltd

Inventors

• Park Jeong Heon
• Lim Woo Chang
• Oh Se Chung
• Kim Young Hyun
• Park Sang Hwan
• Lee Jang Eun

Classifications

• G06F13/16

  for access to memory bus (G06F13/28 takes precedence) · CPC title

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H10N50/85

  Materials of the active region · CPC title

• H01L43/02

  Electricity · mapped topic

• H01L43/10

  Electricity · mapped topic