Light emitting device

Patent metadata

Field	Value
Publication number	US-9356206-B2
Application number	US-201414516085-A
Country	US
Kind code	B2
Filing date	Oct 16, 2014
Priority date	Oct 16, 2013
Publication date	May 31, 2016
Grant date	May 31, 2016

Abstract

A light emitting device includes a semiconductor light emitting element that is disposed on a surface of a board, a transparent phosphor plate that includes phosphors, a transparent bonding member that fixedly bonds an upper surface of the semiconductor light emitting element to a lower surface of the phosphor plate, and a reflective layer that surrounds the semiconductor light emitting element and the phosphor plate and contains light-reflective fine particles. The semiconductor light emitting element includes an exposed portion that is provided near an outer peripheral edge of the upper surface of the semiconductor light emitting element and is not covered by the phosphor plate but exposed. A portion of an outer peripheral end surface of the phosphor plate, which is located near the upper surface of the phosphor plate, is not covered by the bonding member.

First claim

What is claimed is:

1. A light emitting device comprising:
a semiconductor light emitting element that is disposed on a surface of a board;
a transparent phosphor plate that includes phosphors;
a transparent bonding member that fixedly bonds an upper surface of the semiconductor light emitting element to a lower surface of the phosphor plate; and
a reflective layer that surrounds the semiconductor light emitting element and the phosphor plate and contains light-reflective fine particles,
wherein the semiconductor light emitting element includes an exposed portion that is provided near an outer peripheral edge of the upper surface of the semiconductor light emitting element and is not covered by the phosphor plate but exposed,
wherein a portion of an outer peripheral end surface of the phosphor plate, which is located near the upper surface of the phosphor plate, is not covered by the bonding member,
wherein the exposed portion is covered by the reflective layer via the bonding member,
wherein the phosphor plate includes an inclination portion that is formed at the outer peripheral end surface of the phosphor plate, the inclination portion being connected to the lower surface of the phosphor plate at an obtuse angle and inclined in such a way that the area of the lower surface of the phosphor plate becomes smaller, and
wherein the bonding member includes a portion sandwiched between the upper surface of the semiconductor light emitting element and the lower surface of the phosphor plate, and a portion covering the exposed portion and the inclination portion.

2. The light emitting device according to claim 1 , wherein the inclination portion is formed only at the portion of the outer peripheral end surface of the phosphor plate, which is located near the lower surface of the phosphor plate.

3. The light emitting device according to claim 1 , wherein an undercut portion is formed at the outer peripheral end surface of the phosphor plate and has a shape that is obtained by cutting out a lower side of the phosphor plate, and
the bonding member includes a portion sandwiched between the upper surface of the semiconductor light emitting element and the lower surface of the phosphor plate, and a portion covering the exposed portion and the undercut portion.

4. The light emitting device according to claim 3 , wherein the undercut portion is formed only at the portion of the outer peripheral end surface of the phosphor plate, which is located near the lower surface of the phosphor plate.

5. The light emitting device according to claim 1 , wherein an uppercut portion is formed at the outer peripheral end surface of the phosphor plate and has a shape that is obtained by cutting out an upper side of the phosphor plate, and
the bonding member includes a portion sandwiched between the upper surface of the semiconductor light emitting element and the lower surface of the phosphor plate, and a portion covering only the exposed portion and a lower side of the uppercut portion.

6. The light emitting device according to claim 5 , wherein the uppercut portion is formed only at the portion of the outer peripheral end surface of the phosphor plate, which is located near the upper surface of the phosphor plate.

7. The light emitting device according to claim 1 , wherein a plurality of semiconductor light emitting elements is arranged with gaps therebetween, and
the phosphor plate is separately provided for each of the plurality of the semiconductor light emitting elements.

8. The light emitting device according to claim 1 , wherein a plurality of semiconductor light emitting elements is arranged with gaps therebetween,
only one phosphor plate is provided for the plurality of the semiconductor light emitting elements,
a recessed portion is formed at the lower surface of the phosphor plate and disposed so as to cover the gaps, and
the bonding member includes a portion sandwiched between the upper surfaces of the semiconductor light emitting elements and the lower surface of the phosphor plate, and a portion covering the exposed portion and a portion of the recessed portion.

9. The light emitting device according to claim 1 , wherein a width of a top portion of the phosphor plate is less than a width of the semiconductor light emitting element.

10. The light emitting device according to claim 1 , wherein the phosphor plate further includes a vertical portion that is vertically connected to the upper surface of the phosphor plate and connected to a point of the inclination portion nearest the upper surface of the phosphor plate.

11. A light emitting device comprising:
a semiconductor light emitting element that is disposed on a surface of a board;
a transparent phosphor plate that includes phosphors;
a transparent bonding member that fixedly bonds an upper surface of the semiconductor light emitting element to a lower surface of the phosphor plate; and
a reflective layer that surrounds the semiconductor light emitting element and the phosphor plate and contains light-reflective fine particles,
wherein the semiconductor light emitting element includes an exposed portion that is provided near an outer peripheral edge of the upper surface of the semiconductor light emitting element and is not covered by the phosphor plate but exposed,
wherein a portion of an outer peripheral end surface of the phosphor plate, which is located near the upper surface of the phosphor plate, is not covered by the bonding member,
wherein the exposed portion is covered by the reflective layer via the bonding member, and
wherein the phosphor plate includes an inclination portion that is formed at the outer peripheral end surface of the phosphor plate, the inclination portion being connected to the lower surface of the phosphor plate at an obtuse angle and inclined in such a way that the area of the lower surface of the phosphor plate becomes smaller.

12. The light emitting device according to claim 11 , wherein the phosphor plate further includes a vertical portion that is vertically connected to the upper surface of the phosphor plate and connected to a point of the inclination portion nearest the upper surface of the phosphor plate.

13. The light emitting device according to claim 11 , wherein the inclination portion is formed only at the portion of the outer peripheral end surface of the phosphor plate, which is located near the lower surface of the phosphor plate.

Assignees

• Toyoda Gosei Kk

Inventors

• Wada Satoshi

Classifications

• H10W90/00

  Package configurations · CPC title

• H10H20/856

  Reflecting means · CPC title

• H10H20/854

  characterised by their material, e.g. epoxy or silicone resins · CPC title

• H10H20/0361

  of wavelength conversion means · CPC title

• H10H20/8514 Primary

  characterised by their shape, e.g. plate or foil · CPC title