Capacitively coupled electrodeless plasma apparatus and a method using capacitively coupled electrodeless plasma for processing a silicon substrate
US-2015372167-A1 · Dec 24, 2015 · US
Optoelectronic device with enhanced efficiency and method of use
US9356183B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-9356183-B1 |
| Application number | US-201213528721-A |
| Country | US |
| Kind code | B1 |
| Filing date | Jun 20, 2012 |
| Priority date | Jun 20, 2011 |
| Publication date | May 31, 2016 |
| Grant date | May 31, 2016 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A compound III/V optoelectronic device and method associated with such a device is disclosed. In one aspect, a method for an improved III/V compound optoelectronic device is disclosed. The method comprises applying a sulfur surfactant on the III/V compound optoelectronic device to improve passivation of the III/V compound optoelectronic device. In a second aspect, a III/V compound optoelectronic device is disclosed. The III/V compound optoelectronic device comprises a thin film device with a III/V compound semiconductor absorbing material, and a sulfur surfactant on the III/V compound thin film device to improve passivation of the III/V compound optoelectronic device.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for an improved III/V optoelectronic device comprising: applying a sulfur surfactant to exposed edges of the III/V optoelectronic device to improve passivation of the III/V optoelectronic device; wherein the exposed edges are created by cracks in, or intentional fracturing of, the III/V optoelectronic device. 2. The method of claim 1 wherein the sulfur surfactant comprises an inert, transparent and insulating viscous liquid with sulfur in a −2 oxidation state. 3. The method of claim 1 , wherein the sulfur surfactant is applied to the front and/or rear surfaces of the III/V optoelectronic device. 4. The method of claim 1 , wherein the cracks are formed after the surfactant is applied. 5. The method of claim 1 , wherein the surfactant is trioctylphosphine sulfide (TOP:S), SP(C 8 H 17 ) 3 .
Assignees
Inventors
Classifications
Coatings (arrangements for preventing damage to photovoltaic cells caused by corpuscular radiation H10F77/80) · CPC title
for photovoltaic cells · CPC title
Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title
comprising thin-film photovoltaic cells · CPC title
comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9356183B1 cover?
- A compound III/V optoelectronic device and method associated with such a device is disclosed. In one aspect, a method for an improved III/V compound optoelectronic device is disclosed. The method comprises applying a sulfur surfactant on the III/V compound optoelectronic device to improve passivation of the III/V compound optoelectronic device. In a second aspect, a III/V compound optoelectroni…
- Who is the assignee on this patent?
- Sheldon Matthew, Eisler Carissa N, Atwater Harry A, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10F71/129. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 31 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).