Structure and method for forming CMOS with NFET and PFET having different channel materials

Patent metadata

Field	Value
Publication number	US-9356046-B2
Application number	US-201314088025-A
Country	US
Kind code	B2
Filing date	Nov 22, 2013
Priority date	Nov 22, 2013
Publication date	May 31, 2016
Grant date	May 31, 2016

Abstract

Embodiments of the present invention provide an improved structure and method for forming CMOS field effect transistors. In embodiments, silicon germanium (SiGe) is formed on a PFET side of a semiconductor structure, while silicon is disposed on an NFET side of a semiconductor structure. A narrow isolation region is formed between the PFET and NFET. The NFET fins are comprised of silicon and the PFET fins are comprised of silicon germanium.

First claim

What is claimed is:

1. A method of forming a semiconductor structure, comprising:
forming a recess on a PFET side of a silicon-on-insulator (SOI) layer disposed on a buried oxide (BOX) layer, wherein the BOX layer is disposed on a semiconductor substrate, and wherein the recess extends partially into the SOI layer, thereby forming a recessed portion of the SOI layer on the PFET side of the SOI layer, and a non-recessed portion on an NFET side of the SOI layer;
forming a gap in the semiconductor structure, wherein the NFET side is separated from the PFET side by the gap, and wherein the gap extends to, and terminates at a top level of the buried oxide layer;
growing an epitaxial silicon germanium (SiGe) layer on the recessed portion of the SOI layer;
converting the SOI layer on the PFET side to SiGe; and
forming a plurality of fins in the SOI layer on the NFET side and forming a plurality of fins in the SiGe layer on the PFET side; and
further comprising depositing an insulator into the gap, wherein the forming a plurality of fins is performed subsequent to the depositing an insulator in the gap.

2. The method of claim 1 , further comprising converting the silicon layer on the PFET side of the semiconductor structure to silicon germanium using an anneal process.

3. The method of claim 1 , further comprising converting the silicon layer on the PFET side of the semiconductor structure to silicon germanium using a thermal oxidation process.

4. The method of claim 1 , wherein forming a gap in the semiconductor structure comprises:
depositing a hybrid resist layer on the semiconductor structure;
patterning the resist to form a gap in the hybrid resist layer;
performing an etch to form a cavity in the semiconductor structure disposed underneath the gap in the hybrid resist layer, wherein the cavity extends to the BOX layer.

5. The method of claim 4 , further comprising recessing the SiGe layer to a level even with the NFET side of the SOI layer.

6. The method of claim 4 , further comprising recessing the SiGe layer to a level that is about 10 nanometers to about 20 nanometers above the NFET side of the SOI layer.

7. The method of claim 1 , wherein depositing an insulator into the gap comprises depositing a flowable oxide.

8. The method of claim 1 , wherein the forming a plurality of fins is performed subsequent to the forming a gap.

9. The method of claim 1 , wherein the method is performed so that the insulator remains subsequent to the forming a plurality of fins.

10. The method of claim 1 , wherein the forming a gap is performed subsequent to the growing an epitaxial silicon germanium layer.

Assignees

• Globalfoundries Inc

Inventors

• Cheng Kangguo
• Doris Bruce B
• Holmes Steven J
• Khakifirooz Ali

Classifications

• H10D84/8311

  the IGFETs characterised by having different channel structures · CPC title

• H10D84/853

  comprising FinFETs · CPC title

• H10D86/011

  comprising FinFETs · CPC title

• H10D84/0193

  the components including FinFETs · CPC title

• H10D84/038

  using silicon technology, e.g. SiGe · CPC title