Light emitting device and lighting apparatus including the same

Patent metadata

Field	Value
Publication number	US-9356007-B2
Application number	US-201414499459-A
Country	US
Kind code	B2
Filing date	Sep 29, 2014
Priority date	Oct 10, 2011
Publication date	May 31, 2016
Grant date	May 31, 2016

Abstract

A light emitting device is disclosed. The disclosed light emitting device includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, a second electrode layer disposed beneath the light emitting structure and electrically connected to the second-conductivity-type semiconductor layer, a first electrode layer including a main electrode disposed beneath the second electrode layer, and at least one contact electrode branching from the main electrode and extending through the second electrode layer, the second-conductivity-type semiconductor layer and the active layer, to contact the first-conductivity-type semiconductor layer, and an insulating layer interposed between the first electrode layer and the second electrode layer and between the first electrode layer and the light emitting structure. The first-conductivity-type semiconductor layer includes a first region and a second region having a smaller height than the first region, and the first region overlaps with the contact electrode.

First claim

What is claimed is:

1. A light emitting device comprising:
a light emitting structure comprising a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer;
a second electrode layer disposed beneath the light emitting structure and electrically connected to the second-conductivity-type semiconductor layer;
a first electrode layer comprising a main electrode disposed beneath the second electrode layer, and at least one contact electrode branching from the main electrode and extending through the second electrode layer, the second-conductivity-type semiconductor layer and the active layer, to contact the first-conductivity-type semiconductor layer; and
an insulating layer interposed between the first electrode layer and the second electrode layer and between the first electrode layer and the light emitting structure,
wherein the first-conductivity-type semiconductor layer comprises a first region and a second region, the first region directly contacts the contact electrode, and a width of the first region is greater than a width of the contact electrode, and
wherein a thickness of the first region in a vertical direction is greater than a thickness of the second region in a vertical direction.

2. The light emitting device according to claim 1 , wherein the width of the first region corresponds to 1 to 5 times the width of the contact electrode.

3. The light emitting device according to claim 1 , wherein a roughness or a pattern is formed at an upper surface of the first-conductivity-type semiconductor layer.

4. light emitting device according to claim 1 , further comprising:
a passivation layer formed on side surfaces of the light emitting structure, to cover at least a portion of the second-conductivity-type semiconductor layer, at least a portion of the active layer, and at least a portion of the first-conductivity-type semiconductor layer.

5. The light emitting device according to claim 4 , wherein the passivation layer is further formed on side surfaces of the first region.

6. The light emitting device according to claim 1 , wherein a roughness is formed at least a portion of a top surface of the contact electrode.

7. The light emitting device according to claim 1 , wherein a portion of the second electrode layer is exposed outside the light emitting structure, and an electrode pad is disposed on the exposed portion of the second electrode layer.

8. The light emitting device according to claim 7 , wherein the second electrode layer comprises a current spreading layer, and the electrode pad contacts the current spreading layer.

9. The light emitting device according to claim 1 , wherein the second electrode layer comprises at least one of an ohmic layer or a reflective layer.

10. The light emitting device according to claim 1 , wherein the first region has at least one of a stripe shape, a circular prism shape, a conical shape, a pyramid shape, a square prism shape, or a hemi-spherical shape.

11. The light emitting device according to claim 1 , wherein a width of the second region is higher than the width of the contact electrode.

12. The light emitting device according to claim 1 , wherein a top surface of the first region is higher than a top surface of the second region.

13. The light emitting device according to claim 1 , wherein a top surface of the first region is higher than a top surface of the contact electrode.

14. The light emitting device according to claim 1 , wherein a top surface of the second region is higher than a top surface of the contact electrode.

15. A light emitting device comprising:
a light emitting structure comprising a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer;
a second electrode layer disposed beneath the light emitting structure and electrically connected to the second-conductivity-type semiconductor layer;
a first electrode layer comprising a main electrode disposed beneath the second electrode layer, and at least one contact electrode branching from the main electrode and extending through the second electrode layer, the second-conductivity-type semiconductor layer and the active layer, to contact the first-conductivity-type semiconductor layer; and
an insulating layer interposed between the first electrode layer and the second electrode layer and between the first electrode layer and the light emitting structure,
wherein the first-conductivity-type semiconductor layer comprises a first region and a second region, the first region is vertically overlapped with the contact electrode, and a width of the first region is less than a width of the second region, and
wherein the second region is vertically non-overlapped with the contact electrode, wherein a top surface of the first region is higher than a top surface of the second region.

16. The light emitting device according to claim 15 , wherein a width of the contact electrode is smaller than a width of the first region.

17. The light emitting device according to claim 15 , wherein a distance between a top surface of the contact electrode and a top surface of the first region is higher than a distance between the active layer and a top surface of the second region.

18. A lighting apparatus comprising:
a light source for emitting light, the light source comprising a plurality of light emitting device packages mounted on a circuit board;
a housing, in which the light source is mounted;
a heat dissipation unit to dissipate heat generated from the light source; and
a holder for coupling the light source and the heat dissipation unit to the housing,
wherein each of the light emitting device packages comprises a body, first and second lead frames disposed on the body, and a light emitting device disposed on the body and electrically connected to the first and second lead frames,
wherein the light emitting device comprises a light emitting structure comprising a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, which are stacked in a predetermined direction; a second electrode layer disposed beneath the light emitting structure and electrically connected to the second-conductivity-type semiconductor layer;
a first electrode layer comprising a main electrode disposed beneath the second electrode layer, and at least one contact electrode branching from the main electrode and extending through the second electrode layer, the second-conductivity-type semiconductor layer and the active layer, to contact the first-conductivity-type semiconductor layer; and an insulating layer interposed between the first electrode layer and the second electrode layer and between the first electrode layer and the light emitting structure, and
wherein the first-conductivity-type semiconductor layer comprises a first region and a second region, the first region directly contacts the contact electrode, and a width of the first region is higher than a width of the contact electrode.

19. The lighting apparatus according to claim 18 , wherein a roughness is formed at least a portion of a top surface of the contact electrode.

Assignees

• Lg Innotek Co Ltd

Inventors

• Moon Ji Hyung
• Lee Sang Youl
• Jeong Young Kyu

Classifications

• F21K9/23

  Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings · CPC title

• F21Y2115/10

  Light-emitting diodes [LED] · CPC title

• H10W90/00 Primary

  Package configurations · CPC title

• F21V29/83

  the elements having apertures, ducts or channels, e.g. heat radiation holes · CPC title

• H10H20/8506

  Containers · CPC title