Resist composition and method for forming pattern

Patent metadata

Field	Value
Publication number	US-9354517-B2
Application number	US-201314078882-A
Country	US
Kind code	B2
Filing date	Nov 13, 2013
Priority date	Mar 18, 2013
Publication date	May 31, 2016
Grant date	May 31, 2016

Abstract

A resist composition includes: a solvent; and a resin in the solvent, the resin being prepared by the hydrolysis and condensation of an alkoxy group-containing compound that contains an alkoxy group bound to a silicon atom or a germanium atom in the presence of an acid or an alkali, wherein a portion of the resist composition irradiated with an energy radiation is insoluble in a developing solution.

First claim

What is claimed is:

1. A resist composition comprising:
a solvent; and
a resin in the solvent, the resin being prepared by the hydrolysis and condensation of an alkoxy group-containing compound that contains an alkoxy group bound to a silicon atom or a germanium atom in the presence of an acid or an alkali,
wherein the resin is in a form of clusters dispersed in the solvent.

2. The resist composition according to claim 1 ,
wherein the alkoxy group-containing compound is represented by the following formula, and
the resin is prepared by the hydrolysis and condensation of at least one type of the alkoxy group-containing compound,
R 1 4-n M 1 (OR 2 ) n   (1)

where in formula (1), M 1 represents a silicon atom or a germanium atom; n represents an integer of 1 to 4; R 1 represents a hydrogen atom, a fluorine atom, an alkyl group having 1 to 8 carbon atoms, a vinyl group, an alicyclic group, an aryl group, or a derivative of the alkyl group having 1 to 8 carbon atoms, the vinyl group, the alicyclic group, or the aryl group, when n represents 2 or less, R 1 's may be the same or different; and R 2 represents a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, an allyl group, a vinyl group, or an alicyclic group, and when n represents 2 or more, R 2 's may be the same or different.

3. The resist composition according to claim 2 ,
wherein the derivative contains an aryl group.

4. The resist composition according to claim 2 ,
wherein the derivative contains an ester linkage or an ether linkage.

5. The resist composition according to claim 1 ,
wherein the resist composition further comprises a silicone compound as an additive compound, wherein the amount of the additive compound is preferably 0.1 parts by weight to 200 parts by weight with respect to 100 parts by weight of the resin in the resist composition.

6. A method for forming a pattern, comprising:
preparing a resist composition containing
a solvent; and
a resin in the solvent, the resin being prepared by the hydrolysis and condensation of an alkoxy group-containing compound that contains an alkoxy group bound to a silicon atom or a germanium atom in the presence of an acid or an alkali, and a portion of the resist composition irradiated with an energy radiation being insoluble in a developing solution;

arranging the prepared resist composition on a substrate;
partially irradiating the arranged resist composition with the energy radiation; and
removing a portion of the resist composition that is not irradiated with the energy radiation from the substrate using the developing solution,
wherein the resist composition forms voids having an average size of 8 nm or less.

7. The method according to claim 6 ,
wherein the alkoxy group-containing compound is represented by the following formula, and
the resin is prepared by the hydrolysis and condensation of at least one type of the alkoxy group-containing compound,
R 3 4-n M 2 (OR 4 ) n   (2)

where in formula (2), M 2 represents a silicon atom or a germanium atom; n represents an integer of 1 to 4; R 3 represents a hydrogen atom, a fluorine atom, an alkyl group having 1 to 8 carbon atoms, a vinyl group, an alicyclic group, an aryl group, or a derivative of the alkyl group having 1 to 8 carbon atoms, the vinyl group, the alicyclic group, or the aryl group, when n represents 2 or less, R 3 's may be the same or different; and R 4 represents a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, an allyl group, a vinyl group, or an alicyclic group, and when n represents 2 or more, R 4 's may be the same or different.

8. The method according to claim 7 ,
wherein the derivative contains an aryl group.

9. The method according to claim 7 ,
wherein the derivative contains an ester linkage or an ether linkage.

10. The method according to claim 6 ,
wherein the prepared resist composition further comprises a silicone compound as an additive compound, wherein the amount of the additive compound is preferably 0.1 parts by weight to 200 parts by weight with respect to 100 parts by weight of the resin in the resist composition.

Assignees

• Fujitsu Ltd

Inventors

• Kon Junichi
• Nakata Yoshihiro

Classifications

• G03F7/0382

  the macromolecular compound being present in a chemically amplified negative photoresist composition · CPC title

• G03F7/20

  Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

• C07F7/0838

  Compounds with one or more Si-O-Si sequences (compounds with a ring containing only alternating Si and O atoms, i.e. cyclosilanes C07F7/21) · CPC title

• G03F7/0757 Primary

  Macromolecular compounds containing Si-O, Si-C or Si-N bonds (G03F7/0752 takes precedence) · CPC title

• G03F7/0043

  Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof (G03F7/0044 takes precedence) · CPC title