Resist composition

Patent metadata

Field	Value
Publication number	US-9354516-B2
Application number	US-201314436170-A
Country	US
Kind code	B2
Filing date	Oct 16, 2013
Priority date	Oct 17, 2012
Publication date	May 31, 2016
Grant date	May 31, 2016

Abstract

A resist composition of the present invention is a resist composition containing a resist base material and a solvent. The resist base material contains a specific stereoisomer. A content of the specific stereoisomer in the resist base material is 50 to 100% by mass.

First claim

The invention claimed is:

1. A resist composition comprising a resist base material and a solvent,
wherein the resist base material comprises a compound represented by the following formula (1):

wherein R are each independently a hydrogen atom, a substituted or non-substituted heterocyclic group, a halogen atom, a substituted or non-substituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or non-substituted branched aliphatic hydrocarbon group having 3 to 20 carbon atoms, a substituted or non-substituted cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, a substituted or non-substituted aryl group having 6 to 20 carbon atoms, a substituted or non-substituted aralkyl group having 7 to 30 carbon atoms, a substituted or non-substituted alkoxy group having 1 to 20 carbon atoms, a substituted or non-substituted amino group having 0 to 20 carbon atoms, a substituted or non-substituted alkenyl group having 2 to 20 carbon atoms, a substituted or non-substituted acyl group having 1 to 20 carbon atoms, a substituted or non-substituted alkoxycarbonyl group having 2 to 20 carbon atoms, a substituted or non-substituted alkyloyloxy group having 1 to 20 carbon atoms, a substituted or non-substituted aryloyloxy group having 7 to 30 carbon atoms, a substituted or non-substituted alkylsilyl group having 1 to 20 carbon atoms, or a group in which each of the groups is bonded to a bivalent group having one or more groups selected from the group consisting of a substituted or non-substituted alkylene group, a substituted or non-substituted allylene group, and an ether group;
R′ and X are each independently a hydrogen atom, a hydroxyl group, a cyano group, a nitro group, a substituted or non-substituted heterocyclic group, a halogen atom, a substituted or non-substituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or non-substituted branched aliphatic hydrocarbon group having 3 to 20 carbon atoms, a substituted or non-substituted cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, a substituted or non-substituted aryl group having 6 to 20 carbon atoms, a substituted or non-substituted aralkyl group having 7 to 20 carbon atoms, a substituted or non-substituted alkoxy group having 1 to 20 carbon atoms, a substituted or non-substituted amino group having 0 to 20 carbon atoms, a substituted or non-substituted alkenyl group having 2 to 20 carbon atoms, a substituted or non-substituted acyl group having 1 to 20 carbon atoms, a substituted or non-substituted alkoxycarbonyl group having 2 to 20 carbon atoms, a substituted or non-substituted alkyloyloxy group having 1 to 20 carbon atoms, a substituted or non-substituted aryloyloxy group having 7 to 20 carbon atoms, a substituted or non-substituted alkylsilyl group having 1 to 20 carbon atoms, or a group in which each of the groups is bonded to a bivalent group having one or more groups selected from the group consisting of a substituted or non-substituted alkylene group, a substituted or non-substituted allylene group, and an ether group; and
directions of three R′ to a direction of one R′ in a 16-membered plane are cis, cis, and trans directions in order of clockwise rotation,
and a content of the compound represented by the formula (1) in the resist base material is 50 to 100% by mass.

2. The resist composition according to claim 1 , wherein X is a hydrogen atom, a hydroxyl group, or a substituted or non-substituted alkoxy group having 1 to 20 carbon atoms in the formula (1).

3. The resist composition according to claim 1 , wherein, in the formula (1), R′ is a group represented by the following formula (2), and X is the hydrogen atom:

wherein p is an integer of 0 to 4; and
R 12 are each independently a cyano group, a nitro group, a halogen atom, a substituted or non-substituted linear aliphatic hydrocarbon group having 1 to 14 carbon atoms, a substituted or non-substituted branched aliphatic hydrocarbon group having 3 to 14 carbon atoms, a substituted or non-substituted cyclic aliphatic hydrocarbon group having 3 to 14 carbon atoms, or a group represented by the following formula (3):

wherein R 4 are each independently a cyano group, a nitro group, a substituted or non-substituted heterocyclic group, a halogen atom, a substituted or non-substituted linear aliphatic hydrocarbon group having 1 to 14 carbon atoms, a substituted or non-substituted branched aliphatic hydrocarbon group having 3 to 14 carbon atoms, a substituted or non-substituted cyclic aliphatic hydrocarbon group having 3 to 14 carbon atoms, a substituted or non-substituted aryl group having 6 to 14 carbon atoms, a substituted or non-substituted alkoxy group having 1 to 14 carbon atoms, or a substituted or non-substituted alkylsilyl group having 1 to 14 carbon atoms; and q is an integer of 0 to 5.

4. The resist composition according to claim 1 , wherein, in the formula (1), R′ is a group represented by the following formula (4), and R and X are a hydrogen atom:

5. The resist composition according to claim 1 , wherein a content of the solvent is 20 to 99% by mass, and a content of a component other than the solvent is 1 to 80% by mass.

6. The resist composition according to claim 1 , further comprising an acid generating agent (C) which directly or indirectly generates acid upon exposure to any one radiation selected from the group consisting of visible light, ultraviolet, excimer laser, electron beam, extreme ultraviolet (EUV), X-ray, and ion beam.

7. The resist composition according to claim 1 , further comprising an acid crosslinking agent (G).

8. The resist composition according to claim 1 , further comprising an acid diffusion controlling agent (E).

9. The resist composition according to claim 1 , wherein the component other than the solvent comprises the resist base material (A), an acid generating agent (C), an acid crosslinking agent (G), and an acid diffusion controlling agent (E), and
based on a total content of 100 parts by mass of the component other than the solvent, a content of the resist base material (A) is 50.000 to 99.498 parts by mass; a content of the acid generating agent (C) is 0.001 to 49.000 parts by mass; a content of the acid crosslinking agent (G) is 0.500 to 49.000 parts by mass; and a content of the acid diffusion controlling agent (E) is 0.001 to 49.000 parts by mass.

10. The resist composition according to claim 1 , wherein the resist composition can form an amorphous film by spin coating.

11. The resist composition according to claim 10 , wherein a dissolution rate of the amorphous film into a developing solution at 23° C. is 10 angstrom/sec or more.

12. The resist composition according to claim 10 , wherein a dissolution rate of the amorphous film into a developing solution is 5 angstrom/sec or less after exposed to KrF excimer laser, extreme ultraviolet, electron beam, or X-ray, or after heated at 20 to 250° C.

13. A method for producing a resist pattern, comprising the steps of:
coating a substrate with the resist composition according to claim 1 , thereby forming a resist film;
exposing the resist film; and
developing the exposed resist film.

14. A resist base material

Assignees

• Mitsubishi Gas Chemical Co

Inventors

• Takasuka Masaaki
• Echigo Masatoshi
• Okada Yu
• Ochiai Yumi

Classifications

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• G03F7/038

  Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021) · CPC title

• G03F7/004 Primary

  Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title

• C07C2603/92

  with a condensed ring system consisting of at least two mutually uncondensed aromatic ring systems, linked by an annular structure formed by carbon chains on non-adjacent positions of the aromatic system, e.g. cyclophanes · CPC title

• C07C2601/14

  The ring being saturated · CPC title