Pressure sensing and control for semiconductor wafer probing

Patent metadata

Field	Value
Publication number	US-9354252-B2
Application number	US-201414560138-A
Country	US
Kind code	B2
Filing date	Dec 4, 2014
Priority date	Oct 31, 2011
Publication date	May 31, 2016
Grant date	May 31, 2016

Abstract

A wafer probing system includes a probe card assembly having a plurality of individual probe structures configured make contact with a semiconductor wafer mounted on a motor driven wafer chuck, with each probe structure configured with a pressure sensing unit integrated therewith; and a controller configured to drive the probe card assembly with one or more piezoelectric driver units response to feedback from the pressure sensing units of the individual probe structures.

First claim

The invention claimed is:

1. A method of implementing a wafer probing system, the method comprising:
positioning a semiconductor wafer mounted on a motor driven wafer chuck to a preset position to initiate contact between the wafer and a probe card assembly having a plurality of individual probe structures, with each probe structure configured with a pressure sensing unit integrated therewith, the probe card assembly including a plurality of zones spaced apart from one another, each zone including at least one respective probe structure configured to be individually actuated with respect to other probe structures included in other zones included in the plurality of zones so as to control movement of at least one zone with respect to at least one other zone among the plurality of zones; and
upon detection of contact between at least one probe structure and a surface of the wafer via a pressure sensing unit of the at least one probe structure, engaging a plurality of piezoelectric driver units, driving at least one probe structure of a first zone of the probe card assembly independently with respect to at least one probe structure of a second zone of the probe card assembly in response to feedback from the pressure sensing unit, and driving the at least one probe structure of a respective zone based on contact between a surface of wafer and the at least one probe structure of a respective zone so as to perform fine adjustment of the at least one probe structure and ensure contact between the at least one probe structure and a surface of the wafer.

2. The method of claim 1 , further comprising:
following positioning the semiconductor wafer to the preset position, driving the probe card assembly with each of the plurality of piezoelectric driver units until at least one of the probe structures is determined to have made contact with the surface of the wafer, wherein the plurality of piezoelectric driver units comprise zonal piezoelectric driver units, with each zonal piezoelectric driver unit configured to control movement of a zone of the probe card assembly such that individualized actuation of a given one of the piezoelectric driver units will cause precision height adjustment of probe structures associated with the zone; and
performing a fine adjustment by driving specific zonal piezoelectric driver units associated with probe structures that have not contacted the wafer, and continuing the fine adjustment until all probe structures are determined to have contacted the wafer.

3. The method of claim 2 , further comprising performing additional fine adjustment of the probe card assembly with the zonal piezoelectric driver units until each probe structure is determined to be in electrical contact with the wafer surface.

4. The method of claim 1 , further comprising:
following positioning the semiconductor wafer to the preset position, performing precision height adjustment for a first of the plurality of probe structures by driving it with a first of the piezoelectric driver units until the first probe structure is determined to have made contact with the wafer surface, wherein each of the plurality of probe structures has a dedicated piezoelectric driver unit associated therewith; and
performing a fine adjustment of the first probe structure by further driving it with the first piezoelectric driver units until the first probe structure is determined to be in electrical contact with the wafer surface.

5. The method of claim 4 , further comprising:
repeating, for each the remaining plurality of probe structures, driving with a corresponding one of the piezoelectric driver units until each probe structure is determined to have made contact with the wafer surface; and
repeating, for each the remaining plurality of probe structures, performing the fine adjustment until each probe structure is determined to be in electrical contact with the wafer surface.

6. The method of claim 1 , wherein the pressure sensing unit uses an optical detection technique to detect contact between the probe structure and the wafer surface, the optical detection technique including an optical detector array in proximity with the at least one probe structure, the optical detector array configured to receive an optical signal incident thereupon in response to an incident optical beam directed upon the surface of the probe structure.

7. The method of claim 1 , wherein the pressure sensing unit uses an electrical detection technique to detect contact between the probe structure and the wafer surface, the electrical detection technique including a detector circuit and a moveable arm in proximity with the probe structure, the detector circuit configured to detect a change in at least one electrical circuit parameter based on the deflection of the probe structure.

8. The method of claim 1 , wherein the pressure sensing unit uses a mechanical detection technique to detect contact between the probe structure and the wafer surface, the mechanical detection technique including a strain gauge and a moveable arm in proximity with the probe structure to detect a strain torsion associated with contact between the probe structure and the wafer surface.

9. The method of claim 1 , wherein the at least one piezoelectric driver unit is a zonal piezoelectric driver unit.

10. The method of claim 9 , further comprising control movement of a zone of the probe card assembly using the at least one a zonal piezoelectric driver unit such that individualized actuation of a given one of the at least one zone piezoelectric driver unit precisely adjusts a height of the probe structures associated with the zone.

11. The method of claim 10 , further comprising individually actuating a given zonal piezoelectric driver unit will cause precision height adjustment of the at least one probe structure associated therewith.

12. A method of probing a wafer, the method comprising:
contacting a semiconductor wafer mounted on a motor driven wafer chuck using a plurality of individual probe structures, each probe structure configured with a pressure sensing unit integrated therewith, the probe card assembly including a plurality of zones, each zone including at least one respective probe structure;
determining feedback from the pressure sensing units of the individual probe structures; and
driving at least one probe structure of a first zone of the probe card assembly with at least one piezoelectric driver unit independently with respect to at least one probe structure of a second zone of the probe card assembly in response to the feedback, and driving the at least one probe structure of a respective zone based on contact between a surface of wafer and the at least one probe structure of a respective zone.

13. The method of claim 12 , further comprising pivoting a second segment of the at least one probe structure to deflect away from a longitudinal axis of the at least one probe structure in response to contacting a probe tip of the second segment against a surface of the wafer.

14. The method of claim 13 , further comprising detecting contact between the at least one probe structure and the wafer surface based on an optical detection technique.

15. The method of claim 14 , further comprising detecting the contact between the at least one probe structure and the wafer in response to detecting an optical signal that is reflected from a surface of the at least one probe structure.

16. The method of claim 13 , further comprising detecting contact between the at least one probe structure and the wafer surface based on an electrical detection technique to detect contact between t

Assignees

• IBM

Inventors

• Edwards Robert D
• Gluschenkov Oleg
• Medina Louis V
• Ting Tso-Hui
• Wang Ping-Chuan
• Xin Yongchun

Classifications

• G01R31/2891 Primary

  related to sensing or controlling of force, position, temperature (G01R31/2874 takes precedence; sensing of force G01L; sensing of position G01B, G01D; sensing of temperature G01K; controlling in general G05) · CPC title

• G01R1/06794 Primary

  Devices for sensing when probes are in contact, or in position to contact, with measured object · CPC title

• G01R1/07364

  with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch · CPC title