Vertical-cavity surface-emitting laser diode and optical transmission apparatus

Patent metadata

Field	Value
Publication number	US-9350139-B2
Application number	US-201414452053-A
Country	US
Kind code	B2
Filing date	Aug 5, 2014
Priority date	Aug 7, 2013
Publication date	May 24, 2016
Grant date	May 24, 2016

Abstract

A vertical-cavity surface-emitting laser diode includes: a first resonator that has a plurality of semiconductor layers comprising a first current narrowing structure having a first conductive region and a first non-conductor region; a first electrode that supplies electric power to drive the first resonator; a second resonator that has a plurality of semiconductor layers comprising a second current narrowing structure having a second conductive region and a second non-conductive region and that is formed side by side with the first resonator, the second current narrowing structure being formed in same current narrowing layer as the layer where the first current narrowing structure is formed; and a coupling portion as defined herein; and an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.

First claim

What is claimed is:

1. A vertical-cavity surface-emitting laser diode comprising:
a first resonator that has a plurality of semiconductor layers comprising a first current narrowing structure having a first conductive region and a first non-conductive region;
a first electrode that supplies electric power to drive the first resonator;
a second resonator that has a plurality of semiconductor layers comprising a second current narrowing structure having a second conductive region and a second non-conductive region and that is formed side by side with the first resonator, the second current narrowing structure being formed in same current narrowing layer as the layer where the first current narrowing structure is formed;
a coupling portion that couples the plurality of semiconductor layers in the first resonator with the plurality of semiconductor layers in the second resonator respectively; and
a second electrode that drives the second resonator to control a phase of light to be fed back to the first resonator side when the light propagated from the first resonator side to the second resonator side is fed back to the first resonator side, the second electrode being formed on the second resonator, wherein:
an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.

2. The vertical-cavity surface-emitting laser diode according to claim 1 , wherein the second electrode controls the phase of the light so that the light can be fed back to the first resonator side with a reverse phase to the phase with which the light is propagated to the second resonator side.

3. The vertical-cavity surface-emitting laser diode according to claim 1 , wherein a whole of an emission surface of the second resonator is covered with a light-shielding member.

4. The vertical-cavity surface-emitting laser diode according to claim 3 , wherein the light-shielding member is the second electrode.

5. The vertical-cavity surface-emitting laser diode according to claim 1 , wherein a distance between the first resonator and the second resonator and a width of the coupling portion are set at values with which high frequency characteristics can be improved more greatly than the first resonator to which the second resonator is not coupled.

6. The vertical-cavity surface-emitting laser diode according to claim 1 , wherein electric resistance of the coupling portion is higher than electric resistance of each of the first resonator and the second resonator.

7. The vertical-cavity surface-emitting laser diode according to claim 1 , wherein the first resonator, the second resonator and the coupling portion have a multilayer film reflector including a laminate structure of high refractive index layers and low refractive index layers on an emission surface side of an active layer; and the multilayer reflector in the coupling portion is electrically insulated.

8. The vertical-cavity surface-emitting laser diode according to claim 1 , wherein the coupling portion comprises:
a third conductive region that connects the first conductive region and the second conductive region inside the current narrowing layer; and
a third non-conductive region that connects the first non-conductive region and the second non-conductive region inside the current narrowing layer.

9. An optical transmission apparatus comprising:
vertical-cavity surface-emitting laser diode according to claim 1 ; and
an application unit that applies a drive signal to the vertical-cavity surface-emitting laser diode.

10. The vertical-cavity surface-emitting laser diode according to claim 1 , wherein the second electrode drives the second resonator to control the phase of the light so that a frequency at which modulation sensitivity is −3 dB is improved in comparison to a case in which the first resonator is not coupled with the second resonator.

11. The vertical-cavity surface-emitting laser diode according to claim 1 , wherein the first resonator is driven by a first drive signal, and the second resonator is driven by a second drive signal different from the first drive signal during a time when the first resonator is being driven by the first drive signal.

12. The vertical-cavity surface-emitting laser diode according to claim 1 , wherein the first electrode is directly formed on the first resonator and is not formed on the second resonator, and the second electrode is directly formed on the second resonator and is not formed on the first resonator.

13. The vertical-cavity surface-emitting laser diode according to claim 1 , wherein the second electrode is formed on an end portion of the second resonator and is not formed on the coupling portion side of the second resonator.

14. The vertical-cavity surface-emitting laser diode according to claim 1 , wherein the first electrode and the second electrode are formed on opposite ends of the first resonator and the second resonator, respectively, and are not formed on the coupling portion side of the first resonator and the second resonator.

Assignees

• Tokyo Inst Tech
• Fuji Xerox Co Ltd

Inventors

• Koyama Fumio
• Dalir Hamed
• Kondo Takashi
• Jogan Naoki
• Takeda Kazutaka
• Nakayama Hideo

Classifications

• H01S5/3432

  the whole junction comprising only (AI)GaAs · CPC title

• H01S5/1032

  Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region · CPC title

• H01S5/06226

  Modulation at ultra-high frequencies · CPC title

• H01S5/18344

  characterized by the mesa, e.g. dimensions or shape of the mesa · CPC title

• H01S5/18313

  by oxidizing at least one of the DBR layers · CPC title