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STTMRAM element having multiple perpendicular MTJs coupled in series
US9349941B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9349941-B2 |
| Application number | US-201514944117-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 17, 2015 |
| Priority date | Feb 12, 2007 |
| Publication date | May 24, 2016 |
| Grant date | May 24, 2016 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
The present invention is directed to a multi-state current-switching magnetic memory element configured to store a state by current flowing therethrough to switch the state. The magnetic memory element includes a stack of two or more magnetic tunneling junctions (MTJs) with each MTJ including a free layer with a switchable magnetic orientation perpendicular to a layer plane thereof, a barrier layer, and a fixed layer with a fixed magnetic orientation perpendicular to a layer plane thereof. Each MTJ is separated from other MTJs in the stack by at least an isolation layer. The stack of MTJs may store more than one bit of information. The free layer of each MTJ has a switching current threshold different from free layers of other MTJs in the stack.
First claim
Opening claim text (preview).
What is claimed is: 1. A multi-state current-switching magnetic memory element configured to store a state by current flowing therethrough to switch the state comprising: a stack of two or more magnetic tunnel junctions (MTJs), each MTJ including a free layer with a switchable magnetic orientation perpendicular to a layer plane thereof, a barrier layer, and a fixed layer with a fixed magnetic orientation perpendicular to a layer plane thereof, each MTJ being separated from other MTJs in the stack by at least an isolation layer, the stack of MTJs operable to store more than one bit of information, wherein the free layer of each MTJ has a switching current threshold different from free layers of other MTJs in the stack. 2. The magnetic memory element of claim 1 , wherein the free layer of each MTJ has a different composition from free layers of other MTJs in the stack. 3. The magnetic memory element of claim 1 , wherein the free layer of each MTJ has a different oxide content from free layers of other MTJs in the stack. 4. The magnetic memory element of claim 1 , wherein the isolation layer has an amorphous structure. 5. The magnetic memory element of claim 1 , wherein the isolation layer is non-magnetic. 6. The magnetic memory element of claim 1 , wherein each MTJ in the stack stores one bit of information. 7. The magnetic memory element of claim 1 , wherein each MTJ has a different thickness from other MTJs in the stack. 8. The magnetic memory element of claim 1 , wherein each MTJ has a different in-plane dimension compared with other MTJs in the stack. 9. The magnetic memory element of claim 1 , wherein the barrier layer of each MTJ has a different thickness from barrier layers of other MTJs in the stack, thereby providing each MTJ a unique electrical resistance.
Assignees
Inventors
Classifications
- G11C11/161Primary
details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title
- G11C11/5607Primary
using magnetic storage elements · CPC title
Electricity · mapped topic
Electricity · mapped topic
Reading or sensing circuits or methods · CPC title
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Frequently asked questions
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- What does patent US9349941B2 cover?
- The present invention is directed to a multi-state current-switching magnetic memory element configured to store a state by current flowing therethrough to switch the state. The magnetic memory element includes a stack of two or more magnetic tunneling junctions (MTJs) with each MTJ including a free layer with a switchable magnetic orientation perpendicular to a layer plane thereof, a barrier l…
- Who is the assignee on this patent?
- Avalanche Technology Inc
- What technology area does this patent fall under?
- Primary CPC classification G11C11/161. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue May 24 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).