Semiconductor graphene structures, semiconductor devices including such structures, and related methods

Patent metadata

Field	Value
Publication number	US-9349803-B2
Application number	US-201414521088-A
Country	US
Kind code	B2
Filing date	Oct 22, 2014
Priority date	Jul 30, 2013
Publication date	May 24, 2016
Grant date	May 24, 2016

Abstract

A semiconducting graphene structure may include a graphene material and a graphene-lattice matching material over at least a portion of the graphene material, wherein the graphene-lattice matching material has a lattice constant within about ±5% of a multiple of the lattice constant or bond length of the graphene material. The semiconducting graphene structure may have an energy band gap of at least about 0.5 eV. A method of modifying an energy band gap of a graphene material may include forming a graphene-lattice matching material over at least a portion of a graphene material, the graphene-lattice matching material having a lattice constant within about ±5% of a multiple of the lattice constant or bond length of the graphene material.

First claim

What is claimed is:

1. A semiconductor structure, comprising:
a graphene material; and
a graphene-lattice matching material over at least a portion of the graphene material, the graphene-lattice matching material comprising a unit cell vector in alignment with a lattice vector of the graphene material or with a graphene bond of the graphene material,
wherein the semiconductor structure comprises an energy band gap of at least about 0.5 eV.

2. The semiconductor structure of claim 1 , wherein the graphene-lattice matching material comprises a unit cell vector in alignment with a lattice vector of the graphene material, and a magnitude of the unit cell vector of the graphene-lattice matching material is a multiple of the lattice vector of the graphene material.

3. The semiconductor structure of claim 1 , wherein the graphene-lattice matching material comprises a unit cell vector in alignment with a graphene bond of the graphene material, and a magnitude of the unit cell vector of the graphene-lattice matching material is a multiple of the graphene bond of the graphene material.

4. The semiconductor structure of claim 1 , wherein the graphene-lattice matching material comprises a hexagonal material having a lattice constant of from about 4.05 Å to about 4.47 Å.

5. The semiconductor structure of claim 1 , wherein the graphene-lattice matching material comprises hexagonal crystalline magnesium carbonate (MgCO 3 ).

6. The semiconductor structure of claim 5 , wherein the semiconductor structure comprises an energy band gap of about 1.7 eV.

7. The semiconductor structure of claim 1 , further comprising a p-doped polysilicon substrate underlying the graphene material.

8. The semiconductor structure of claim 1 , further comprising a silicon carbide substrate underlying the graphene material.

9. The semiconductor structure of claim 1 , further comprising a substrate underlying the graphene material, the substrate comprising a crystallized Cu (111) material on an oxidized silicon material, the graphene material on the crystallized Cu (111) material.

10. A semiconductor device comprising:
a source;
a drain;
a gate structure; and
a semiconducting graphene structure adjacent to at least one of the source or the drain, the semiconducting graphene structure having an energy band gap of at least about 0.5 eV and comprising:
a graphene material, and
a graphene-lattice matching material over at least a portion of the graphene material, the graphene-lattice matching material comprising a unit cell vector in alignment with a lattice vector of the graphene material or a graphene bond of the graphene material.

11. The semiconductor device of claim 10 , further comprising:
a gate dielectric material overlying the graphene-lattice matching material of the semiconducting graphene structure; and
a gate structure overlying the gate dielectric material.

12. The semiconductor device of claim 10 , further comprising a gate dielectric material, the graphene-lattice matching material being at least a part of the gate dielectric material.

13. The semiconductor device of claim 10 , wherein the semiconducting graphene structure is between the source and the drain.

14. The semiconductor device of claim 10 , wherein the semiconducting graphene structure comprises a hexagonal crystalline material over at least a portion of the graphene material, and the semiconducting graphene structure comprises an energy band gap of about 1.7 eV.

15. The semiconductor device of claim 10 , further comprising an upper gate structure above the semiconducting graphene structure.

16. The semiconductor device of claim 10 , further comprising a lower gate structure below the semiconducting graphene structure.

17. The semiconductor device of claim 10 , wherein the graphene-lattice matching material comprises magnesium carbonate or aluminum borate.

18. The semiconductor device of claim 10 , wherein a thickness of the semiconducting graphene structure is sufficient to prevent leakage or direct tunneling of the semiconductor device.

19. A method of modifying an energy band gap of a graphene material, the method comprising:
forming a graphene-lattice matching material over at least a portion of a graphene material, the graphene-lattice matching material comprising a unit cell vector in alignment with a lattice vector of the graphene material or a graphene bond of the graphene material.

20. The method of claim 19 , wherein forming a graphene-lattice matching material over at least a portion of a graphene material comprises forming the graphene-lattice matching material having the unit cell vector in alignment with the lattice vector of the graphene material, the unit cell vector of the graphene-lattice matching material being within about ±5% of a multiple of the lattice vector of the graphene material.

21. The method of claim 19 , wherein forming a graphene-lattice matching material over at least a portion of a graphene material comprises forming the graphene-lattice matching material having the unit cell vector in alignment with the graphene bond of the graphene material, the unit cell vector of the graphene-lattice matching material being within about ±5% of a multiple of the graphene bond of the graphene material.

22. The method of claim 19 , wherein forming a graphene-lattice matching material over at least a portion of a graphene material comprises applying heat while growing the graphene-lattice matching material on the graphene material.

23. The method of claim 19 , wherein forming a graphene-lattice matching material on at least a portion of a graphene material comprises increasing an energy band gap of the graphene material to at least about 0.5 eV.

24. The method of claim 19 , wherein forming a graphene-lattice matching material on at least a portion of a graphene material comprises forming hexagonal crystalline magnesium carbonate material having a lattice constant from about 4.05 Å to 4.47 Å on at least a portion of the graphene material.

25. The method of claim 19 , wherein forming a graphene-lattice matching material on at least a portion of a graphene material comprises bonding hexagonal magnesium carbonate (MgCO 3 ) on at least a portion of the graphene material to have a bond energy of about 0.8 eV per oxygen atom of the hexagonal magnesium carbonate (MgCO 3 ) in contact with the graphene material.

Assignees

• Micron Technology Inc

Inventors

• Meade Roy E
• Pandey Sumeet C

Classifications

• H10P14/6939

  characterised by the metal · CPC title

• H10P14/3406

  Carbon, e.g. diamond-like carbon · CPC title

• H10P14/38

  characterised by treatments done after the formation of the materials · CPC title

• H10D84/85

  Complementary IGFETs, e.g. CMOS · CPC title

• H10D64/691

  comprising metallic compounds, e.g. metal oxides or metal silicates  (insulators comprising nitrogen H10D64/693) · CPC title